Workshop: 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices. To be Held July, 14-17, 2013 in Fayetteville, Arkansas.

研讨会：第四届含铋半导体国际研讨会：生长、特性和器件。

• 批准号: 1303830
• 负责人: Shui-Qing Yu
• 金额: $ 2.47万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-06-01 至 2014-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1303830&HistoricalAwards=false
• 关键词: Workshop; 4th; International; Bismuth; Containing

The objective of this program is to provide support for 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices.The intellectual merit is that III-V semiconductor alloys containing Bismuth are a relatively unexplored family of materials and have attracted substantial interests due to their potential device applications. In order to promote the collaboration and communication in the field of research for Bismuth-Containing Semiconductors, bridge the researchers with industry collaborators and funding agencies, and strategically steer the overall research direction, the PI will organize 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices, to be hosted by University of Arkansas (UA). This meeting will bring together groups undertaking research in the emerging area of Bismuth-containing materials and devices for a three-day workshop. The workshop will include research presentations, panel discussions, social events, and a lab tour to UA material and device research facilities. The broader impacts are: i) Bringing together experimentalists and theoreticians who study Bi-containing materials for optoelectronics; ii) Obtaining the latest updates in this field through presentations; iii) Conducting discussions regarding how this research field can be promoted for future growth. The Workshop will organize a series of social events break so that there is substantial amount of time for the participants to get familiar each other, to exchange research ideas, and develop friendship for future collaboration. A website for the Workshop will be developed to document the program, presentations, panel discussions, and participant list. A plan has been made to promote the diversity of participants.

本项目的目标是为第四届含铋半导体国际研讨会提供支持：生长、性能和器件。其学术价值是含铋的III-V族半导体合金是一个相对未开发的材料家族，由于其潜在的器件应用而引起了人们的极大兴趣。为了促进含铋半导体研究领域的合作和交流，为研究人员与行业合作者和资助机构搭建桥梁，并从战略上引导整体研究方向，PI将组织第四届含铋半导体国际研讨会：生长，性质和器件，由阿肯色州大学（UA）主办。 这次会议将召集在含铋材料和器件这一新兴领域开展研究的团体，举办为期三天的讲习班。 研讨会将包括研究报告，小组讨论，社交活动，以及对UA材料和设备研究设施的实验室参观。 更广泛的影响是：i）将研究含Bi材料用于光电子学的实验学家和理论家聚集在一起; ii）通过演讲获得该领域的最新信息; iii）就如何促进该研究领域的未来发展进行讨论。工作坊将安排一系列的社交活动，让参与者有足够的时间互相熟悉，交流研究想法，并为未来的合作发展友谊。 将为讲习班开发一个网站，以记录方案、演讲、小组讨论和与会者名单。 制定了促进参与者多样性的计划。