SBIR Phase I: Electric Field Driven Magnetoresistive Random Access Memory Based on Synthetic Multiferroics

SBIR 第一阶段：基于合成多铁性的电场驱动磁阻随机存取存储器

• 批准号: 1214227
• 负责人: Alexander Khitun
• 金额: $ 14.1万
• 依托单位: Andromeda Scientific LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1214227&HistoricalAwards=false
• 关键词: SBIR; Phase; Electric; Field; Driven

This Small Business Innovation Research (SBIR) Phase I project aims to develop a novel type of Magnetoresistive Random Access Memory based on synthetic multiferroics. Magnetic memory commercially used today exploits an electric current for magnetization switching. The bulk of the consumed energy is wasted due to the relatively low switching efficiency. This project investigates the feasibility of using synthetic multiferroics comprising piezoelectric and magnetostrictive materials for magnetization switching. The key advantage of using multiferroics is the ability to control magnetization state by an electric field. The utilization of electric field instead of electric current makes it possible to significantly reduce the energy per switch. There is an urgent need in low-power consuming memory devices, which would be of great benefit for a variety of practical applications including wireless devices such as cellular phones as well as other devices biased by the portative energy sources. It is the goal of this Phase I project to provide the feasibility study of the electric-field driven magnetic memory.The broader impact/commercial potential of this project includes fundamental advances in portative electronic devices and systems enabling lower power consumption and providing longer operation before battery recharging. The development of fast and low power consuming multiferroic memory has the potential to eventually replace the existing memory elements in a market. If successful, this project will lead to a revolutionary change in the data storage technology by providing fast, scalable and non-volatile memory devices. It is fair to say that the development of low-power consuming memory is of great benefit for society offering better performance for a variety of electronic devices and the overall reduction of electricity consumption.

这个小企业创新研究（SBIR）第一阶段项目旨在开发一种基于合成多铁性的新型磁阻随机存取存储器。目前商业上使用的磁存储器利用电流进行磁化开关。由于相对较低的开关效率，大部分消耗的能量被浪费了。本项目探讨了利用压电和磁致伸缩材料组成的合成多铁质材料进行磁化开关的可行性。多铁性材料的主要优点是能够通过电场控制磁化状态。利用电场代替电流，可以大大降低开关的能量。低功耗存储器件是一种迫切的需求，它将为各种实际应用带来巨大的好处，包括无线设备，如蜂窝电话以及其他受传输能源影响的设备。本一期项目的目标是提供电场驱动磁存储器的可行性研究。该项目的更广泛的影响/商业潜力包括便携式电子设备和系统的基本进步，使其能够降低功耗，并在电池充电前提供更长的操作时间。快速和低功耗的多铁存储器的发展有可能最终取代市场上现有的存储元件。如果成功，该项目将通过提供快速、可扩展和非易失性存储设备，导致数据存储技术的革命性变化。可以说，低功耗存储器的发展对社会有很大的好处，可以为各种电子设备提供更好的性能，并降低整体的电力消耗。