EAGER: Achieving Optoeletronically Perfect Monolayers
EAGER: Achieving Optoeletronically Perfect Monolayers
批准号:
1623038
负责人:
Ali Javey
金额:
$10.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-04-01 至 2017-03-31
中文摘要
翻译后摘要:非技术:二维半导体显示出巨大的潜力,光电应用,由于无数的高度有吸引力的性能,但是,迄今为止,他们已经表现出非常差的光致发光量子产率。高量子产率是用于光电器件(例如发光二极管、激光器和太阳能电池)的材料的要求。这个EAGER项目解决了过渡金属硫属化物(2D材料)的量子产率问题。PI已经证明,MoS 2(2D材料)的表面缺陷可以通过表面化学处理进行修复/钝化。结果,量子产率可以从不到1%提高到95%以上。本EAGER中概述的工作将试图展示基于高量子产率2D monolayer.Technical的功能电光器件:光电系统中使用的材料的品质因数是其光致发光量子产率(QY)。这决定了光或电产生的电子空穴对群体的光发射效率,并且关键取决于材料中的缺陷密度/类型。最终QY值决定了关键性能指标,例如LED的功耗、半导体激光器的阈值电流以及太阳能电池的开路电压上限。二维(2D)半导体具有非常差的量子产率(1%)。最近,PI?的小组已经解决了2D材料中低QY的问题,并开发了一种使用有机超强酸的化学处理程序,该程序能够提高研究最多的2D系统中的QY:实验结果表明,该工艺在室温下稳定,且不改变材料的其他关键性能(如晶体结构、带隙、电学性质等)。需要充分了解治疗的详细机制,以实现其充分的影响。PI将解决其中许多关键问题,重点是:(i)通过探索和优化其他化学品以及优化不同材料的现有处理程序,为其他2D材料(如WS 2和ReS 2)获得高QY。将演示使用该技术的光电器件,特别是具有高QY的2D LED。该项目将涉及一名研究生和一名本科生;特别强调对本科生的培训和指导。拟议工作的性质是跨学科的,涵盖化学、材料科学和器件制造领域。
英文摘要
Abstract:Non-Technical:Two dimensional semiconductors show great promise for optoelectronic applications, due to a myriad of highly attractive properties, however, to date they have shown tremendously poor photoluminescence quantum yield. High quantum yield is a requirement for materials used in optoelectronic devices such as light emitting diodes, lasers, and solar cells. This EAGER project addresses the quantum yield issue of transition metal chalcogenides (2D material). The PI has demonstrated that the surface defects of MoS2 (2D material) can be repaired/passivated through surface chemical treatments. As a result; the quantum yield can be enhanced from less than 1% to over 95%. The work outlined in this EAGER will seek to demonstrate a functional electro-optic device based on a high quantum yield 2D monolayer.Technical:The figure of merit for materials used in optoelectronic systems is their photoluminescence quantum yield (QY). This determines the efficiency of light emission from a population of optically or electrically generated electron hole-pairs and is critically dependent on the defect density/type in the material. Final QY values dictate key performance metrics such as the power consumption in LEDs, threshold currents for semiconductor laser, and the upper limit of open circuit voltage in solar cells. Two dimensional (2D) semiconductors, suffers from very poor quantum yield (1%). Recently the PI?s group has addressed this problem of low QY in 2D materials and developed a chemical treatment procedure using an organic super acid which is able to enhance the QY in the most heavily studied 2D system: MoS2 from an initial value 1% in the as exfoliated case to over 95%.This work shows that the procedure is stable in ambient and does not change other key properties in the material (such as crystal structure, band gap, electrical properties, etc.). The detailed mechanism of the treatment need to be fully understood for this result to realize its full impact. The PI will address many of these key questions, focusing on: (i) obtaining high QY for additional 2D materials such as WS2, and ReS2 via exploring and optimizing additional chemicals and optimizing the existing treatment procedure for different materials. The demonstration of an optoelectronic device using this technology, specifically a 2D LED, with a high QY will be demonstrated.This project will involve one graduate and one undergraduate student; the training and mentoring of the undergraduate student in particular will be emphasized. The nature of the proposed work is interdisciplinary and spans the fields of chemistry, materials science, and device fabrication.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
PFI:AIR - RA: Commercializing a Chem Sensitive FET(CS-FET) Wireless Gas Detection Platform in an Industry/University Ecosystem
-
批准号:1434067
-
项目类别:Standard Grant
-
资助金额:$68.33万
-
财政年份:2014
-
负责人:Ali Javey
-
依托单位:
CAREER: Heterogeneous Integration of Nano-Engineered Materials for High Performance, Flexible Sensor Tapes
-
批准号:0847076
-
项目类别:Standard Grant
-
资助金额:$45.0万
-
财政年份:2009
-
负责人:Ali Javey
-
依托单位:
Nanoscale and Deterministic Doping of Semiconductors Via Molecular Monolayers
-
批准号:0826145
-
项目类别:Standard Grant
-
资助金额:$24.33万
-
财政年份:2008
-
负责人:Ali Javey
-
依托单位:
海外基金