SBIR Phase I: Potassium Lithium Niobate grown by Modified Laser Heated Pedestal Growth technique for blue and UV laser applications
SBIR Phase I: Potassium Lithium Niobate grown by Modified Laser Heated Pedestal Growth technique for blue and UV laser applications
批准号:
1013679
负责人:
Gisele Maxwell
金额:
$15.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-07-01 至 2010-12-31
中文摘要
这个小型企业创新研究(SBIR)第一阶段项目将展示生长用于蓝光和紫外光(UV)激光应用的KLN倍频晶体的技术可行性。KLN是一种具有理想性能的非线性光学材料,掺入倍频晶体有可能提高蓝光和紫外光激光器的性能和降低成本。然而,由于不可能用提拉法等传统技术以所需的性能和成本重复生长,所以KLN(KLN)晶体还没有进入商业主流。我们开发了一种基于激光加热基座生长(LHPG)技术的专利工艺,将消除KLN晶体商业化的技术障碍。在这个项目中,我们将在795纳米处确定非临界相位匹配所需的KLN的精确组成,以所需的组成优化KLN晶体的质量,然后通过精确掺杂来提高KLN晶体的透明度,从而最大限度地提高KLN晶体的转换效率。第一阶段的技术目标是制造KLN晶体,能够在795 nm处接收16瓦的红外激光功率,并在397.5 nm处产生2瓦的激光功率。该项目的更广泛的影响/商业潜力将是倍频晶体的可用性,这将改善用于检查半导体行业中的光掩模和图案化和非图案化晶片的UV激光器的性能。用于这些应用的检查系统的市场已经发展到每年200个系统,价值5亿美元。即将开发的KLN晶体将使激光制造商能够将更高功率、更坚固、更低成本的紫外光激光器商业化,从而使半导体设备制造商能够开发更好的检查和计量系统。这些检测系统将使芯片制造商能够将未来几代更高性能的集成电路商业化,并提高产量。该项目将与领先的激光制造商Spectra-物理公司密切合作,帮助测试所产生的晶体,使我们能够加快市场接受度。
英文摘要
This Small Business Innovation Research (SBIR) Phase I project will demonstrate the technical feasibility of growing potassium lithium niobate (KLN) frequency doubling crystals for blue and ultraviolet (UV) laser applications. The incorporation of frequency-doubling crystals composed of KLN, a non-linear optical material with desirable properties, has the potential to improve the performance and reduce the cost of blue and UV lasers. However, potassium lithium niobate (KLN) crystals have not entered the commercial mainstream because it is impossible to grow them reproducibly, and with the required performance and cost, by conventional techniques such as the Czochralski method. We have developed a proprietary process based on the laser heated pedestal growth (LHPG) technique that will eliminate the technical barriers to commercializing KLN crystals. In this project, we will determine the precise composition of KLN required for non-critical phase matching at 795 nanometers, optimize the quality of KLN crystals with the required composition, and then maximize the conversion efficiency of KLN crystals by precise doping to increase their transparency. The Phase I technical goal is to create KLN crystals capable of receiving 16 watts of infrared laser power at 795 nm and generating 2 watts of laser power at 397.5 nm. The broader impact/commercial potential of this project will be the availability of frequency doubling crystals which will improve the performance of UV lasers for inspecting photomasks, and patterned and unpatterned wafers in the semiconductor industry. The market for inspection systems for these applications has grown to 200 systems per year and is valued at $500 million. The KLN crystals to be developed will enable laser manufacturers to commercialize higher-power, more robust, lower-cost UV lasers, in turn enabling semiconductor equipment manufacturers to develop improved inspection and metrology systems. These inspection systems will enable chip makers to commercialize future generations of higher-performance integrated circuits, and to increase their yields. This project will be undertaken in close collaboration with Spectra-Physics, a leading laser manufacturer, which will assist in testing the resulting crystals, allowing us to accelerate market acceptance.
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