GOALI: Experimental and Theoretical Investigation of Thermal Transport in Three-Dimensional Integrated Circuits (3D ICs)

GOALI：三维集成电路 (3D IC) 中热传输的实验和理论研究

• 批准号: 1236370
• 负责人: Ankur Jain
• 金额: $ 20.06万
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-15 至 2016-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1236370&HistoricalAwards=false
• 关键词: GOALI; Experimental; Theoretical; Investigation; Thermal

CBET-1236370PI: Jain, AnkurThe vertical stacking of multiple Silicon substrates containing microelectronic circuits, often referred to as a three-dimensional integrated circuit (3D IC) promises to provide substantial performance improvement while also exacerbating the thermal management challenge. 3D IC technology introduces several new materials and interfaces whose thermal and thermomechanical performance remains poorly known. The objective of this research is to investigate and measure fundamental thermal transport and thermomechanical properties of materials and interfaces in 3D IC technology. Time-domain Joule heating methods will be used to characterize thermal transport through die-to-die interfaces in 3D ICs. Thermomechanical properties of such interfaces will be measured. This research will improve the understanding of thermal transport in 3D ICs. Experimental data obtained in this work will help validate several analytical and simulations-based models that have recently been developed. The long-term goal of this research will be to develop a complete understanding of the interaction between thermal transport and electrical design of 3D ICs and other advanced microelectronic systems. It is expected that by addressing thermal management concerns in 3D ICs, the proposed work will enable 3D ICs with improved electrical performance. This work will contribute to a More-than-Moore approach for design of next-generation microelectronics wherein cost-effective performance improvement is achieved not just by dimensional scaling, but also by vertical integration. The work will be tightly-integrated with industry partners which will facilitate technology transfer of key thermal management principles in 3D ICs to the industry. While the industry will benefit from the fundamental, enabling nature of the work, graduate students will also benefit from mentorship by leading industry technologists and internships. Undergraduate students will be included in this research through senior capstone projects and through REUs during the summer. Research findings from the project will be incorporated into graduate-level and upper-level undergraduate courses being taught at the University of Texas at Arlington.

包含微电子电路的多个硅衬底的垂直堆叠，通常被称为三维集成电路（3D IC），有望提供实质性的性能改进，同时也加剧了热管理挑战。3D集成电路技术引入了几种新的材料和界面，其热学和热机械性能仍然知之甚少。本研究的目的是研究和测量三维集成电路技术中材料和界面的基本热传递和热力学性能。时域焦耳加热方法将用于表征三维集成电路中通过模对模界面的热传输。这些界面的热机械性能将被测量。本研究将提高对三维集成电路热输运的认识。在这项工作中获得的实验数据将有助于验证最近开发的几个基于分析和模拟的模型。这项研究的长期目标将是全面了解3D集成电路和其他先进微电子系统的热输运和电气设计之间的相互作用。预计通过解决3D ic中的热管理问题，提议的工作将使3D ic具有更好的电气性能。这项工作将有助于下一代微电子设计的超越摩尔方法，其中成本效益的性能改进不仅通过尺寸缩放实现，而且通过垂直集成实现。这项工作将与行业合作伙伴紧密结合，这将促进3D集成电路关键热管理原则的技术转移到行业。虽然该行业将受益于这项基础性工作，但研究生也将受益于行业领先技术专家的指导和实习机会。本科生将在夏季通过高级顶点项目和reu参与这项研究。该项目的研究成果将被纳入德克萨斯大学阿灵顿分校的研究生和高级本科课程。