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Workshop: 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices. To be Held July, 14-17, 2013 in Fayetteville, Arkansas.

Workshop: 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices. To be Held July, 14-17, 2013 in Fayetteville, Arkansas.
研讨会:第四届含铋半导体国际研讨会:生长、特性和器件。
批准号:
1303830
负责人:
Shui-Qing Yu
金额:
$2.47万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-06-01 至 2014-05-31

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中文摘要
翻译
该项目的目的是为第四届含铋半导体:生长、性质和器件国际研讨会提供支持。智力上的优点是,含铋的III-V半导体合金是一个相对未开发的材料家族,由于其潜在的器件应用而吸引了大量的兴趣。为了促进含铋半导体研究领域的合作与交流,为研究人员与行业合作伙伴和资助机构搭建桥梁,战略性地引导整体研究方向,PI将组织由阿肯色大学(UA)主办的第四届含铋半导体:生长,性质和器件国际研讨会。这次会议将汇集在新兴的含铋材料和装置领域进行研究的小组,为期三天的讲习班。研讨会将包括研究报告、小组讨论、社交活动,以及参观UA材料和设备研究设施的实验室。更广泛的影响是:i)将研究含铋光电子材料的实验家和理论家聚集在一起;ii)通过介绍获得该领域的最新情况;iii)就如何促进该研究领域的未来发展进行讨论。工作坊将安排一系列的社交活动,让参加者有充足的时间互相熟悉,交流研究想法,并为未来的合作发展友谊。研讨会将建立一个网站,记录会议计划、演讲、小组讨论和与会者名单。已经制定了一项促进参加者多样性的计划。
英文摘要
The objective of this program is to provide support for 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices.The intellectual merit is that III-V semiconductor alloys containing Bismuth are a relatively unexplored family of materials and have attracted substantial interests due to their potential device applications. In order to promote the collaboration and communication in the field of research for Bismuth-Containing Semiconductors, bridge the researchers with industry collaborators and funding agencies, and strategically steer the overall research direction, the PI will organize 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices, to be hosted by University of Arkansas (UA). This meeting will bring together groups undertaking research in the emerging area of Bismuth-containing materials and devices for a three-day workshop. The workshop will include research presentations, panel discussions, social events, and a lab tour to UA material and device research facilities. The broader impacts are: i) Bringing together experimentalists and theoreticians who study Bi-containing materials for optoelectronics; ii) Obtaining the latest updates in this field through presentations; iii) Conducting discussions regarding how this research field can be promoted for future growth. The Workshop will organize a series of social events break so that there is substantial amount of time for the participants to get familiar each other, to exchange research ideas, and develop friendship for future collaboration. A website for the Workshop will be developed to document the program, presentations, panel discussions, and participant list. A plan has been made to promote the diversity of participants.
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CAREER: High Performance III-V-Bismide Mid-Infrared Semiconductor Lasers
  • 批准号:
    1149605
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
    2012
  • 负责人:
    Shui-Qing Yu
  • 依托单位:
海外基金