REU Site: Scalable Nanomanufacturing of Complex Materials

REU 网站:复杂材料的可扩展纳米制造

基本信息

项目摘要

This Research Experience for Undergraduates (REU) Site, Scalable Nanomanufacturing of Complex Materials, hosted by Penn State University, University Park, provides a diverse cohort of undergraduate students with an opportunity to work on next generation materials and devices that will underpin the future of microelectronics research and also participate in a focused professional development and mentoring program. As industry projects the end of Moore's law in terms of device scaling, "More than Moore" approaches which utilize new materials to enable new functionalities will become increasingly critical. This REU site will enable ten students annually to work in the field of advanced nanomanufacturing in state-of-the-art user facilities. Emphasis will be placed on developing processes and models for deposition and patterning of emerging materials with complex chemistries that change the available palette of functions for semiconductors, sensors, and actuators. The program builds on Penn State expertise in the areas of two-dimensional chalcogenides for applications in next generation electronics as well as integrated piezoelectrics and pyroelectrics. While the materials described above are interesting in and of themselves, combinations of these two classes of materials: the 2D chalcogenides and high strain piezoelectrics based on complex oxides should enable low power computation for wearable devices and the Internet of Things, CMOS-compatible actuation voltages for miniaturized medical ultrasound transducers, adjustable optics, self-powered sensors, conformable electronics, and RF electronics. This REU program is hosted by the co-located Penn State Nanofabrication facility and the 2D Crystal Consortium- Materials Innovation Platform facility, whose faculty, students, and staff will work with a diverse cohort of ten undergraduate students annually selected from institutions across the nation to conduct research in the field of heterogeneous integration of complex materials in a nanomanufacturing environment. Long-term skills imparted will include the development and testing of a scientific hypothesis, practice in oral and written scientific communication, and management of scientific data. Through engagement with industry partners, the REU participants will gain perspective on research career pathways beyond academia and be exposed to the organization and operational infrastructure of an industrial research facility in industrial R&D, manufacturing and management. Students will be paired with faculty and trained graduate student mentors in an environment for which the team has a long track record of success in recruiting and inspiring diverse undergraduate populations. Special recruitment efforts will be made to encourage applicants from academic institutions where research programs are limited, female students, students with disabilities, students who are veterans of the U.S. Armed Services and underrepresented minority students.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这个本科生研究经验(REU)网站,复杂材料的可扩展纳米制造,由宾夕法尼亚州立大学大学公园主办,为不同的本科生提供了一个研究下一代材料和设备的机会,这些材料和设备将支持微电子研究的未来,并参与重点专业发展和指导计划。随着行业预测摩尔定律在设备规模方面的终结,利用新材料实现新功能的“超越摩尔”方法将变得越来越重要。该REU站点每年将使10名学生能够在最先进的用户设施中从事先进纳米制造领域的工作。重点将放在开发工艺和模型的沉积和图案的新兴材料与复杂的化学,改变可用的调色板的半导体,传感器和执行器的功能。该项目建立在宾夕法尼亚州立大学在二维硫族化合物领域的专业知识基础上,用于下一代电子产品以及集成压电和热释电。虽然上述材料本身很有趣,但这两类材料的组合:2D硫族化合物和基于复杂氧化物的高应变压电材料,应该能够实现可穿戴设备和物联网的低功耗计算,小型化医疗超声换能器的cmos兼容驱动电压,可调光学,自供电传感器,兼容电子器件和射频电子器件。该REU项目由宾夕法尼亚州立大学纳米制造设施和2D晶体联盟-材料创新平台设施共同主办,其教师,学生和工作人员将与每年从全国各地的机构中选出的10名本科生合作,在纳米制造环境中进行复杂材料异质集成领域的研究。传授的长期技能将包括科学假设的发展和检验、口头和书面科学交流的实践以及科学数据的管理。通过与行业合作伙伴的接触,REU的参与者将获得学术界以外的研究职业道路的视角,并接触到工业研发、制造和管理方面的工业研究设施的组织和运营基础设施。学生将与教师和训练有素的研究生导师配对,在一个团队在招聘和激励多样化本科生群体方面有着长期成功记录的环境中。将特别努力,鼓励来自研究项目有限的学术机构、女学生、残疾学生、美国武装部队退伍军人和少数族裔学生的申请者。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

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Susan Trolier-McKinstry其他文献

Proximity ferroelectricity in wurtzite heterostructures
纤锌矿异质结构中的近程铁电性
  • DOI:
    10.1038/s41586-024-08295-y
  • 发表时间:
    2025-01-08
  • 期刊:
  • 影响因子:
    48.500
  • 作者:
    Chloe H. Skidmore;R. Jackson Spurling;John Hayden;Steven M. Baksa;Drew Behrendt;Devin Goodling;Joshua L. Nordlander;Albert Suceava;Joseph Casamento;Betul Akkopru-Akgun;Sebastian Calderon;Ismaila Dabo;Venkatraman Gopalan;Kyle P. Kelley;Andrew M. Rappe;Susan Trolier-McKinstry;Elizabeth C. Dickey;Jon-Paul Maria
  • 通讯作者:
    Jon-Paul Maria
Annealing behavior and electrical properties of atomic layer deposited PbTiO<sub>3</sub> and PZT films
  • DOI:
    10.1016/j.jcrysgro.2018.04.004
  • 发表时间:
    2018-07-01
  • 期刊:
  • 影响因子:
  • 作者:
    Jung In Yang;Aaron Welsh;Nick M. Sbrockey;Gary S. Tompa;Ronald G. Polcawich;Daniel M. Potrepka;Susan Trolier-McKinstry
  • 通讯作者:
    Susan Trolier-McKinstry
The impacts of publication
  • DOI:
    10.1557/mrs.2017.146
  • 发表时间:
    2017-07-10
  • 期刊:
  • 影响因子:
    4.900
  • 作者:
    Susan Trolier-McKinstry
  • 通讯作者:
    Susan Trolier-McKinstry
Chemical solution deposited silver tantalate niobate, Ag x (Ta0.5Nb0.5)O3−y , thin films on (111)Pt/Ti/SiO2/(100)Si substrates
  • DOI:
    10.1007/s10971-006-0204-8
  • 发表时间:
    2006-10-17
  • 期刊:
  • 影响因子:
    3.200
  • 作者:
    Mustafa Burak Telli;Susan Trolier-McKinstry;David Ian Woodward;Ian Michael Reaney
  • 通讯作者:
    Ian Michael Reaney
Ultraviolet pulsed laser crystallization of Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3</sub> films on LaNiO<sub>3</sub>-coated silicon substrates
  • DOI:
    10.1016/j.ceramint.2015.11.075
  • 发表时间:
    2016-02-15
  • 期刊:
  • 影响因子:
  • 作者:
    Albert Queraltó;Angel Pérez del Pino;María de la Mata;Mar Tristany;Xavier Obradors;Teresa Puig;Susan Trolier-McKinstry
  • 通讯作者:
    Susan Trolier-McKinstry

Susan Trolier-McKinstry的其他文献

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{{ truncateString('Susan Trolier-McKinstry', 18)}}的其他基金

Collaborative Research: Space Charge Induced Flexoelectric (SCIF) Transducers: A New Technology to Eliminate the Environmental Cost of Leaded Piezoelectric Transducers
合作研究:空间电荷感应柔性 (SCIF) 传感器:消除含铅压电传感器环境成本的新技术
  • 批准号:
    2247454
  • 财政年份:
    2023
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
Domain Boundary - Grain Boundary Interactions in Ferroelectrics
域边界 - 铁电体中的晶界相互作用
  • 批准号:
    2025439
  • 财政年份:
    2020
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant
Phase II IUCRC at The Pennsylvania State University: Center for Dielectrics and Piezoelectrics: CDP
宾夕法尼亚州立大学 IUCRC 第二阶段:电介质和压电中心:CDP
  • 批准号:
    1841453
  • 财政年份:
    2019
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant
CPS: Synergy: Collaborative Research: Towards Dependable Self-Powered Things for the IoT
CPS:协同:协作研究:为物联网打造可靠的自供电事物
  • 批准号:
    1646399
  • 财政年份:
    2016
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
Collaborative Research: Extrinsic Size Effects in Ferroelectric Thin Films
合作研究:铁电薄膜的外在尺寸效应
  • 批准号:
    1410907
  • 财政年份:
    2014
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant
I/UCRC: Multi-university I/UCRC for Dielectrics and Piezoelectrics
I/UCRC:多所大学 I/UCRC 电介质和压电材料
  • 批准号:
    1361571
  • 财政年份:
    2014
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant
Probing Local Origins of Nonlinearity in Ferroelectric Films
探究铁电薄膜非线性的局部起源
  • 批准号:
    1005771
  • 财政年份:
    2010
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant
Materials World Network: Effects of Constraints and Thickness on Perovskite Ferroeoectrics Undergoing Tilt Transitions
材料世界网络:约束和厚度对发生倾斜转变的钙钛矿铁电体的影响
  • 批准号:
    0602770
  • 财政年份:
    2006
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant
High Piezoelectric Coefficient Ferroelectric Films for MEMS Applications
用于 MEMS 应用的高压电系数铁电薄膜
  • 批准号:
    0102808
  • 财政年份:
    2001
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
CAREER: Property Tailoring and Reliability in Ferroic Film Actuators
职业:铁质薄膜执行器的特性定制和可靠性
  • 批准号:
    9502431
  • 财政年份:
    1995
  • 资助金额:
    $ 36万
  • 项目类别:
    Continuing Grant

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REU Site: Microbial Biofilm Development, Resistance, & Community Structure
REU 网站:微生物生物膜的发展、耐药性、
  • 批准号:
    2349311
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CC* 网络基础设施:YinzerNet:多站点数据和人工智能驱动的研究网络
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