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Synthesis of Controlled III-Nitride Nanostructures

受控III族氮化物纳米结构的合成

基本信息

批准号：
1708227
负责人：
Jonathan Wierer
金额：
$ 42万
依托单位：
Lehigh University
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2017
资助国家：
美国
起止时间：
2017-07-01 至 2021-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1708227&HistoricalAwards=false
关键词：
Synthesis Controlled III Nitride Nanostructures

项目摘要

Nontechnical description: This project aims to develop methods for producing advanced nanometer-scale semiconductor materials, called quantum dots. The research effort employs a new synthesis technique to create ensembles of these quantum dots, enabling better control of their size, density and distribution. By controlling the quantum dots characteristics, their properties could be tuned closer to theoretical predictions and desired performance. These new materials are aimed to be used as active components in more efficient electronic devices for applications that positively impact the nation's economy, including solid-state lighting, photovoltaics, visible lasers, high temperature sensors, and ultra-violet light-emitting diodes. The research is incorporated into K-12 education and outreach activities, and is also integrated into graduate and undergraduate courses to broaden the educational experience beyond the laboratory. This project trains two graduate students in the highly important areas of advanced semiconductor materials synthesis, materials characterization, theory, and device technologies.Technical description: The principal goal of this project is to explore synthesis methods to produce monodisperse epitaxial quantum dots in III-Nitride semiconductors. Specifically, this project efforts include: (i) synthesis of quantum dot ensembles using quantum-sized-controlled photoelectrochemical etching, (ii) regrowth of capping layers on top of these quantum dots; (iii) forming p-n junctions with quantum dot active layers, and (iv) characterization of optical properties of the quantum dots and resulting gain, spontaneous emission, and radiative efficiency to established models. These quantum dot ensembles with controlled energy distribution, density, and alloy composition are expected to enable strong quantum effects in III-Nitride semiconductors, addressing various limitations in III-Nitrides by tailoring their bandstructure in order to overcome the Auger recombination, poor radiative efficiencies at longer visible wavelengths, high thresholds in laser diodes, and unfavorable optical polarization in AlGaN ultra-violet emitters.

非技术性描述：该项目旨在开发生产先进的纳米级半导体材料（称为量子点）的方法。这项研究采用了一种新的合成技术来制造这些量子点的集合体，从而能够更好地控制它们的尺寸、密度和分布。通过控制量子点的特性，它们的特性可以更接近理论预测和期望的性能。这些新材料旨在用作更高效电子设备中的有源元件，用于对国家经济产生积极影响的应用，包括固态照明，光电子学，可见光激光器，高温传感器和紫外线发光二极管。该研究被纳入K-12教育和推广活动，并被纳入研究生和本科课程，以扩大实验室以外的教育经验。本项目培养了两名研究生，他们的研究领域是先进半导体材料合成、材料表征、理论和器件技术。技术描述：本项目的主要目标是探索在III族氮化物半导体中制备单分散外延量子点的合成方法。具体而言，该项目的工作包括：（i）使用量子尺寸控制的光电化学蚀刻合成量子点整体，（ii）在这些量子点顶部再生长覆盖层;（iii）与量子点有源层形成p-n结，以及（iv）表征量子点的光学特性和所得增益，自发发射和辐射效率。这些具有受控的能量分布、密度和合金组成的量子点系综预计能够在III族氮化物半导体中实现强量子效应，通过定制它们的能带结构来解决III族氮化物中的各种限制，以便克服俄歇复合、较长可见波长下的差辐射效率、激光二极管中的高阈值以及AlGaN紫外发射器中的不利光学偏振。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Band Anti-Crossing Model in Dilute-As GaNAs Alloys

稀砷 GaN 合金中的能带反交叉模型

DOI：
10.1038/s41598-019-41286-y
发表时间：
2019
期刊：
Scientific Reports
影响因子：
4.6
作者：
Goodrich, Justin C.;Borovac, Damir;Tan, Chee-Keong;Tansu, Nelson
通讯作者：
Tansu, Nelson

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

DOI：
10.1063/1.5028257
发表时间：
2018-05
期刊：
Applied Physics Letters
影响因子：
4
作者：
Wei‐Che Sun;Syed Ahmed Al Muyeed;Renbo Song;Jonathan J. Wierer;N. Tansu
通讯作者：
Wei‐Che Sun;Syed Ahmed Al Muyeed;Renbo Song;Jonathan J. Wierer;N. Tansu

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

用于 III 族氮化物电子和光电器件的 AlInN 热氧化

DOI：
10.1021/acsaelm.9b00266
发表时间：
2019
期刊：
ACS Applied Electronic Materials
影响因子：
4.7
作者：
Peart, Matthew R.;Wei, Xiongliang;Borovac, Damir;Sun, Wei;Tansu, Nelson;Wierer, Jonathan J.
通讯作者：
Wierer, Jonathan J.

Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers