SBIR Phase II: Scalable Bulk GaN Crystal Growth

这个小型企业创新研究（SBIR）二期项目旨在培养氮化镓（GaN）单晶，这种单晶足够大，可以生产用于光电器件的商业上可行的非极性GaN衬底。晶体生长工艺的可行性在第一阶段进行了论证。第二阶段项目将重点关注晶体生长和后端处理方法的可重复性和可扩展性。预计由此产生的每单位价格下降将加速超高亮度发光二极管（LED）制造商采用GaN衬底。该项目的更广泛/商业影响将是为先进的GaN基发光器件（如激光二极管和超高亮度led）提供大面积非极性GaN衬底的潜力。氮化镓基led通过取代低效和/或有毒的传统光源，如灯泡和荧光灯，为固态照明提供了令人兴奋的长期前景。然而，led必须足够低的成本，并显示出高的发光输出功率，以证明取代现有的传统灯是合理的。在非极性GaN衬底上制造的GaN基led将在本项目中开发，具有满足最苛刻的照明要求的潜力，而传统的极性GaN基led最终无法满足要求。

This Small Business Innovation Research (SBIR) Phase II project aims to grow gallium nitride (GaN) single crystals that are large enough to yield commercially-viable non-polar GaN substrates for optoelectronic devices. The feasibility of the crystal growth processes was demonstrated in Phase I. This Phase II project will focus on the reproducibility and scalability of the crystal growth and back-end processing methods. It is anticipated that the resulting per-unit price reduction will accelerate the adoption of GaN substrates by ultra-high brightness light emitting diode (LED) manufacturers.The broader/commercial impacts of this project will be the potential to provide large-area non-polar GaN substrates for applications in advanced GaN-based light emitters such as laser diodes and ultra-high brightness LEDs. GaN-based LEDs present exciting long-term prospects for solid-state lighting, via the replacement of inefficient and/or toxic conventional light sources such as light bulbs and fluorescent lamps. However, the LEDs must be sufficiently low cost and demonstrate high luminous output power to justify the replacement of existing conventional lamps. GaN-based LEDs fabricated on non-polar GaN substrates that will be developed in this project has the potential to meet the most demanding lighting requirements, whereas conventional polar GaN-based LEDs ultimately cannot.