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STTR Phase I: Self-Calibrating, High Sensitivity, Harsh Environment Gas Sensors

STTR Phase I: Self-Calibrating, High Sensitivity, Harsh Environment Gas Sensors
STTR 第一阶段:自校准、高灵敏度、恶劣环境气体传感器
批准号:
1448861
负责人:
Matthew Erdtmann
金额:
$22.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-01-01 至 2015-12-31

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中文摘要
翻译
该项目更广泛的影响/商业潜力将是解决以半导体和电化学气体传感器为主的低端气体传感器市场与以红外气体传感器为主的高端气体传感器市场之间的差距。增强半导体气体传感器的能力将缩小这一差距,这将扩大其在现有应用中的应用,并颠覆性地开辟新的应用,特别是在成本敏感的工业应用中。这将有助于满足日益增加的政府工作场所安全和排放控制法规对气体传感器的需求。该技术可以普遍应用于占全球市场大部分的气体检测。二氧化碳、氧气、氢气、甲烷和一氧化碳等等?将于第二阶段进一步探讨。该技术还可用于检测生物制剂,如蛋白质、癌细胞或DNA。这个STTR项目将推进现有的电子材料和设备技术,其成果将通过档案期刊文章和会议报告传播。此外,一名西班牙裔研究生将参与该项目,并将有机会花时间在小企业关注和在小企业环境中进行研究。这项小型企业技术转移研究(STTR)第一阶段项目将开发基于增强型AlInN/GaN高电子迁移率晶体管(hemt)的高灵敏度气体传感器,该传感器具有功能化栅极,可在恶劣环境下进行自校准和操作。使用晶格匹配的AlInN消除了iii -氮化物材料中常见的压电极化,特别是在高温下,而使用增强模式(正常关闭)操作可以通过具有零背景信号来实现气体传感器的自校准。虽然对特定气体的灵敏度取决于功能性涂层的选择,但第一阶段的工作将集中在氢气传感器上,目标是实现低于ppm的灵敏度。研究的前半部分致力于优化增强模式AlInN/GaN hemt的材料和器件性能,包括氢敏感性。后半部分的工作是将hemt集成并封装到氢气传感器中,并在恶劣条件下进行测试。如果成功,这项研究将使低成本半导体气体传感器具有新的功能,特别是在恶劣环境应用中。
英文摘要
The broader impact/commercial potential of this project will be to address the gap between the low-end gas sensor market, dominated by semiconductor and electrochemical gas sensors, and the high-end gas sensor market, dominated by infrared gas sensors. Augmenting the capabilities of semiconductor gas sensors will close this gap, which will expand their use in existing applications and disruptively open up new applications, especially in cost-sensitive industrial applications. This will help satisfy the progressive demand for gas sensors driven by increasing government regulations for workplace safety and emission control. The technology can be universally applied for the detection of gases that constitute a majority of the global market?carbon dioxide, oxygen, hydrogen, methane, and carbon monoxide, among others?which will be further explored during Phase II. The technology can also be applied for the detection of biological agents, such as proteins, cancer cells, or DNA. This STTR project will advance existing electronic materials and device technology, whose results will be disseminated through archival journal articles and conference presentations. In addition, a Hispanic graduate student will be participating in the project and will have the opportunity to spend time at the small business concern and conduct research in a small business environment.This Small Business Technology Transfer Research (STTR) Phase I project will develop high sensitivity gas sensors based on enhancement-mode AlInN/GaN high electron mobility transistors (HEMTs) with functionalized gate electrodes to provide for self-calibration and operation in harsh environments. The use of lattice-matched AlInN eliminates the piezoelectric polarization typically found in III-nitride materials, especially at elevated temperatures, while the use of enhancement-mode (normally-off) operation enables self-calibration of the gas sensor by having a zero background signal. While sensitivity to a particular gas is determined by the choice of functional coating, the Phase I effort will focus on hydrogen gas sensors with the goal of achieving sub-ppm sensitivity. The first half of the effort is devoted to optimizing the material and device properties of the enhancement-mode AlInN/GaN HEMTs with respect to hydrogen sensitivity. The second half of the effort is devoted to the integration and packaging of the HEMTs into a hydrogen gas sensor and testing under adverse conditions. If successful, this research will enable new capabilities in low-cost semiconductor gas sensors, especially for harsh environment applications.
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