Towards a Fundamental Understanding of Hot-Carrier Transport across Materials Interfaces
Towards a Fundamental Understanding of Hot-Carrier Transport across Materials Interfaces
批准号:
1308102
负责人:
Vincent LaBella
金额:
$28.04万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-09-15 至 2017-04-30
中文摘要
技术描述:本研究的目的是发展跨材料界面的载流子输运的基本理解。不同材料之间的整流界面,如p-n结和金属-半导体接触,是现代数字逻辑和光电器件的基础。这项研究提供了知识如何载流子衰减,平行动量守恒,和界面能带结构影响载流子输运。科学目标是:i)测量界面能带结构和平行动量守恒对载流子衰减的影响,ii)以纳米级分辨率局部映射这些影响,以及iii)开发增强或抑制这些影响的定制材料界面。该技术方法包括薄膜沉积在一个国家的最先进的真空室,和载流子传输测量使用低温原位弹道电子发射microscopic.Non-technical描述:该项目涉及的电荷载流子传输跨材料界面的基本领域,具有很高的技术相关性。热载流子衰减、平行动量守恒和界面能带结构是固态逻辑和光电器件中载流子输运的基本方面。这种知识的进步使得能够改进功能和效率,这是跟上对电子设备不断增长的需求所迫切需要的。 此外,还包括一个重要的外展和教育计划,使高中学生能够获得研究经验,以及参与社区和K-12外展活动。此外,对研究生和本科生,包括来自代表性不足群体的研究生和本科生的强化培训和发展是该项目的重要组成部分。
英文摘要
Technical Description: The objective of this research is to develop a fundamental understanding of carrier transport across materials interfaces. Rectifying interfaces between different materials such as p-n junctions and metal-semiconductor contacts are the foundation of modern digital logic and optoelectronic devices. This research provides knowledge of how carrier attenuation, parallel momentum conservation, and interface band structure affect carrier transport. The scientific objectives are to: i) measure the effects of interface band structure and parallel momentum conservation upon carrier attenuation, ii) locally map these effects with nanoscale resolution, and iii) develop custom materials interfaces which enhance or suppress these effects. The technical approach consists of thin film deposition in a state-of-the-art ultrahigh vacuum chamber, and carrier transport measurements using low-temperature in-situ ballistic electron emission microscopy.Non-technical Description: The project addresses fundamental areas of charge carrier transport across materials interfaces that have high technological relevance. Hot-carrier attenuation, conservation of parallel momentum, and interface band structure are fundamental aspects of carrier transport in solid state logic and optoelectronic devices. Advancements in this knowledge enable improvements in functionality and efficiency that are critically needed to keep pace with the ever increasing demands placed upon electronic devices. In addition, a significant program in outreach and education is included that enables research experience for high-school students, as well as the participation in community and K-12 outreach events. Furthermore intensive training and development of graduate and undergraduate students, including those from underrepresented groups, is a significant part of the project.
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CAREER: Towards an Atomic Scale Understanding of Spin Polarized Electron Transport
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批准号:0349108
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项目类别:Continuing Grant
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资助金额:$40.02万
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财政年份:2004
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负责人:Vincent LaBella
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依托单位:
海外基金