22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders, Summer 2013 at University of New Mexico in Albuquerque, NM

第 22 届 RD50 高亮度对撞机抗辐射半导体器件研讨会，2013 年夏季，新墨西哥州阿尔伯克基新墨西哥大学

• 批准号: 1307909
• 负责人: Sally Seidel
• 金额: $ 1万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-01-15 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1307909&HistoricalAwards=false
• 关键词: 22nd; RD50; Workshop; Radiation; Hard

The University of New Mexico will host the 22nd Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders on its campus from June 3 to 5, 2013. This represents the first North American meeting in a series dating from 2001. Silicon detectors, including strip and pixel devices are ubiquitous in modern particle physics and nuclear physics experiments. The advent of three-dimensional devices and multi-layer structures used for local track triggering afford the prospects of bring tracking information to the earliest stages of trigger decisions for the data recording of very rare phenomena in a horrendous background of uninteresting processes.Given the very high radiation fields in which these devices are located, and the attendant high readout rates needed to deal with signals both in situ and off detector, an ongoing strong effort is needed to conduct R&D and discuss results and challenges across the field on a regular basis. This workshop affords the scientific community such an opportunity. Sessions will cover Material and Defect Characterization, Detector Characterization, Full Detector Systems, and New Structures. A half day mini workshop on radiation damage at LHC experiments is planned for the afternoon of June 5. An important broader impact of the workshop is that attendance by junior members of the instrumentation community is a priority for the meeting. All talks will be plenary, providing excellent visibility for both experts and younger scientists.

新墨西哥州大学将于2013年6月3日至5日在其校园内举办第22届高亮度对撞机抗辐射半导体器件研讨会。这是自2001年以来的一系列北美会议中的第一次。硅探测器，包括条形和像素器件，在现代粒子物理和核物理实验中无处不在。 用于局部径迹触发的三维器件和多层结构的出现提供了将跟踪信息带到触发决策的最早阶段的前景，用于在不感兴趣的过程的可怕背景中记录非常罕见的现象。以及处理原位和探测器外信号所需的伴随高读出速率，需要持续的强有力的努力来进行&研发，并定期讨论整个领域的结果和挑战。 这次研讨会为科学界提供了这样一个机会。 会议将涵盖材料和缺陷表征，探测器表征，完整的探测器系统，和新的结构。为期半天的小型研讨会将于6月5日下午举行，主题是LHC实验中的辐射损伤。讲习班的一个重要的更广泛的影响是，仪器仪表界的初级成员的出席是会议的一个优先事项。 所有会谈将是全体会议，为专家和年轻科学家提供良好的能见度。