CAREER: High Performance III-V-Bismide Mid-Infrared Semiconductor Lasers

AbstractTechnical：本CAREER提案将在III-V族二硫化物器件的新兴领域启动一个主要的研究方向。III-V族化合物半导体含有最重的自然存在的V族元素铋，是一种相对未开发的材料系统，预计将提供许多独特的光学和电学特性，这些特性是许多创新器件应用所需的。本研究着重于利用分子束磊晶（MBE）成长于GaSb基底上的（In）GaAsSbBi材料发展高效能中红外（3-4微米）I型量子井（QW）雷射。分析表明，（In）GaAsSbBi基量子阱激光器可以很容易地获得3-4微米的发射，具有很大的实现高性能的潜力。该项目的系统研究计划将包括三项任务：i）III-V-Bi的MBE生长和材料表征，ii）红外激光器和中红外探测器/发射器的开发，以及iii）中红外激光器的开发;这是由“网络”任务补充的，这将有效地促进PI的学术生涯的发展。该研究项目将通过开发新型（In）GaAsSbBi活性材料来解决GaSb基I型QW激光器的性能问题，这些材料提供i）扩展的激光波长，ii）改进的空穴限制，iii）抑制主要的俄歇损耗机制，v）避免InGaAsSb基化合物中的生长可扩展性间隙，以及vi）用于高度可靠的高功率应用的“准无Al”器件设计。材料工作的目的是通过技术的发展，以合金铋，表面偏析，与III-V族半导体，并使用铋作为表面活性剂，以提高阻挡层/包覆层的质量的上级设备性能。该研究将建立在PI在光电材料和器件设计、生长、制造和表征领域的经验基础上。非技术：基于（In）GaAsSbBi材料系统的器件的成功开发将填补高性能半导体激光器的3-4微米空白，并使许多重要的中红外应用成为可能，如传感、通信、外科手术、光学集成和国土安全。该项目将为研究生提供先进光电子器件各个方面的综合培训，并让本科生大量参与。这项研究活动将促进发现和理解，同时通过与“生物材料世界网络”的密切合作促进教学，培训和学习，以开发用于研究和教育的网络工具。推广活动包括通过现有的大学课程和推广活动招募STEM代表性不足的学生，包括参加“绿色”团队，在HBCU进行高中教师和两年制大学教师培训以及光学和太阳能电池领域的教学实验室建设。

AbstractTechnical: This CAREER proposal will launch a major research direction in the emerging field area of III-V bismide devices. III-V compound semiconductors containing the heaviest naturally occurring group V element, Bismuth, is a relatively unexplored material system that is expected to offer many unique optical and electrical properties desirable for numerous innovative device applications. This research emphasizes the development of high performance Mid-IR (3-4 micron) type-I quantum well (QW) lasers using the (In)GaAsSbBi materials grown on GaSb substrates by molecular beam epitaxy (MBE). An analysis shows that (In)GaAsSbBi based QW lasers can easily obtain 3-4 micron emission and they have a great potential to achieve high performance. A systematic research plan for this project will be studied with three tasks: i) MBE growth of III-V-Bi and material characterization, ii) Development of infrared lasers and Mid-IR detectors/emitters, and iii) Development of Mid-IR lasers; which are complemented by a "Networking" task that will effectively promote the development of the PI's academic career. This research project will address performance issues in GaSb based type-I QW lasers through the development of novel (In)GaAsSbBi active materials that offer i) extended lasing wavelengths, ii) improved hole confinement, iii) the suppression of the dominant Auger loss mechanism, v) the avoidance of the growth miscibility gap in InGaAsSb based compounds, and vi) a "quasi-Al free" device design for highly reliable high power applications. The material work aims at superior device performance through the development of techniques to alloy Bi, which surface segregates, with III-V semiconductors, and to use Bi as a surfactant to improve the quality of barrier/cladding layers. The reserach will build on the PI's experiences in the areas of optoelectronic materials and device design, growth, fabrication, and characterization.Non Technical:The successful development of devices based on the (In)GaAsSbBi material system will fill the 3-4 micron gap in high performance semiconductor lasers and enable many important Mid-IR applications, such as sensing, communication, surgery, optical integration, and homeland security. This project will provide comprehensive training for graduate students in all aspects of advanced optoelectronic devices and as well heavy involvement of undergraduate students. This research activity will advance discovery and understanding while promoting teaching, training, and learning through strong collaborations with the "Bismuth Materials World Network" to develop cybertools for research and education. The outreach activities include the recruitment of STEM underrepresented students through existing university programs and outreach activities that include participation in the "Green" team to conduct high school teacher and two year college faculty training and instruction lab construction in HBCU in the areas of optics and solar cells.