Heterostructures and Superlattices of Two-Dimensional Layered Materials

二维层状材料的异质结构和超晶格

基本信息

  • 批准号:
    1508144
  • 负责人:
  • 金额:
    $ 36万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2015
  • 资助国家:
    美国
  • 起止时间:
    2015-07-01 至 2018-12-31
  • 项目状态:
    已结题

项目摘要

Nontechnical Description: Two-dimensional layered materials represent a new class of material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up completely new technological opportunities beyond the reach of the existing materials, such as high-speed electronics, ultra-flexible electronics, photodetectors, photovoltaics and novel sensors. This project investigates the fundamental nucleation and growth mechanisms of two-dimensional materials and develops synthetic strategies for the growth of these atomically thin crystals with well-defined boundaries in both lateral and vertical directions. The research is closely integrated with education and outreach activities. The project provides students with educational and training opportunities beyond traditional educational boundaries including developing entrepreneurial skills. The materials and methodologies developed in the research are integrated into graduate and undergraduate courses to broaden the educational experience beyond the PI's laboratory.Technical Description: This project aims to design and synthesize two-dimensional layered materials, their heterostructures and superlattices with a precise control of material parameters including chemical composition, physical dimension, number of atomic layers, and heterostructure interfaces. The project uses in-situ transmission electron microscopy to investigate the nucleation and growth kinetics and develops an atomistic understanding of two-dimensional crystal growth within and between atomic layers. The project also develops a laser-assisted chemical vapor deposition approach for programmable switching of chemical precursors to enable the controlled growth of heterostructures with atomically sharp interfaces. The structural, chemical and electronic modulation of the resulting materials is studied using transmission electron microscopy and scanning tunneling microscopy. In addition, the project investigates the fundamental electronic and optical properties of the resulting materials, and explores their applications for novel electronic and optoelectronic devices.
非技术描述:二维层状材料代表了一类新的材料系统,用于在单原子厚度的极限下探索基础化学和物理学,并有可能开辟现有材料无法实现的全新技术机会,例如高速电子学,超柔性电子学,光电探测器,光电传感器和新型传感器。该项目研究了二维材料的基本成核和生长机制,并为这些在横向和垂直方向上具有明确边界的原子级薄晶体的生长开发了合成策略。研究与教育和外联活动密切结合。该项目为学生提供超越传统教育界限的教育和培训机会,包括发展创业技能。在研究中开发的材料和方法被整合到研究生和本科生课程,以拓宽PI实验室以外的教育经验。技术描述:本项目旨在设计和合成二维层状材料,它们的异质结构和超晶格,并精确控制材料参数,包括化学成分,物理尺寸,原子层数量和异质结构界面。该项目使用原位透射电子显微镜来研究成核和生长动力学,并对原子层内和原子层之间的二维晶体生长进行原子理解。该项目还开发了一种激光辅助化学气相沉积方法,用于化学前体的可编程切换,以实现具有原子级尖锐界面的异质结构的受控生长。使用透射电子显微镜和扫描隧道显微镜研究了所得材料的结构,化学和电子调制。此外,该项目还研究了所得材料的基本电子和光学特性,并探索其在新型电子和光电器件中的应用。

项目成果

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Xiangfeng Duan其他文献

Effect of Ammonia on Preparation of Ammonium Polyphosphate
氨对聚磷酸铵制备的影响
  • DOI:
    10.4028/www.scientific.net/amr.228-229.828
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Gousheng Liu;Xiangfeng Duan
  • 通讯作者:
    Xiangfeng Duan
Interlayer reconstruction phase transition in van der Waals materials
范德华材料中的层间重构相变
  • DOI:
    10.1038/s41563-024-02082-w
  • 发表时间:
    2025-01-24
  • 期刊:
  • 影响因子:
    38.500
  • 作者:
    Junwei Zhang;Laiyuan Wang;Jingtao Lü;Zhe Wang;Huan Wu;Guilin Zhu;Nan Wang;Fei Xue;Xue Zeng;Liu Zhu;Yang Hu;Xia Deng;Chaoshuai Guan;Chen Yang;Zhaoyang Lin;Peiqi Wang;Boxuan Zhou;Jing Lü;Wenguang Zhu;Xixiang Zhang;Yu Huang;Wei Huang;Yong Peng;Xiangfeng Duan
  • 通讯作者:
    Xiangfeng Duan
Interface Capture Effect Printing Atomic‐Thick 2D Semiconductor Thin Films
界面捕获效果打印原子厚 2D 半导体薄膜
  • DOI:
    10.1002/adma.202207392
  • 发表时间:
    2022-09
  • 期刊:
  • 影响因子:
    29.4
  • 作者:
    Lihong Li;Xiaoxia Yu;Zhaoyang Lin;Zhenren Cai;Yawei Cao;Wei Kong;Zhongyuan Xiang;Zhengkun Gu;Xianran Xing;Xiangfeng Duan;Yanlin Song
  • 通讯作者:
    Yanlin Song
Ammonium Polyphosphate Crystalline Transformation from Form II to Form V
聚磷酸铵从II型到V型的晶体转变
  • DOI:
    10.4028/www.scientific.net/amr.228-229.832
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Gousheng Liu;Xiangfeng Duan
  • 通讯作者:
    Xiangfeng Duan
Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures
  • DOI:
    10.1039/c8cs00418h
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
  • 作者:
    Honglai Li;Xiao Wang;Xiaoli Zhu;Xiangfeng Duan;Anlian Pan
  • 通讯作者:
    Anlian Pan

Xiangfeng Duan的其他文献

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{{ truncateString('Xiangfeng Duan', 18)}}的其他基金

Collaborative Research: FuSe: Monolithic 3D Integration (M3D) of 2D Materials-Based CFET Logic Elements towards Advanced Microelectronics
合作研究:FuSe:面向先进微电子学的基于 2D 材料的 CFET 逻辑元件的单片 3D 集成 (M3D)
  • 批准号:
    2329192
  • 财政年份:
    2023
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
Charge Transport and Carrier-Phonon Interactions in Soft Lattice Metal Halide Perovskites
软晶格金属卤化物钙钛矿中的电荷传输和载流子-声子相互作用
  • 批准号:
    2324943
  • 财政年份:
    2023
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
Holey Graphene-Supported Single Metal Atoms as Highly Efficient Electrocatalysts
多孔石墨烯支撑的单金属原子作为高效电催化剂
  • 批准号:
    1800580
  • 财政年份:
    2018
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
A New Design of Nanoscale Optical Voltage Sensors from Plasmonic/Nonlinear-Optical Material Core/Shell Nanoparticles
等离子体/非线性光学材料核/壳纳米粒子纳米级光学电压传感器的新设计
  • 批准号:
    1610361
  • 财政年份:
    2016
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
CAREER: Graphene Nanomesh: Band Gap Engineering in Single Layers of Carbon
职业:石墨烯纳米网:单层碳的带隙工程
  • 批准号:
    0956171
  • 财政年份:
    2010
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant

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