SBIR Phase I: Enhanced Reflectivity GEMM Materials for High-Efficiency and Low-Cost III-Nitride LED Technology

SBIR 第一阶段：用于高效、低成本 III 族氮化物 LED 技术的增强反射率 GEMM 材料

• 批准号: 1114008
• 负责人: Robert Jorgenson
• 金额: $ 15万
• 依托单位: Lightwave Photonics, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-07-01 至 2012-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1114008&HistoricalAwards=false
• 关键词: SBIR; Phase; Enhanced; Reflectivity; GEMM

This Small Business Innovation Research Phase I project will investigate the feasibility of using dopants to significantly improve the reflectivity of a novel grown epitaxial-metal-mirror (GEMM) technology to increase light-emitting diode (LED) device performance and substantially reduce the cost of manufacturing high-brightness III-nitride LEDs. The GEMM technology provides an integrated mirror directly into the epitaxial layers of the LED device, which simplifies manufacturing, reduces cost, and improves yield. Furthermore, the GEMM allows for very precise control over the placement of the mirror in order to take advantage of micro-half-cavity effects. The reflectivity of the first-generation GEMM materials for blue wavelengths is approximately 70%-75% and therefore to further improve the performance and efficiency of the GEMM for blue LEDs and drive market adoption of GEMM-LEDs, we will investigate doping of the GEMM materials to shift the reflectivity spectrum to shorter wavelengths. It is anticipated that these doped-GEMM materials will exhibit reflectivities of 90% or greater in the range of 450 to 460 nm, leading to significantly improved LED performance, while simultaneously reducing manufacturing costs, and will ultimately drive solid-state lighting to become truly commercially competitive.The broader impact/commercial potential of this project will be the availability of highly energy-efficient solid-state lighting for general consumer use at a cost that is competitive with compact-fluorescent lamps. Currently, LED-based lamps are 5 to 10 times the cost of comparable compact-fluorescent lamps. The market pull for the GEMM technology relies on a projected 35% to 68% lower production cost per lumen for LED chips, which will motivate LED chip manufacturers to purchase GEMM substrates for device growth. Downstream manufactures of LED-based fixtures and manufacturers that integrate light emitters into their products would also greatly benefit from the lower cost and higher performance of GEMM-LEDs. The successful demonstration of enhanced GEMM materials for LEDs during this project has the potential to accelerate the availability of cost-competitive solid-state lighting and drive consumers to embrace LED-based general lighting. In turn, the acceleration of widespread adoption of solid-state LED-based lighting has the potential to reduce the nation's dependence on foreign energy, reduce domestic greenhouse gas emissions, and revitalize the economy of the United States through the creation of "green" jobs and continued technological leadership.

该小型企业创新研究第一阶段项目将研究使用掺杂剂显著提高新型生长外延金属镜（GEMM）技术的反射率的可行性，以提高发光二极管（LED）器件性能并大幅降低制造高亮度III族氮化物LED的成本。 GEMM技术提供了直接集成到LED器件的外延层中的反射镜，这简化了制造，降低了成本，并提高了产量。 此外，GEMM允许对反射镜的放置进行非常精确的控制，以便利用微半腔效应。 第一代GEMM材料对蓝色波长的反射率约为70%-75%，因此为了进一步提高GEMM用于蓝色LED的性能和效率，并推动GEMM-LED的市场采用，我们将研究GEMM材料的掺杂，以将反射率光谱转移到更短的波长。 预计这些掺杂的GEMM材料在450至460 nm范围内将表现出90%或更大的反射率，从而显著改善LED性能，同时降低制造成本，并将最终推动固态照明成为真正的商业竞争力。该项目更广泛的影响/商业潜力将是高能效固态照明的可用性，以与紧凑型荧光灯具有竞争力的成本提供普通消费者使用的状态照明。 目前，基于LED的灯的成本是类似的紧凑型荧光灯的5到10倍。GEMM技术的市场拉动依赖于LED芯片每流明生产成本降低35%至68%，这将激励LED芯片制造商购买GEMM基板以实现器件增长。 基于LED的灯具的下游制造商和将光发射器集成到其产品中的制造商也将大大受益于GEMM-LED的低成本和高性能。 该项目中用于LED的增强型GEMM材料的成功演示有可能加速具有成本竞争力的固态照明的可用性，并推动消费者接受基于LED的通用照明。 反过来，加速固态LED照明的广泛采用有可能减少国家对外国能源的依赖，减少国内温室气体排放，并通过创造“绿色”就业机会和持续的技术领先地位振兴美国经济。