On the Novel Properties of Ir Modified Si(001) and Si(111) Surfaces: Nanowires and Rashba Type Spin-Orbit Splitting

Ir 修饰的 Si(001) 和 Si(111) 表面的新性质:纳米线和 Rashba 型自旋轨道分裂

基本信息

  • 批准号:
    1306101
  • 负责人:
  • 金额:
    $ 35.86万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2013
  • 资助国家:
    美国
  • 起止时间:
    2013-06-01 至 2017-05-31
  • 项目状态:
    已结题

项目摘要

Technical Description: This research project investigates iridium modified silicon surfaces at (001) and (111) orientations using surface science tools such as scanning tunneling microscopy and spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The project contains two major research components. The first component focuses on iridium silicide nanowires formed on Si(001) surface. The physical and electronic properties of these nanowires are investigated. The second research component is on the electronic properties of the root-7 by root-7 phase observed on Ir/Si(111) surface. The research is carried out at the University of North Dakota, in collaboration with other scientists nationally and internationally.Non-technical Description: Investigation of the initial stages of thin-film growth on various semiconductor surfaces is important because of the technological relevance of these interfaces and the novel physics that these interfaces exhibit. This research project focuses on iridium-silicon interface, which has not been investigated extensively. In addition to the fundamental understanding gained during the course of the project, graduate and undergraduate students are trained in the art of research. The students involved in this project learn technologically relevant topics such as nanoelectronics, low-dimensional physics, and semiconductors. In addition, the project includes outreach activities that are designed to attract participants from local/tribal high-school students.
技术说明:该研究项目使用表面科学工具,如扫描隧道显微镜和光谱学,低能电子衍射和俄歇电子能谱,研究(001)和(111)取向的铱改性硅表面。该项目包括两个主要的研究组成部分。第一个部分重点关注Si(001)表面上形成的硅化铱纳米线。这些纳米线的物理和电子性质进行了研究。第二个研究部分是在Ir/Si(111)表面上观察到的root-7 by root-7相的电子性质。这项研究是在北达科他州大学进行的,与其他科学家合作,在国内和international.Non-technical描述:调查的初始阶段的薄膜生长在各种半导体表面是重要的,因为这些接口和新的物理技术的相关性,这些接口的展品。本研究计画针对铱-矽界面,目前尚未有广泛的研究。除了在项目过程中获得的基本理解外,研究生和本科生还接受研究艺术方面的培训。参与该项目的学生学习技术相关的主题,如纳米电子学,低维物理学和半导体。此外,该项目还包括旨在吸引当地/部落高中学生参加的外联活动。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Nuri Oncel其他文献

CrSi<sub>2</sub> crystallites on Si(110)
  • DOI:
    10.1016/j.susc.2020.121739
  • 发表时间:
    2021-01-01
  • 期刊:
  • 影响因子:
  • 作者:
    Sameera Pathiranage;Edirisuriya M.D. Siriwardane;Rasika Mohottige;Deniz Çakır;Nuri Oncel
  • 通讯作者:
    Nuri Oncel

Nuri Oncel的其他文献

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{{ truncateString('Nuri Oncel', 18)}}的其他基金

MRI: Acquisition of an Atomic Force Microscope
MRI:购买原子力显微镜
  • 批准号:
    2117014
  • 财政年份:
    2021
  • 资助金额:
    $ 35.86万
  • 项目类别:
    Standard Grant

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