EAPSI: Experimental Study of an Atomically-Thin, Semiconducting/Metallic Material to Develop Next-Generation Nanotechnology

EAPSI:原子薄半导体/金属材料的实验研究,以开发下一代纳米技术

基本信息

  • 批准号:
    1614303
  • 负责人:
  • 金额:
    $ 0.89万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Fellowship Award
  • 财政年份:
    2016
  • 资助国家:
    美国
  • 起止时间:
    2016-06-01 至 2017-05-31
  • 项目状态:
    已结题

项目摘要

The recent explosion in progress towards realizing atomically thin electronics has resulted from the search for newer fabrication methods, materials, and device operation principles that will advance beyond the physical limits of conventional silicon-based semiconductor technology. Transition metal dichalcogenides (TMDs) have been shown to undergo a structural transformation to produce a metallic state upon transfer of electrons into the pristine semiconducting material. This gives a route towards atomically sharp metal-semiconductor junctions and could enable a new class of efficient, fully 2D integrated circuit technologies. This project will study the structural change mechanism, and manipulation thereof, in atomically thin TMDs using a scanning tunneling microscope (STM). This instrument features an atomically sharp tip that can directly transfer electrons into the material as well as provide structural and electronic information with atomic-scale precision. Stability as a function of temperature will also be studied in order to inform about suitable operating temperatures for devices. The results of this research will deepen our understanding of control over these materials for nano-device fabrication. This work will be done in collaboration with Professor Michael Fuhrer, a leader in experimental physics research of two-dimensional materials, at Monash University in Melbourne, Australia. This project aims to correlate atomic structures with local electronic properties at the metallic-semiconducting interface using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). STM and STS will be done at low temperature in the vicinity of a phase boundary to provide topographical characterization of the local electronic density of states. Then, the effect of controllably injecting electrons into the pristine material or into a phase boundary, with attention being paid to phase boundary migration, phase creation, and changes in electronic state can be studied. Phase boundary migration will also be studied as a function of temperature. This award under the East Asia and Pacific Summer Institutes program supports summer research by a U.S. graduate student and is jointly funded by NSF and the Australian Academy of Science.
最近实现原子级薄电子学的爆炸式发展是由于对更新的制造方法、材料和设备操作原理的探索,这些方法、材料和操作原理将超越传统硅基半导体技术的物理限制。过渡金属二硫族化合物(TMDs)在电子转移到原始半导体材料后发生结构转变,产生金属态。这为原子尖锐的金属-半导体结提供了一条途径,并可能实现一类新的高效、全二维集成电路技术。本项目将利用扫描隧道显微镜(STM)研究原子薄tmd的结构变化机制及其操纵。该仪器具有原子尖的尖端,可以直接将电子转移到材料中,并提供原子尺度精度的结构和电子信息。稳定性作为温度的函数也将被研究,以便告知设备的合适工作温度。这项研究的结果将加深我们对纳米器件制造中这些材料的控制的理解。这项工作将与Michael Fuhrer教授合作完成,他是澳大利亚墨尔本莫纳什大学二维材料实验物理研究的领导者。本项目旨在利用扫描隧道显微镜(STM)和扫描隧道光谱(STS)在金属-半导体界面上将原子结构与局部电子特性联系起来。STM和STS将在相边界附近的低温下进行,以提供状态的局部电子密度的地形特征。然后,可以研究将电子可控地注入原始材料或相边界的效果,并关注相边界的迁移、相的产生和电子状态的变化。相界迁移作为温度的函数也将被研究。该奖项由美国国家科学基金会和澳大利亚科学院共同资助,隶属于东亚和太平洋暑期研究所项目,支持美国研究生进行暑期研究。

项目成果

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