SBIR Phase I: Novel Heterostructure Doping for Optoelectronic Devices

SBIR 第一阶段：用于光电器件的新型异质结构掺杂

• 批准号: 1315465
• 负责人: Brian Hertog
• 金额: $ 15万
• 依托单位: Agnitron Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-07-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1315465&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Heterostructure; Doping

This Small Business Innovation Research (SBIR) Phase I project addresses the development of a novel technique for improving the efficiency of ultraviolet (UV) light emitting devices (LEDs). The UV LED fabrication process typically includes deposition of thin semiconductor films onto substrates that can be fabricated into devices. Traditionally, during the deposition process impurities are added to the semiconductor films to obtain the desired electrical properties. The introduction of the impurities, however, produces defects in the semiconductor materials that can limit the efficiency of the devices. The technique proposed in this project will modify the deposition process of the semiconductor films in order to obtain the desired electrical properties without the use of intentional impurities. This has the potential of producing much more efficient light emitters. The proposed technique has the added advantage of producing material whose electrical properties are less sensitive to temperature, which can prove useful for many applications. The composition of the semiconductor materials investigated in this project can be modified to produce LEDs capable of emitting light from the ultraviolet to visible range. A successful project will lead to an enabling technology for development of novel, high efficiency LEDs.The broader impacts/commercial potential of this project addresses the development of efficient light emitting semiconductor devices. Fundamental physical properties studied in this effort will enhance scientific and technological understanding of the nature of semiconductors. These advances may yield a new paradigm for functionalizing semiconductor materials for more efficient and higher performance optical and electronic devices. Possible applications for this technological advance include general room lighting, traffic lights, outdoor displays, automotive applications, water treatment, sterilization, and ultrahigh density optical storage systems. Moreover, the technique proposed in this work may lead to improvement in the performance of other microelectronic devices such as transistors, laser diodes, modulators and photodetectors. The proposed devices will enable unique high power and extreme temperature operation as the approach does not face the same limitations as currently used technology. Significant commercialization potential exists for the proposed technology on the basis of superior performing devices in the aforementioned categories.

这个小企业创新研究（SBIR）第一阶段项目致力于开发一种新技术，以提高紫外线（UV）发光设备（led）的效率。UV LED制造工艺通常包括将薄半导体薄膜沉积到可以制造成器件的基板上。传统上，在沉积过程中，将杂质添加到半导体薄膜中以获得所需的电性能。然而，杂质的引入会在半导体材料中产生缺陷，从而限制器件的效率。在这个项目中提出的技术将修改半导体薄膜的沉积过程，以获得所需的电性能，而不使用故意的杂质。这有可能生产出更高效的光源。所提出的技术还有一个额外的优点，即生产的材料的电性能对温度不太敏感，这在许多应用中都是有用的。半导体材料的组成调查在这个项目可以修改生产led的发光能力紫外可见范围。一个成功的项目将导致一种使能技术的发展，新颖，高效的led。该项目更广泛的影响/商业潜力涉及高效发光半导体器件的开发。在这项工作中研究的基本物理性质将加强对半导体性质的科学和技术理解。这些进展可能会产生一个新的范例，使半导体材料功能化，以实现更高效、性能更高的光学和电子器件。这一技术进步的可能应用包括一般室内照明、交通信号灯、户外显示器、汽车应用、水处理、灭菌和超高密度光存储系统。此外，这项工作中提出的技术可能会导致其他微电子器件如晶体管、激光二极管、调制器和光电探测器性能的改善。所提出的器件将实现独特的高功率和极端温度操作，因为该方法不像目前使用的技术那样面临相同的限制。在上述类别中性能优越的设备的基础上，所提议的技术存在显著的商业化潜力。