Resistive switching of amorphous, non-stoichiometric oxide films (A06)

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This project aims at the in-depth understanding of bulk resistive switching in amorphous, non-stoichiometric oxide films. For this purpose, a combination of experimental and theoretical investigations will be per-formed to elucidate the various aspects of the bulk switching mechanism and to compare the switching kinetics with filamentary switching. In addition, we want to generalize our proof of principle results that we obtained within the first period for amorphous gallium oxide to the broad class of amorphous oxides.