Time- and spatially-resolved optical spectroscopy of MoS2 monolayers

MoS2 单层的时间和空间分辨光谱

• 批准号: 226466488
• 负责人: Professor Dr. Tobias Korn
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2016-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/226466488?language=en
• 关键词: Time; spatially; resolved; optical; spectroscopy

We propose to investigate the properties of monolayers of the compound semiconductor MoS2 using various optical spectroscopy techniques. MoS2, like graphite, is a material with a pronounced layer structure, where individual layers are strongly bound by covalent bounds, while interlayer coupling is mediated by weak van der Waals forces. Bulk MoS2 is an indirect-gap semiconductor. However, it was demonstrated in 2010 that it shows pronounced photoluminescence if it is thinned to a single layer, and DFT calculations predict a direct bandgap for a monolayer. Conduction and valence band states in MoS2 are formed from d-like Mo orbitals, in stark contrast to the s- and p-like states in III-V semiconductors. We want to investigate the band structure of MoS2 using photoluminescence and photoluminescence excitation at low temperatures and in high magnetic fields. A direct consequence of the crystal structure of MoS2 monolayers is the coupling between spin and valley degrees of freedom, which should lead to new opto-electronic effects, such as the Valley Hall effect. We propose to study the carrier, spin and valley dynamics in MoS2 monolayers in time- and spatially-resolved optical experiments in order to observe the predicted effects.

我们建议使用各种光谱技术来研究化合物半导体MoS 2单层的性质。与石墨一样，MoS 2是具有明显层结构的材料，其中各个层通过共价键强烈结合，而层间耦合通过弱货车范德华力介导。块状MoS 2是一种间接带隙半导体。然而，在2010年，它被证明，如果它被减薄到单层，它会显示出明显的光致发光，DFT计算预测单层的直接带隙。 MoS 2中的导带和价带态是由类d的Mo轨道形成的，与III-V族半导体中的类s和类p态形成鲜明对比。我们希望在低温和高磁场下利用光致发光和光致发光激发来研究MoS 2的能带结构。MoS 2单层的晶体结构的直接结果是自旋和谷自由度之间的耦合，这将导致新的光电效应，例如谷霍尔效应。我们建议在时间和空间分辨的光学实验中研究二硫化钼单层中的载流子、自旋和谷动力学，以观察预测的效果。

项目成果

Control of biaxial strain in single-layer molybdenite using local thermal expansion of the substrate

• DOI: 10.1088/2053-1583/2/1/015006
• 发表时间: 2015-03-01
• 期刊: 2D MATERIALS
• 影响因子: 5.5
• 作者: Plechinger, Gerd;Castellanos-Gomez, Andres;Korn, Tobias
• 通讯作者: Korn, Tobias

Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers

• DOI: 10.1088/2053-1583/2/3/034016
• 发表时间: 2015-09
• 期刊: 2D Materials
• 影响因子: 5.5
• 作者: G. Plechinger;F. Mooshammer;A. Castellanos-Gomez;Gary A. Steele;Christian Schüller;T. Korn

Valley dynamics of excitons in monolayer dichalcogenides

• DOI: 10.1002/pssr.201700131
• 发表时间: 2017-05
• 期刊: physica status solidi (RRL) – Rapid Research Letters
• 作者: G. Plechinger;P. Nagler;A. Arora;R. Schmidt;A. Chernikov;J. Lupton;R. Bratschitsch;C. Schüller

A direct comparison of CVD-grown and exfoliated MoS2 using optical spectroscopy

• DOI: 10.1088/0268-1242/29/6/064008
• 发表时间: 2014-06-01
• 期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• 影响因子: 1.9
• 作者: Plechinger, G.;Mann, J.;Korn, T.
• 通讯作者: Korn, T.

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure

• DOI: 10.1088/2053-1583/aa7352
• 发表时间: 2017-06-01
• 期刊: 2D MATERIALS
• 影响因子: 5.5
• 作者: Nagler, Philipp;Plechinger, Gerd;Korn, Tobias
• 通讯作者: Korn, Tobias