SBIR Phase I: Scalable Bulk GaN Crystal Growth

SBIR 第一阶段：可扩展的块状 GaN 晶体生长

• 批准号: 0946011
• 负责人: Paul Fini
• 金额: $ 15万
• 依托单位: Inlustra Technologies LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0946011&HistoricalAwards=false
• 关键词: SBIR; Phase; Scalable; Bulk; GaN

This Small Business Innovation Research Phase I project will demonstrate thefeasibility of economical and scalable GaN bulk crystal growth techniques to produce non-polar and semi-polar GaN substrates with a uniformly low dislocation density. The non-polar and semi-polar GaN substrates will be derived from a novel multi-step crystal growth process that yields true bulk GaN single crystals. These substrates will find application in advanced GaN-based devices such as laser diodes and ultra-high brightness light emitting diodes (LEDs).The resulting substrate price reduction will accelerate adoption of GaN substrates by LED manufacturers, and expand LED use in demanding and price sensitive solid-state lighting applications. GaN-based LEDs present exciting long-term prospects for solid-state lighting, via the replacement of inefficient and/or toxic conventional light sources such as light bulbs and fluorescent lamps.

这个小型企业创新研究第一阶段项目将证明经济和可扩展的GaN块体晶体生长技术的可行性，以生产具有均匀低位错密度的非极性和半极性GaN衬底。非极性和半极性GaN衬底将来自一种新的多步晶体生长工艺，该工艺可产生真正的块状GaN单晶。这些衬底将应用于先进的GaN基器件，如激光二极管和超高亮度发光二极管（LED）。由此带来的衬底价格下降将加速LED制造商采用GaN衬底，并扩大LED在要求苛刻和价格敏感的固态照明应用中的应用。GaN基LED通过取代诸如灯泡和荧光灯等低效和/或有毒的传统光源，为固态照明呈现了令人兴奋的长期前景。