SBIR Phase I: Development of Dual-Tone Photoresist

SBIR第一阶段：双色调光刻胶的开发

• 批准号: 1013091
• 负责人: Sam Sun
• 金额: $ 14.38万
• 依托单位: Suntific Materials, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-01 至 2010-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1013091&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; Dual; Tone

This Small Business Innovation Research (SBIR) Phase I project aims to develop a new photoresist material with dual tones for micro-photolithography. Traditional photoresist material responds to radiations in either positive or negative tone respectively. In this project, a dual-tone photoresist material that responds to radiations in positive and negative tone simultaneously will be investigated. The concept is that the photoresist is only soluble in developer when halfway radiated, resulting in split or doubled patterns. The broader/commercial impact of this project will be the potential to provide a cost-effective photoresist technology for enhanced resolution of micro-photolithography. Currently, the Argon Fluoride (ArF) photolithography has already reached its resolution limit. The double-patterning (DP) process offers higher resolution, but is generally complex and costly. The dual-tone technology is expected to extend ArF lithography to the resolution level of Extreme Ultraviolet (EUV) lithography with lower cost than that of the DP process.

这个小型企业创新研究（SBIR）第一阶段项目旨在开发一种用于微光刻的新型双色调光刻胶材料。 传统的光致抗蚀剂材料分别以正或负色调响应辐射。 在本计画中，将研究一种能同时对正、负性光辐射产生反应的双色调光阻材料。 其概念是，光致抗蚀剂仅在半辐射时可溶于显影剂中，从而导致分裂或加倍的图案。该项目的更广泛/商业影响将是提供一种具有成本效益的光刻胶技术，以提高显微光刻的分辨率。 目前，氟化氩（ArF）光刻已经达到其分辨率极限。 双重图案化（DP）工艺提供更高的分辨率，但通常复杂且昂贵。 双色调技术有望将ArF光刻扩展到极紫外（EUV）光刻的分辨率水平，且成本低于DP工艺。