Thin films based on topological Heusler materials

基于拓扑赫斯勒材料的薄膜

• 批准号: 237534161
• 负责人: Dr. Stanislav Chadov
• 金额: --
• 依托单位: Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/237534161?language=en
• 关键词: Thin; films; based; topological; Heusler

The long term goal of our combined proposal is to bring the developing research field of topological insulators closer to the real-life applications by producing the compounds, which can be applied in spintronics engineering. This goal implies a three-level collaboration between theory/characterization of suitable materials, growing thin films with optimized transport properties, and finally producing the combined devices. Our basic material source will be the family of cubic semiconducting Heusler compounds in which the first topologically-nontrivial systems were already identified. The Heusler family is one of the most studied diverse materials classes with many well-understood properties and long history in spintronics applications. The ab-initio analysis will be applied to select the suitable candidates. Here, materials with optimized properties for further thin films production are in the center of the work. Special effort will be put on the effects of disorder which often occur in multicomponent systems. Finally, advanced calculations will be performed to obtain their spectral and transport properties within the realistic surface and hetero-structure setup. This information will be necessary to guide the experimental part of the project, i.e. a high-quality growth of the thin films and their optimization with respect to the most important criteria: the stabilization of the Dirac surface states at the Fermi energy, optimal doping (most of the Heusler semiconductors are intrinsically p-doped), low carrier density and high mobility.All project co-partners have long-term experience by working with Heusler materials in theory, growth of thin films and production of combined hetero-structures for devices such as tunnel junctions. Being efficiently combined together this guarantees the success of our ambitious goal of developing new compounds for topological insulators, the realization in thin films and devices.

我们的联合提案的长期目标是通过生产可应用于自旋电子学工程的化合物，使发展中的拓扑绝缘体研究领域更接近现实生活中的应用。这一目标意味着合适材料的理论/表征，生长具有优化传输特性的薄膜，以及最终生产组合器件之间的三级合作。我们的基本材料来源将是立方半导体Heusler化合物的家庭，其中第一个拓扑非平凡系统已经确定。Heusler家族是研究最多的不同材料类别之一，具有许多众所周知的特性和在自旋电子学应用中的悠久历史。将应用从头算分析来选择合适的候选物。在这里，具有优化性能的材料用于进一步的薄膜生产是工作的中心。特别的努力将放在无序的影响，经常发生在多组分系统。最后，将进行高级计算，以获得其光谱和传输特性的现实表面和异质结构设置。这些信息对于指导该项目的实验部分是必要的，即薄膜的高质量生长及其在最重要标准方面的优化：狄拉克表面态在费米能级的稳定化，最佳掺杂（大多数Heusler半导体本质上是p掺杂的），低载流子密度和高迁移率。所有项目合作伙伴都在理论、薄膜生长和隧道结等器件的组合异质结构生产方面拥有与Heusler材料合作的长期经验。有效地结合在一起，这保证了我们开发拓扑绝缘体新化合物的宏伟目标的成功，并在薄膜和器件中实现。