SBIR Phase I: The Quantum FinFET Innovation to Extend Moore's Law: in silico proof-of-concept and performance validation

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力是解决当前阻碍半导体制造进步的技术瓶颈，因为传统的平面和先进的（FinFET）晶体管技术达到了可扩展性的物理极限。该项目旨在继续摩尔定律，并使用新的器件架构推进硅金属氧化物半导体场效应晶体管的开发。这种设计可以使更节能的电子产品推进高性能计算、计算机内存、移动电子产品和新兴的物联网应用。这个小型企业创新研究（SBIR）第一阶段项目将成功验证一种新的金属氧化物半导体场效应晶体管（MOSFET）器件和制造工艺，可以提供一种具有成本效益的底层器件物理概念验证。开发纳米级mosfet的一般挑战是器件尺寸与某些关键量子物理材料参数相当，通道长度接近硅中载流子的平均自由程。这项工作旨在使用技术计算机辅助设计（TCAD）建模和仿真工具验证设备。还将开发实验设计表，以创建有效的测试结构，以便在后续工作中进行制造。二维量子筛选和其他在TCAD中没有正确建模的关键现象将使用相关研究的理论方法和实验数据进行纠正。该项目旨在为最佳的、可制造的三维纳米电子器件和在弹道状态下主导其运行的量子效应的表征提供科学基础。第一阶段将证明/验证设备和处理概念，以激励设备和测试结构的制造和表征。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to address current technology bottlenecks that are slowing advances in semiconductor manufacturing as conventional planar and advanced (FinFET) transistor technologies reach physical limits for scalability. This project seeks to continue Moore's Law and advances the Silicon metal oxide semiconductor field-effect transistor development using a new device architecture. This design may enable more power-efficient electronics to advance high performance computing, computer memory, mobile electronics, and the emerging Internet-Of-Things applications. This Small Business Innovation Research (SBIR) Phase I project will provide successful validation of a new metal oxide semiconductor field-effect transistor (MOSFET) device and manufacturing process can provide a cost-effective proof-of-concept of the underlying device physics. The general challenge in developing nanoscale MOSFETs is that device sizes are comparable to some critical quantum physics material parameters and the channel length is approaching the mean free path of carriers in silicon. This work seeks to validate the devices using Technology Computer Aided Design (TCAD) modeling and simulation tools. Design-of-experiments tables will also be developed to create effective test structures for fabrication in follow-on work. Two-dimensional quantum screening and other critical phenomena not properly modeled in TCAD will be corrected using theoretical methods and experimental data from related research. This project seeks to provide the scientific basis for optimal, manufacturable three-dimensional nanoelectronic devices and characterization of the quantum effects that dominate their operation in the ballistic regime. Phase I will prove/validate device and processing concepts to motivate the fabrication and characterization of devices and test structures.