CAREER: Thermal stability and scaling of nanoscale spin-electronic devices based on novel inverse-Heusler alloys

从智能手机到笔记本电脑，许多高科技产品都采用了纳米级电子开关，其功能完全依赖于电子的电荷特性。电子还有另一种固有特性，称为自旋，直观上类似于旋转的电荷球。在自旋电子学领域，人们利用电子的自旋特性来制造新的器件。例如，磁硬盘驱动器中的读头传感器是自旋电子器件。 自旋电子学的下一个技术步骤是实现自旋开关，与基于电荷的技术相比，非挥发性的附加好处将是新颖的。但是，一些性能相关的参数需要显着改善，以实现纳米自旋开关具有长寿命和高能量效率。一种方法是修改自旋电子器件内部的材料组分以应对挑战。这就是研究计划的目标。几种预先确定的新型磁性材料及其组合将使用薄膜生长和纳米级器件制造技术在先进的自旋电子器件中实现。纳米级自旋器件将表征其开关，缩放，能效和速度特性，以测试材料的可行性。研究计划的成功实施有可能带来高回报，并导致节能的自旋器件。几个研究生，本科生和高中生的基础广泛的培训和教育将在材料，器件物理和器件设计，制造和表征完成。该计划将积极致力于促进本科生和当地高中生对科学，技术和工程学科的兴趣，通过在当地伊利诺伊州南部地区的几个协同推广工作。自旋电子学被认为是一种有前途的技术，以解决当前半导体器件的缩放问题。 在紧急自旋转移力矩随机存取存储器中，除了开/关比之外，诸如热稳定性和开关电流密度之类的参数对于这种技术在20 nm节点以下是可行的是重要的。在本提案中，将在自旋器件配置中研究几种新材料组合，以直接解决自旋电子学技术的挑战性问题。 几种具有垂直磁各向异性和高自旋极化的逆赫斯勒磁性材料将被研究。磁性隧道结和自旋转移力矩器件将被设计、制造和测试其开/关比、开关电流/效率和热稳定性。在初始阶段，将在微米级器件上测试隧道磁阻特性，以确定各种材料组合的可行性。在该项目的第二阶段，将对器件进行低于20纳米水平的测试，以研究所有相关参数的缩放行为。将使用形状各向异性对设备几何结构中的自旋进行纳米级操纵。基本磁性的协同界面表征将在各种国家实验室设施使用同步辐射完成。项目目标的成功实施可以使自旋电子学技术更好地集成到当前的半导体器件中。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Many high-tech gadgets from smartphones to laptops employ nanoscale electronic switches for their functionality that rely exclusively on the charge property of the electron. The electron also has another intrinsic property, called spin, which is intuitively analogous to a spinning ball of charge. In the area of spin-electronics, or spintronics, the spin property of electron is exploited to make new devices. For example, the read-head sensor in magnetic hard-disk drives is a spintronic device. The next technology step for spintronics is to realize a spin-switch where the added benefit of non-volatility will be novel compared to charge-based technologies. But several performance-related parameters require significant improvement in order to achieve a nanoscale spin-switch with long lifetime and high energy-efficiency. One approach is to modify the material components inside spintronic devices to address the challenges. Such is the objective of the research plan. Several pre-identified novel magnetic materials and their combinations will be implemented in an advanced spintronic device using thin-film growth and nanoscale device fabrication techniques. The nanoscale spin devices will be characterized for their switching, scaling, energy-efficiency, and speed characteristics to test the feasibility of the materials. Successful implementation of the research plan has the potential for a high payoff and lead to energy-efficient spin-devices. A broad-based training and education of several graduate, undergraduate, and high school students will be accomplished in materials, device physics and device design, fabrication and characterization. The program will actively focus on promoting interest in science, technology and engineering disciplines among undergraduates and local high school students through several synergistic outreach efforts within the local southern Illinois area.Spintronics is recognized as a promising technology to address the scaling problems of current semiconductor devices. In emergent Spin-Transfer Torque Random-Access Memory, parameters such as thermal stability and switching current density, in addition to ON/OFF ratio, are important for such technologies to be viable below the 20 nm node. In this proposal, several new material combinations will be investigated in spin device configurations to directly address the challenging issues of spintronics technology. Several inverse-Heuslers magnetic materials that show perpendicular magnetic anisotropy and high spin-polarization will be investigated. Magnetic Tunnel Junction and Spin-transfer Torque devices will be designed, fabricated and tested for their ON/OFF ratio, switching current/efficiency, and thermal stability. In the initial phase, the tunnel magnetoresistance properties will be tested on micron-scale devices to establish the viability of the various materials combinations. In the second phase of the project, devices will be tested down to sub-20 nm level to investigate the scaling behavior of all relevant parameters. Nanoscale manipulation of spins in a device geometry will be conducted using shape anisotropy. Synergistic interface characterization of fundamental magnetic properties will be accomplished using synchrotron radiation at various national lab facilities. Successful implementation of project goals can lead to greater integration of spintronics technologies into current semiconductor devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.