EXC 1056: Center for Advancing Electronics Dresden (cfAED)

EXC 1056：德累斯顿电子推进中心 (cfAED)

• 批准号: 194636624
• 金额: --
• 依托单位: Technische Universität Dresden
• 依托单位国家: 德国
• 项目类别: Clusters of Excellence
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/194636624?language=en
• 关键词: EXC; 1056; Center; Advancing; Electronics

Information processing is currently dominated by complementary metal oxide semiconductor (CMOS) technology. Since the 1960s the advancements in electronics due to scaling of integration densities along Moores law have established a general expectation for very short innovation cycles with ever-new application possibilities. Indeed, the huge advancement of electronics over the past decades has been the driving force for innovation in various application fields and has significantly shaped the world we live in today. As CMOS technology is reaching atomic boundaries, it increasingly fails to deal with the negative impacts on device behaviour due to shrinkage (short channel effects, leakage etc.), and Moores law is projected to end. Thus, it is accepted that long-term innovation in electronics cannot be based solely on higher planar integration densities. Instead, new ways must be found to address current and future challenges of electronic information processing systems: physical size, speed, energy efficiency, new functionality, self-assembly/-organisation, adaptivity, resilience, cost. Currently, there still is room for improvement in CMOS technology and industry roadmaps reach out to 2022. The past decade has seen significant advances in new materials, which have led to many promising discoveries. While material research needs to continue, some discoveries have now reached a point that warrants exploring device fabrication, circuits and information processing systems for potential applications. As CMOS scaling is projected to end soon after 2020, industry will stop being preoccupied with advancing CMOS and will eagerly look out for new ideas. Given these two developments, we believe that university-based research now has a unique opportunity to integrate discoveries on new materials and technological innovations with the potential for advancing electronic information processing beyond 2020. Specifically, it is the vision of the Center for Advancing Electronics Dresden (cfAED) that future CMOS technology will be complemented with new technologies (augmented CMOS), resulting in heterogeneous architectures to form highly efficient information processing environments.

信息处理目前由互补金属氧化物半导体（CMOS）技术主导。自20世纪60年代以来，由于集成密度沿着摩尔定律的缩放，电子学的进步已经建立了对具有不断新的应用可能性的非常短的创新周期的普遍期望。事实上，过去几十年来电子技术的巨大进步一直是各个应用领域创新的驱动力，并极大地塑造了我们今天生活的世界。随着CMOS技术达到原子边界，它越来越无法处理由于收缩（短沟道效应、泄漏等）而对器件行为的负面影响，摩尔定律也将终结因此，人们普遍认为，电子产品的长期创新不能仅仅基于更高的平面集成密度。相反，必须找到新的方法来解决电子信息处理系统当前和未来的挑战：物理尺寸、速度、能源效率、新功能、自组装/组织、适应性、弹性、成本。目前，CMOS技术仍有改进的空间，行业路线图将延伸到2022年。在过去的十年中，新材料取得了重大进展，导致了许多有希望的发现。虽然材料研究需要继续，但一些发现现在已经达到了一个值得探索潜在应用的设备制造，电路和信息处理系统的程度。随着CMOS规模缩小预计将在2020年后很快结束，行业将不再专注于推进CMOS，并将热切地寻找新的想法。鉴于这两个发展，我们认为，以大学为基础的研究现在有一个独特的机会，将新材料和技术创新的发现与2020年以后推进电子信息处理的潜力相结合。具体来说，德累斯顿电子技术发展中心（cfAED）的愿景是，未来的CMOS技术将与新技术（增强型CMOS）相辅相成，从而形成异构架构，形成高效的信息处理环境。

项目成果

From Immune Cells to Self-Organizing Ultra-Dense Small Cell Networks

• DOI: 10.1109/jsac.2016.2544638
• 发表时间: 2016-04-01
• 期刊: IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS
• 影响因子: 16.4
• 作者: Klessig, Henrik;Oehmann, David;Fettweis, Gerhard P.
• 通讯作者: Fettweis, Gerhard P.

ProFeat: feature-oriented engineering for family-based probabilistic model checking

• DOI: 10.1007/s00165-017-0432-4
• 发表时间: 2018-01-01
• 期刊: FORMAL ASPECTS OF COMPUTING
• 影响因子: 1
• 作者: Chrszon, Philipp;Dubslaff, Clemens;Baier, Christel
• 通讯作者: Baier, Christel

Decision making improves sperm chemotaxis in the presence of noise

• DOI: 10.1371/journal.pcbi.1006109
• 发表时间: 2018-04-01
• 期刊: PLOS COMPUTATIONAL BIOLOGY
• 影响因子: 4.3
• 作者: Kromer, Justus A.;Maercker, Steffen;Friedrich, Benjamin M.
• 通讯作者: Friedrich, Benjamin M.

Temporalizing Ontology-Based Data Access

时化基于本体的数据访问

• DOI: 10.1007/978-3-642-38574-2_23
• 发表时间: 2013
• 作者: F. Baader;S. Borgwardt;M. Lippmann
• 通讯作者: M. Lippmann

A heterogeneous SDR MPSoC in 28nmCMOS for low-latency wireless applications

适用于低延迟无线应用的 28nmCMOS 异构 SDR MPSoC

• DOI: 10.1145/3061639.3062188
• 发表时间: 2017
• 期刊: 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)
• 作者: S. Haas;T. Seifert;B. Nöthen;S. Scholze;S. Höppner;A. Dixius;E. Pérez Adeva;T. Augustin;F. Pauls;S. Moriam;M. Hasler;E. Fischer;Y. Chen;E. Matus;G. Ellguth;S. Hartmann;S. Schiefer;L. Cederström;D. Walter;S. Henker;S. Hänzsche;J. Uhlig
• 通讯作者: J. Uhlig