Collaborative Research: Harnessing Crystalline Phase Transition in 2D Materials for Ultra-Low-Power and Flexible Electronics

合作研究：利用二维材料中的晶体相变实现超低功耗和柔性电子产品

• 批准号: 1809770
• 负责人: Jing Guo
• 金额: $ 19.35万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-08-01 至 2022-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1809770&HistoricalAwards=false
• 关键词: Collaborative; Research; Harnessing; Crystalline; Phase

Rapid advances in wearable electronics and mobile device technologies have made it crucial and imperative to explore and demonstrate new semiconductor devices with ultralow-power, fast speed, small size, and flexible mechanical properties. Atomic layer semiconductors and their two-dimensional nanostructures isolated from bulk, layered transition metal dichalcogenide crystals are promising for many applications in nanoelectronics, nanophotonics, and nanoelectromechanical systems, due to their unconventional and exceptional electrical, optical and mechanical properties. Controlled crystalline phase transition, which occurs in certain atomic layer semiconductor materials, and its accompanying semiconductor-to-metal transition, have the potential to eventually lead to important device and circuit applications that permit advanced computing, memory, and sensing with ultralow power consumption. This project combines experimental, theoretical, and simulation approaches to explore, model, and demonstrate a new class of atomically thin, mechanically flexible electronic devices based on the mechanisms of controlled crystalline phase transition in atomic layer semiconductors. The ultralow power and mechanical flexible properties of the devices based on phase transition in atomically thin semiconductors materials make them attractive in future flexible electronics, internet-of-things, and computer technologies. In this project, the PIs will develop and disseminate course modules and simulation tools, and timely employ the research activities to recruit and broaden participation from underrepresented students from high school to graduate student levels, at both Case Western Reserve University and University of Florida. The goals of this collaborative research project are to develop the essential knowledge base for, and to pave the way toward, understanding and harvesting gate-voltage and strain-controlled crystalline phase transition in two-dimensional transition metal dichalcogenide materials for ultralow-power switching devices and flexible electronics applications. The proposed research activities include: (i) Develop a computationally efficient and physically meaningful multiscale simulation platform to simulate crystalline phase transition phenomena in transition metal dichalcogenide crystals induced by a gate voltage or strain; (ii) Experimentally explore strain and gate-voltage-induced phase transition in transition metal dichalcogenide materials; (iii) Couple experimental characterization of the crystalline phase transition in transition metal dichalcogenide devices with theoretical work to develop phase transition flexible electronics and switching devices; (iv) Engineer the phase-transition switch mechanisms in rationally designed device platforms, to achieve steep sub-threshold slope and ultralow-power logic switches. This experiment-theory collaborative team will use advanced nanodevice fabrication, characterization, modeling and simulation techniques to explore and understand how phase transition in transition metal dichalcogenide materials can be tailored, controlled, and utilized for ultralow power and flexible electronics applications. The study will deepen fundamental understanding of phase change phenomena in atomic layer semiconductors, and develop promising device concepts and models to harness gate-voltage and strain-controlled crystalline phase transition in atomically thin semiconductors, to enable future devices and systems for computing, sensing, and communication.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

可穿戴电子和移动终端技术的快速发展使得开发和展示具有超低功率、快速、小尺寸和灵活机械性能的新型半导体器件变得至关重要。原子层半导体及其与块状层状过渡金属二硫属化物晶体分离的二维纳米结构由于其非常规的和特殊的电学、光学和机械性质而在纳米电子学、纳米光子学和纳米机电系统中具有许多应用前景。在某些原子层半导体材料中发生的受控结晶相变及其伴随的半导体到金属的转变，有可能最终导致重要的器件和电路应用，这些应用允许以超低功耗进行高级计算、存储器和感测。该项目结合了实验，理论和模拟方法，探索，建模和展示了一类新的原子薄，机械柔性电子器件的基础上，在原子层半导体控制结晶相变的机制。基于原子级薄半导体材料相变的器件的超低功率和机械柔性特性使它们在未来的柔性电子、物联网和计算机技术中具有吸引力。在该项目中，项目执行员将开发和传播课程模块和模拟工具，并及时开展研究活动，以招募和扩大凯斯西储大学和佛罗里达大学从高中到研究生水平的代表性不足的学生的参与。这个合作研究项目的目标是开发必要的知识基础，并铺平道路，理解和收获二维过渡金属二硫属化物材料的栅电压和应变控制的结晶相变，用于超低功率开关器件和柔性电子应用。拟议的研究活动包括：（一）开发一个计算效率高、物理意义大的多尺度模拟平台，以模拟栅极电压或应变引起的过渡金属二硫属化物晶体中的晶体相变现象;（二）实验探索过渡金属二硫属化物材料中的应变和栅极电压引起的相变; ㈢将过渡金属二硫属化物器件中晶体相变的实验表征与理论工作结合起来，以开发相变柔性电子器件和开关器件;（iv）在合理设计的器件平台中设计相变开关机制，以实现陡峭的亚阈值斜率和超低功率逻辑开关。这个实验理论合作团队将使用先进的纳米器件制造，表征，建模和模拟技术来探索和理解过渡金属二硫属化物材料的相变如何被定制，控制和用于超低功耗和灵活的电子应用。该研究将加深对原子层半导体相变现象的基本理解，并开发有前途的器件概念和模型，以利用原子薄半导体中的栅极电压和应变控制结晶相变，使未来的器件和系统能够用于计算，传感，该奖项反映了NSF的法定使命，并通过使用基金会的智力价值进行评估，被认为值得支持和更广泛的影响审查标准。

项目成果

Phase Transition of MoTe 2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems

范德华异质结构纳米机电系统中 MoTe 2 相变的控制

• DOI: 10.1002/smll.202205327
• 发表时间: 2022
• 期刊: Small
• 影响因子: 13.3
• 作者: Ye, Fan;Islam, Arnob;Wang, Yanan;Guo, Jing;Feng, Philip X. ‐L.
• 通讯作者: Feng, Philip X. ‐L.

Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes

• DOI: 10.1038/s41928-021-00633-6
• 发表时间: 2021-09-06
• 期刊: NATURE ELECTRONICS
• 影响因子: 34.3
• 作者: Chen, Changxin;Lin, Yu;Dai, Hongjie
• 通讯作者: Dai, Hongjie

Compact Model of Carrier Transport in Monolayer Transition Metal Dichalcogenide Transistors

• DOI: 10.1109/ted.2018.2866095
• 发表时间: 2019
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Tong Wu;Xi Cao;Jing Guo

Speed Up Quantum Transport Device Simulation on Ferroelectric Tunnel Junction With Machine Learning Methods

利用机器学习方法加速铁电隧道结的量子传输装置模拟

• DOI: 10.1109/ted.2020.3025982
• 发表时间: 2020
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Wu, Tong;Guo, Jing
• 通讯作者: Guo, Jing

Performance Potential of 2D Kagome Lattice Interconnects

• DOI: 10.1109/led.2019.2947285
• 发表时间: 2019-12
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Tong Wu