SBIR Phase I: Scalable Bulk GaN Crystal Growth

这个小企业创新研究第一阶段项目将展示经济和可扩展的GaN大块晶体生长技术的可行性，以生产具有均匀低位错密度的非极性和半极性GaN衬底。非极性和半极性GaN衬底将通过一种新的多步骤晶体生长工艺来获得，该工艺可以产生真正的块状GaN单晶。这些衬底将在激光二极管和超高亮度发光二极管(LED)等先进的GaN基器件中得到应用。由此产生的衬底价格下降将加快LED制造商对GaN衬底的采用，并扩大LED在要求苛刻和价格敏感的固态照明应用中的应用。GaN基LED通过取代低效和/或有毒的传统光源，如灯泡和荧光灯，展示了令人兴奋的长期固态照明前景。

This Small Business Innovation Research Phase I project will demonstrate thefeasibility of economical and scalable GaN bulk crystal growth techniques to produce non-polar and semi-polar GaN substrates with a uniformly low dislocation density. The non-polar and semi-polar GaN substrates will be derived from a novel multi-step crystal growth process that yields true bulk GaN single crystals. These substrates will find application in advanced GaN-based devices such as laser diodes and ultra-high brightness light emitting diodes (LEDs).The resulting substrate price reduction will accelerate adoption of GaN substrates by LED manufacturers, and expand LED use in demanding and price sensitive solid-state lighting applications. GaN-based LEDs present exciting long-term prospects for solid-state lighting, via the replacement of inefficient and/or toxic conventional light sources such as light bulbs and fluorescent lamps.