SBIR Phase I: Manufacturable Growth And Purification Of Aligned, Semiconducting Carbon Nanotubes

SBIR 第一阶段：定向半导体碳纳米管的可制造生长和纯化

• 批准号: 1844111
• 负责人: John Provine
• 金额: $ 22.5万
• 依托单位: ALIGNED CARBON INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-02-01 至 2020-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1844111&HistoricalAwards=false
• 关键词: SBIR; Phase; Manufacturable; Growth; Purification

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to enable the development of monolithic 3D integration of carbon nanotube (CNT) computing in conjunction with silicon nanoelectronics. The value of nanoelectronics utilizing silicon integrated with CNT has been shown to have immense potential through various academic studies. However, the transition of this technology from academia to industry has been stymied by lack of CNT material that meets the manufacturing requirements particularly in terms of alignment, purity, and compatibility to be properly explored. Monolithic 3D integration will enable game-changing levels of improvement to computing speed and power efficiency, creating better computing for all. Providing a material which accelerates research and development for improved computing will create a game changing impact on the $500B integrated circuit market and potentially create billions of dollars in revenue. This project is focused on the needs of the nanoelectronics industry because of the impact possible in that market, but other markets such as biosensing or flexible electronics would benefit from the same materials and often at relaxed specifications.This Small Business Innovation Research Phase I project will greatly expand the utilization of carbon nanotubes (CNTs) in nanoelectronics by making industrially relevant material available. This will allow application oriented nanoelectronics teams to move forward with R&D projects. Further, the project's work on the fundamentals of aligned CNT growth and purification will benefit the CNT materials community by the extension of the material into commercial manufacturing. The research objectives are on two fronts: 1) growth of CMOS compatible aligned CNTs and 2) purification of aligned CNTs. Growth of highly aligned CNT populations has typically utilized catalysts which are not compatible with front end of line CMOS fabrication, hindering the use of material in conjunction with Si integrated circuits. Current methods of CNT purification to remove metallic CNTs suffer from either destroying the critical CNT alignment, utilization of non-CMOS compatible materials, or the need of extensive post-processing. This project will develop a growth process and a purification process that preserves alignment while maintaining CMOS compatibility and utilizes wafer scale batch processes that allow high throughput manufacturing. The purification scheme is a proprietary method which must be characterized and refined to meet the exacting purification standards of 99.99% semiconducting CNTs or better.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力是使碳纳米管（CNT）计算的单片3D集成与硅纳米电子学的发展成为可能。利用硅与碳纳米管集成的纳米电子学价值已通过各种学术研究显示出巨大的潜力。然而，由于缺乏满足制造要求的碳纳米管材料，特别是在校准、纯度和兼容性方面需要适当探索，这项技术从学术界向工业的过渡一直受到阻碍。单片3D集成将使计算速度和功率效率的改进达到改变游戏规则的水平，为所有人创造更好的计算。提供一种加速改进计算的研究和开发的材料，将对5000亿美元的集成电路市场产生改变游戏规则的影响，并可能创造数十亿美元的收入。这个项目的重点是纳米电子工业的需求，因为它可能对该市场产生影响，但其他市场，如生物传感或柔性电子产品，将受益于相同的材料，通常是宽松的规格。这个小企业创新研究第一阶段项目将通过提供工业相关材料，极大地扩大碳纳米管（CNTs）在纳米电子学中的应用。这将允许面向应用的纳米电子学团队推进研发项目。此外，该项目关于碳纳米管生长和净化基本原理的工作将通过将碳纳米管材料扩展到商业制造中，使碳纳米管材料社区受益。研究目标在两个方面：1)生长CMOS兼容的排列CNTs和2)纯化排列CNTs。高度排列的碳纳米管群体的生长通常使用的催化剂与前端CMOS制造不兼容，阻碍了材料与Si集成电路的结合使用。目前的碳纳米管纯化去除金属碳纳米管的方法要么破坏关键的碳纳米管对准，要么使用非cmos相容材料，要么需要大量的后处理。该项目将开发一种生长工艺和纯化工艺，在保持CMOS兼容性的同时保持校准，并利用圆片规模的批量工艺，实现高吞吐量制造。该纯化方案是一种专有方法，必须进行表征和改进，以满足99.99%或更高的半导体碳纳米管的严格纯化标准。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。