SBIR Phase I: Development of Large-Area Crystal-Aligned Substrates for Epitaxial Graphene
SBIR Phase I: Development of Large-Area Crystal-Aligned Substrates for Epitaxial Graphene
批准号:
1315805
负责人:
Vladimir Matias
金额:
$15.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-07-01 至 2013-12-31
中文摘要
这个小企业创新研究(SBIR)第一阶段项目解决了石墨烯薄膜基板的需求。石墨烯是一种独特的二维材料,被称为?奇迹材料?因为它具有非凡的结构和电子特性,可用于许多应用。然而,石墨烯是一种相对较新的材料,因此仍然不能在大面积上可重复地制造。通过在碳化硅上的表面分解和通过在催化金属如铜上的化学气相沉积,已经在单晶上合成了高度完美的外延石墨烯膜。但是呢?外延生长?其中石墨烯原子与衬底配准受到单晶衬底要求的限制。沉积在标准多晶材料上的石墨烯的电子性质由于衬底中的晶粒失配而不是最佳的。在这个项目中,我们利用离子束辅助沉积技术在各种表面(如玻璃和金属箔)上制备类似单晶的涂层。我们探索这些人工对齐的薄膜,以产生大面积的衬底外延石墨烯的沉积。这种衬底将使人们能够在许多不同的表面上存款高性能的外延石墨烯,而不需要刚性的单晶衬底。该项目更广泛的影响/商业潜力是提供一种大面积制造高质量石墨烯薄膜的技术。石墨烯提供了一种独特的性能组合,如非常高的导电性,光学透明度和机械鲁棒性,使其成为光电器件,显示器和其他光电器件中透明电极的优秀候选者。然而,仍然需要的是在各种不同表面上提供大面积高性能石墨烯的技术。通过提供一个可扩展的方法?晶体排列?在膜沉积中,离子束膜对准技术又可以使得能够生产大面积外延石墨烯膜。这些石墨烯薄膜的质量应该接近那些在小单晶晶片上制成的石墨烯薄膜。这种晶体对准模板的使用已经被证明用于外延超导膜,该外延超导膜用于制造千米长的高温超导导线。
英文摘要
This Small Business Innovation Research (SBIR) Phase I project addresses the need for substrates for graphene films. Graphene is a unique two-dimensional material that has been called the ?miracle material? because of its extraordinary structural and electronic properties that can be used in many applications. However, graphene is a relatively new material and as such is still not reproducibly fabricated in large areas. Highly perfect epitaxial graphene films have been synthesized on single crystals via surface decomposition on silicon carbide and by chemical vapor deposition on catalytic metals such as copper. However ?epitaxial growth? where graphene atoms are in registry with the substrate is limited by the single-crystal substrate requirement. Electronic properties of graphene deposited on standard polycrystalline materials are not optimal due to grain mismatch in the substrate. In this project we utilize ion-beam assisted deposition technology to make single-crystal like coatings on a variety of surfaces such as glass and metal foils. We explore these artificially aligned films to produce large area substrates for deposition of epitaxial graphene. Such substrates would enable one to deposit high-performance epitaxial graphene on many different surfaces without the need for rigid single-crystal substrates.The broader impact/commercial potential of this project is to provide a technology for large-area fabrication of high-quality graphene films. Graphene offers a singular combination of properties such as very high conductivity, optical transparency, and mechanical robustness, making it an excellent candidate for transparent electrodes in photovoltaics, displays, and other optoelectronic devices. However, what is still needed is a technology for providing large-area high-performance graphene on a variety of different surfaces. By providing a scalable method of ?crystal-aligned? film deposition, the ion-beam film aligning technology can in turn enable large-area epitaxial graphene films to be produced. These graphene films should approach the quality of those made on small single-crystal wafers. Use of such crystal-aligned templates has already been proven for epitaxial superconducting films that are used to manufacture high temperature superconductor wire in kilometer lengths.
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