Workshop: 8th IW on Bulk Nitride Semiconductors: Growth Properties and Devices, to be held in Bavaria, Germany, Sept.30-Oct.5, 2013

研讨会：第八届块状氮化物半导体 IW：生长特性和器件，将于 2013 年 9 月 30 日至 10 月 5 日在德国巴伐利亚举行

• 批准号: 1358715
• 负责人: Daniel Stancil
• 金额: $ 1万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-10-01 至 2016-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1358715&HistoricalAwards=false
• 关键词: Workshop; 8th; IW; Bulk; Nitride

Objective: The proposed project is to the 8th International Workshop on Bulk Nitride Semiconductors to be held in Bavaria, Germany, Sept.30 - Oct.5, 2013. The requested support of $10,000 is will be used to provide travel and accommodation support or in the form of registration fees for up to 10 participants in the conference.Intellectual Merit: This Workshop will bring together researchers focused on developing growth technologies and applying these technologies to grow bulk nitride materials and device structures for electronic, optoelectronic and photonic applications. Leading experts will present recent accomplishments in the field of bulk nitride growth, properties and their application in electronics and optoelectronics. The specific goal of the workshop is to identify critical challenges remaining in these fields and to facilitate establishing international collaborations to jointly work on their solutions. This meeting offers a unique opportunity for the community to share the exciting state-of-the-art technological developments, stimulate new ideas, learn new challenges and directions, and explore/promote new collaborations.Broader Impact: The meeting aims to bring together international researchers from academia, government and industry to present and assess the current state-of-the-art of growth of bulk nitride materials and device structures for electronic, optoelectronic and photonic applications. The meeting will help to advance the field through sharing of results, methods, inspiring of new ideas, and initiation of new collaborations. Participation of women scientists and young researchers in engineering will be fostered based on NSF funds to partially cover travel expenses and registration fees.

目的：拟于2013年9月30日至10月5日在德国巴伐利亚州举行的第八届块状氮化物半导体国际研讨会。所要求的1万美元将用于提供旅费和住宿费，或作为最多10名与会者的注册费。智力优势：本次研讨会将汇集专注于开发生长技术的研究人员，并将这些技术应用于电子、光电和光子应用的大块氮化物材料和器件结构的生长。主要专家将介绍大块氮化物生长，性能及其在电子和光电子中的应用领域的最新成就。讲习班的具体目标是确定这些领域仍然存在的重大挑战，并促进建立国际合作，共同努力解决这些挑战。这次会议为业界提供了一个独特的机会，让大家分享最新的科技发展，激发新的想法，学习新的挑战和方向，以及探索/促进新的合作。更广泛的影响：会议旨在汇集来自学术界，政府和工业界的国际研究人员，介绍和评估电子，光电和光子应用的大块氮化物材料和器件结构的当前发展状况。会议将通过分享成果、方法、启发新思想和发起新的合作，帮助推动该领域的发展。美国国家科学基金将利用部分旅费和注册费，鼓励女科学家和青年研究人员参与工程。