SBIR Phase I: The Quantum FinFET Innovation to Extend Moore's Law: in silico proof-of-concept and performance validation

SBIR 第一阶段：扩展摩尔定律的量子 FinFET 创新：计算机概念验证和性能验证

• 批准号: 1519515
• 负责人: Viktor Koldiaev
• 金额: $ 15万
• 依托单位: FinScale Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-07-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1519515&HistoricalAwards=false
• 关键词: SBIR; Phase; Quantum; FinFET; Innovation

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to address current technology bottlenecks that are slowing advances in semiconductor manufacturing as conventional planar and advanced (FinFET) transistor technologies reach physical limits for scalability. This project seeks to continue Moore's Law and advances the Silicon metal oxide semiconductor field-effect transistor development using a new device architecture. This design may enable more power-efficient electronics to advance high performance computing, computer memory, mobile electronics, and the emerging Internet-Of-Things applications. This Small Business Innovation Research (SBIR) Phase I project will provide successful validation of a new metal oxide semiconductor field-effect transistor (MOSFET) device and manufacturing process can provide a cost-effective proof-of-concept of the underlying device physics. The general challenge in developing nanoscale MOSFETs is that device sizes are comparable to some critical quantum physics material parameters and the channel length is approaching the mean free path of carriers in silicon. This work seeks to validate the devices using Technology Computer Aided Design (TCAD) modeling and simulation tools. Design-of-experiments tables will also be developed to create effective test structures for fabrication in follow-on work. Two-dimensional quantum screening and other critical phenomena not properly modeled in TCAD will be corrected using theoretical methods and experimental data from related research. This project seeks to provide the scientific basis for optimal, manufacturable three-dimensional nanoelectronic devices and characterization of the quantum effects that dominate their operation in the ballistic regime. Phase I will prove/validate device and processing concepts to motivate the fabrication and characterization of devices and test structures.

该小型企业创新研究（SBIR）第一阶段项目的更广泛影响/商业潜力是解决当前技术瓶颈，这些瓶颈正在减缓半导体制造的进步，因为传统的平面和先进（FinFET）晶体管技术达到了可扩展性的物理极限。 本项目旨在继续摩尔定律，并使用新的器件架构推进硅金属氧化物半导体场效应晶体管的开发。 这种设计可以使更节能的电子器件能够推进高性能计算、计算机存储器、移动的电子器件和新兴的物联网应用。 该小型企业创新研究（SBIR）第一阶段项目将成功验证一种新型金属氧化物半导体场效应晶体管（MOSFET）器件，其制造工艺可以为底层器件物理提供具有成本效益的概念验证。开发纳米级MOSFET的一般挑战是器件尺寸与某些关键量子物理材料参数相当，并且沟道长度接近硅中载流子的平均自由程。 这项工作旨在验证设备使用技术计算机辅助设计（TCAD）建模和仿真工具。还将开发实验设计表，以创建有效的测试结构，用于后续工作的制造。二维量子屏蔽和其他临界现象没有正确地模拟在TCAD将被纠正使用理论方法和相关研究的实验数据。该项目旨在为最佳的、可制造的三维纳米电子器件提供科学依据，并表征在弹道体制下主导其运作的量子效应。第一阶段将证明/验证器件和工艺概念，以促进器件和测试结构的制造和表征。