Resistive switching of amorphous, non-stoichiometric oxide films (A06)

非晶、非化学计量氧化膜的电阻开关 (A06)

• 批准号: 202259141
• 金额: --
• 依托单位: Lehrstuhl für Physikalische Chemie I
• 依托单位国家: 德国
• 项目类别: Collaborative Research Centres
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/202259141?language=en
• 关键词: Resistive; switching; amorphous; non; stoichiometric

This project aims at the in-depth understanding of bulk resistive switching in amorphous, non-stoichiometric oxide films. For this purpose, a combination of experimental and theoretical investigations will be per-formed to elucidate the various aspects of the bulk switching mechanism and to compare the switching kinetics with filamentary switching. In addition, we want to generalize our proof of principle results that we obtained within the first period for amorphous gallium oxide to the broad class of amorphous oxides.

该项目旨在深入了解非晶、非化学计量氧化物薄膜中的体电阻开关。为此，将进行实验和理论研究相结合，以阐明体开关机制的各个方面，并将开关动力学与丝状开关进行比较。此外，我们希望将我们在第一阶段获得的非晶氧化镓原理证明结果推广到更广泛的非晶氧化物类别。