Scalable Digital Spin Logic Devices

这个项目将结合联合收割机专业知识的PI在自旋运输和Co-PI在多铁性材料的设备，开发一个新的逻辑范例，能够规避的基本限制的充电为基础的电路。该团队将在一个可扩展的架构中利用电子自旋和固态磁性之间的相互作用，避免与电子逻辑电路操作相关的缺点。非平衡自旋（从单畴铁磁位注入到自旋守恒沟道材料中）可以通过自旋扭矩和交换力耦合到其他磁性位。磁化切换的致动以及因此逻辑处理通过由来自多铁性和压电材料异质结构的界面磁致伸缩应变以几乎无耗散的方式引起的有效场来实现。这些概念的材料，耦合和驱动是自然的主题，指导研究任务，并将导致实现的技术能够满足可行的计算系统的五个基本要求：非线性，增益，可连接性，反馈消除，和一套完整的布尔运算。拟议研究的智力价值在于，它直接解决了实现全自旋逻辑器件技术必须克服的基本科学挑战。 硅和锗将作为模型半导体自旋守恒沟道材料进行研究。在铁磁体和沟道材料之间的界面处的自旋扭矩和交换耦合强度将被测量。 压电电压介导的控制磁开关障碍将实现，并切换的磁性位使用非平衡自旋在相邻的非磁性通道材料将首次展示。 其结果将是一个详细的了解的必要条件，使用电压控制的磁致伸缩产生的有效磁场，以实现快速磁化切换与最小的强迫非平衡自旋和最小的能量耗散。 拟议活动的更广泛影响在于这种新的逻辑处理范式的潜力，以继续基于电荷的电子系统的性能趋势（通过数十年的扩展建立），具有重大的经济，环境和社会影响。自旋电子器件的优势，使低功耗，即时电子允许增加设备的便携性，并在今天的光是特别重要的。能源成本的增加和环境的破坏。通过培训研究生在科学和工程的各个方面，包括半导体器件设计，加工，测量和自旋电子学，实现了额外的更广泛的影响;以及旨在扩大中小学生、家长、和一般公众的历史性重要性的缩放在半导体电子行业和面临的挑战，因为缩放达到其年底，十年

This project will combine expertise of PI in spin transport and of Co-PI in multiferroic materials & devices to develop a new logic paradigm capable of circumventing the fundamental limitations of charged-based circuits. The team will exploit the interactions between electron spin and solid-state magnetism in a scalable architecture which avoids the shortcomings relevant to electronic logic circuit operation. Non-equilibrium spin (injected into a nonmagnetic, spin-conserving channel material from single-domain ferromagnetic bits) can couple to other magnetic bits through spin torque and exchange force. The actuation of magnetization switching and therefore logic processing, is enabled by effective fields induced by interfacial magnetostrictive strain from multiferroic and piezoelectric material heterostructures in a virtually dissipation-free way. These concepts of materials, coupling, and actuation are natural themes which guide the research tasks and will lead toward realization of a technology capable of satisfying the five fundamental requirements for viable computing systems: non-linearity, gain, concatenability, feedback elimination, and a complete set of Boolean operations. The Intellectual Merit of the proposed research is that it directly addresses the fundamental scientific challenges that must be overcome to realize an all-spin logic device technology. Silicon and germanium will be studied as model semiconductor spin-conserving channel materials. The spin torque and exchange coupling strengths at the interface between ferromagnet and channel material will be measured. Piezoelectric voltage-mediated control over magnetic switching barriers will be achieved, and switching of a magnetic bit using non-equilibrium spins in a neighboring non-magnetic channel material will be demonstrated for the first time. The result will be a detailed understanding of the necessary conditions for using the effective magnetic field generated by voltage-controlled magnetostriction to effect rapid magnetization switching with minimal forcing by non-equilibrium spins and minimal energy dissipation. The Broader Impact of the proposed activity is in the potential of this new logic processing paradigm to continue performance trends (established through decades of scaling) in charge-based electronic systems with significant economic, environmental, and societal ramifications. The advantages afforded by spintronics devices of enabling lower-power, instant-on electronics allow increased device portability and are especially important in light of today?s increasing energy costs and its environmental damage. Additional Broader Impact is achieved through training graduate students in diverse aspects of science and engineering including semiconductor device design, processing, measurement, and spintronics; and activities designed to broaden understanding by elementary and high-school students, parents, and the general public of the historical importance of scaling in the semiconductor electronics industry and the challenges faced as scaling reaches its end in the next decade.