SBIR Phase I: Development of Dual-Tone Photoresist

这个小企业创新研究（SBIR）第一阶段项目旨在开发一种用于微光刻的新型双色调光刻胶材料。传统的光刻胶材料对辐射的响应分别为正色调或负色调。在这个项目中，将研究一种双色光刻胶材料，该材料同时对正色调和负色调的辐射做出反应。其原理是光刻胶只有在辐射到一半时才溶于显影剂，从而产生分裂或双重图案。该项目的更广泛/商业影响将是提供一种具有成本效益的光刻胶技术，以提高微光刻的分辨率。目前，氟化氩（ArF）光刻技术的分辨率已经达到极限。双图案（DP）过程提供更高的分辨率，但通常是复杂和昂贵的。双色技术有望将ArF光刻技术的分辨率提高到极紫外光刻技术的水平，且成本低于DP工艺。

This Small Business Innovation Research (SBIR) Phase I project aims to develop a new photoresist material with dual tones for micro-photolithography. Traditional photoresist material responds to radiations in either positive or negative tone respectively. In this project, a dual-tone photoresist material that responds to radiations in positive and negative tone simultaneously will be investigated. The concept is that the photoresist is only soluble in developer when halfway radiated, resulting in split or doubled patterns. The broader/commercial impact of this project will be the potential to provide a cost-effective photoresist technology for enhanced resolution of micro-photolithography. Currently, the Argon Fluoride (ArF) photolithography has already reached its resolution limit. The double-patterning (DP) process offers higher resolution, but is generally complex and costly. The dual-tone technology is expected to extend ArF lithography to the resolution level of Extreme Ultraviolet (EUV) lithography with lower cost than that of the DP process.