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CAREER: Group II-VI Semiconductor Vapor Phase Epitaxy Guided by Kinetically Active Surface Agents

CAREER: Group II-VI Semiconductor Vapor Phase Epitaxy Guided by Kinetically Active Surface Agents
职业:动力学活性表面剂引导的 II-VI 族半导体气相外延
批准号:
1053416
负责人:
Svetlana Neretina
金额:
$44.97万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-02-01 至 2016-01-31

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中文摘要
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英文摘要
Technical: The research component of this CAREER award aims to provide a comprehensive understanding of the role that chemically inert species play in the evolution of thin films and nanostructures for the heteroepitaxial deposition of the II-VI semiconductor materials. It tests the hypothesis that an inert gas is able to induce a surfactant-like effect by kinetically disrupting adatom motion such that the thermodynamically preferred island growth mode is inhibited in favor of one that proceeds in a layer-by-layer manner. It investigates, through the use of analytical techniques and device fabrication, whether these growth modes give rise to superior material properties that are of relevance to photovoltaic applications.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The fundamental research, if successful, could help further development of thin-film photovoltaic materials for energy harvesting. Education and outreach activities, geared towards the implementation of engineering solutions that promote sustainability through the use of renewable energy and nanotechnologies, will provide society with engineers equipped with the knowledge, training, and social consciousness needed to realize a sustainable urban environment.
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