DMREF: Search for Magneto-electronic Behavior in Complex Fluoride-based Interfaces

DMREF：寻找复杂氟化物界面中的磁电子行为

• 批准号: 1434897
• 负责人: Aldo Romero
• 金额: $ 120万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-10-01 至 2021-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1434897&HistoricalAwards=false
• 关键词: DMREF; Search; Magneto; electronic; Behavior

NON-TECHNICAL SUMMARYThere is significant interest in multifunctional materials, such as multiferroics, which combine simultaneous responses to electric, magnetic, and strain fields. Potential applications include new power efficient electronics and ultra-fast information processing devices. To date, most of the multiferroics that have been studied are complex oxide materials. Despite the exciting fundamental discoveries emanating from research on these materials, their multiferroic performance is not yet adequate for use in practical applications. In this project, the investigators propose to systematically study complex fluoride materials as alternatives to complex oxides because the different physical origins of the multiferroic effects in fluorides can potentially enhance the multiferroic response. The research will consist of a synergistic collaboration between computational and experimental researchers. The computational effort will predict the most likely materials to have desired multiferroic properties, and the experimental portion will synthesize and characterize the suggested materials. In turn, the experimental results will be used to improve the accuracy of the calculations, which ultimately will lead to an efficient optimization of the design of the new materials.TECHNICAL SUMMARYThe goal of this project is to search for and understand the properties of fluoride-based magnetoelectric multiferroic materials. Recent theoretical work suggests that in ABF3 compounds, ferroelectricity results from the A-site ionic displacement, and not from the magnetic B-site, which should enhance the magnetic response. This is in contrast to many complex oxides, where it is the magnetic ion site that undergoes the displacement, which at the same time tends to weaken the magnetic properties. Moreover, the fluorine ions can lead to large canting in antiferromagnetic structures, again enhancing the magnetoelectric response. There are also indications that interfaces between complex fluorides and other fluorides or oxides should have large and novel magnetoelectric responses. In this project, the properties of complex fluoride compounds and heterostructures will be studied using ab-initio computational techniques, and the most promising materials will be synthesized via molecular beam epitaxy and characterized using scanning probe and optical techniques. The experimental results will be used to improve the approximations used in the computational models. This joint theoretical-experimental effort will efficiently identify the most likely interfaces and materials which have desirable magnetoelectric properties, thus significantly reducing the time necessary for evaluating the vast number of possible material candidates.

非技术概述人们对多功能材料，如多铁性材料，有很大的兴趣，这些材料结合了对电场、磁场和应变场的同时响应的联合收割机。 潜在的应用包括新的节能电子和超快信息处理设备。 迄今为止，已研究的多铁性材料大多是复合氧化物材料。 尽管对这些材料的研究产生了令人兴奋的基本发现，但它们的多铁性性能还不足以用于实际应用。 在这个项目中，研究人员建议系统地研究复杂的氟化物材料作为复杂氧化物的替代品，因为氟化物中多铁性效应的不同物理来源可能会增强多铁性响应。 这项研究将包括计算和实验研究人员之间的协同合作。 计算工作将预测最有可能具有所需多铁性的材料，实验部分将合成和表征所建议的材料。 反过来，实验结果将被用来提高计算的准确性，这最终将导致一个有效的优化设计的新material.Technical summaryThe的目标，这个项目是搜索和了解的性质的氟化物基磁电多铁性材料。 最近的理论工作表明，在ABF3化合物中，铁电性来自A位离子位移，而不是来自磁性B位，这应该会增强磁响应。 这与许多复合氧化物相反，在复合氧化物中，磁性离子位点经历位移，同时倾向于削弱磁性。 此外，氟离子可以导致反铁磁结构中的大倾斜，再次增强磁电响应。 也有迹象表明，复杂的氟化物和其他氟化物或氧化物之间的界面应该有大的和新颖的磁电响应。 在本项目中，将使用从头计算技术研究复杂氟化物化合物和异质结构的性质，并将通过分子束外延合成最有前途的材料，并使用扫描探针和光学技术进行表征。 实验结果将用于改进计算模型中使用的近似。 这种理论和实验的联合努力将有效地识别最可能的界面和具有理想磁电性能的材料，从而大大减少评估大量可能的候选材料所需的时间。

项目成果

Competition of lattice and spin excitations in the temperature dependence of spin-wave properties

自旋波特性温度依赖性中晶格和自旋激发的竞争

• DOI: 10.1103/physrevb.97.214417
• 发表时间: 2018
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Di Gennaro, Marco;Miranda, Alonso L.;Ostler, Thomas A.;Romero, Aldo H.;Verstraete, Matthieu J.
• 通讯作者: Verstraete, Matthieu J.