Collaborative Research: A search for novel efficient p-type nitride materials

合作研究：寻找新型高效p型氮化物材料

• 批准号: 1904861
• 负责人: Michael Reshchikov
• 金额: $ 24.5万
• 依托单位: Virginia Commonwealth University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1904861&HistoricalAwards=false
• 关键词: Collaborative; Research; search; novel; efficient

Non-technical Description: Gallium nitride (GaN) semiconductor is a key component in bright light-emitting diodes (LEDs) used in solid-state lighting and other electronics applications. Most of these devices rely on so-called p-type GaN, a material with added impurities, which greatly improve its properties. In addition, exciting opportunities in optoelectronics currently emerge in development of a related material, p-type AlGaN. This is potentially groundbreaking since it will pave the way toward bright ultraviolet (UV) LEDs that can be used in numerous energy efficient applications, including air and water purification, phototherapy, gas sensing, plant growth lighting, and UV curing. The integrated experiment/theory research project is aimed at realizing new efficient conductive p-type GaN and AlGaN semiconductor materials. Adding beryllium (Be) impurity to GaN and AlGaN is expected to result in significantly improved p-type conductivity of these materials, leading to dramatic improvement of UV LED efficiency. Students, including those from underrepresented groups, have the opportunity to gain hands-on experience with state-of-the-art material deposition, optical spectroscopy experiments, and theoretical calculations. The project also builds a strong foundation for research and education in a relatively small Physics Department at Virginia Commonwealth University. Technical Description: The project focuses on growth of Be-doped GaN and AlGaN and fundamental studies of point defects in these materials. Analysis of photoluminescence from Be-doped GaN indicates that Be is the shallowest acceptor in GaN, yet achievement of p-type conductivity is still a challenging task, because a variety of point defects are formed during material growth. This collaborative research involves first-principles calculations of microscopic properties of Be and related defects in GaN and AlGaN, growth of Be-doped GaN and AlGaN by metalorganic chemical vapor deposition method, use of ion implantation, thermal annealing, and detailed experimental studies, primarily with photoluminescence and Kelvin probe methods. The roles of growth conditions (temperature, pressure, gas ambient), co-doping with Si and Mg, delta doping techniques, use of surfactants, various thermal annealing approaches are investigated to achieve conductive p-type materials. An in-depth and comprehensive study of the properties and behavior of Be and other defects in GaN and AlGaN by using advanced experimental and theoretical approaches is essential to gain a basic understanding of point defects in semiconductors, the mechanisms of radiative and nonradiative recombination, and possible growth pathways for realizing the efficient p-type materials. Furthermore, the accuracy of current approaches in solid-state theory is critically examined through direct experimental verification.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：氮化镓（GaN）半导体是固态照明和其他电子应用中使用的明亮发光二极管（LED）的关键组件。这些器件中的大多数依赖于所谓的p型GaN，这是一种添加了杂质的材料，大大提高了其性能。此外，光电子领域的令人兴奋的机会目前出现在相关材料p型AlGaN的开发中。 这可能是开创性的，因为它将为明亮的紫外线（UV）LED铺平道路，可用于许多节能应用，包括空气和水净化，光疗，气体传感，植物生长照明和UV固化。该综合实验/理论研究项目旨在实现新型高效导电p型GaN和AlGaN半导体材料。向GaN和AlGaN中添加铍（Be）杂质有望显著提高这些材料的p型导电性，从而显著提高UV LED的效率。学生，包括那些来自代表性不足的群体，有机会获得最先进的材料沉积，光谱实验和理论计算的实践经验。该项目还为弗吉尼亚联邦大学相对较小的物理系的研究和教育奠定了坚实的基础。技术描述：该项目的重点是Be掺杂GaN和AlGaN的生长以及这些材料中点缺陷的基础研究。对Be掺杂GaN的光致发光分析表明，Be是GaN中最浅的受主，但由于材料生长过程中会形成各种点缺陷，实现p型导电仍然是一项具有挑战性的任务。这项合作研究涉及Be的微观特性和GaN和AlGaN中相关缺陷的第一性原理计算，通过金属有机化学气相沉积法生长Be掺杂的GaN和AlGaN，使用离子注入，热退火，以及详细的实验研究，主要是光致发光和开尔文探针方法。研究了生长条件（温度、压力、气体环境）、Si和Mg共掺杂、δ掺杂技术、表面活性剂的使用、各种热退火方法的作用以实现导电p型材料。通过使用先进的实验和理论方法对GaN和AlGaN中Be和其他缺陷的性质和行为进行深入和全面的研究，对于基本了解半导体中的点缺陷，辐射和非辐射复合的机制以及实现高效p型材料的可能生长途径至关重要。此外，目前的方法在固态理论的准确性是通过直接的实验验证严格审查。这个奖项反映了NSF的法定使命，并已被认为是值得通过使用基金会的智力价值和更广泛的影响审查标准进行评估的支持。

项目成果

Photoluminescence from defects in GaN

GaN 缺陷的光致发光

• DOI: 10.1117/12.2645878
• 发表时间: 2023
• 期刊: Photoluminescence from defects in GaN
• 作者: Reshchikov, Michael A.

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

• DOI: 10.1038/s41598-020-59033-z
• 发表时间: 2020-02
• 期刊: Scientific Reports
• 影响因子: 4.6
• 作者: M. Reshchikov;M. Vorobiov;O. Andrieiev;K. Ding;N. Izyumskaya;V. Avrutin;A. Usikov;H. Helava;Y. Makarov

Fine structure of another blue luminescence band in undoped GaN

未掺杂GaN中另一个蓝色发光带的精细结构

• DOI: 10.1063/1.5126803
• 发表时间: 2019
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Reshchikov, Michael A.

Giant shifts of photoluminescence bands in GaN

• DOI: 10.1063/1.5140686
• 发表时间: 2020-02
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: M. Reshchikov

Measurement and analysis of photoluminescence in GaN

• DOI: 10.1063/5.0041608
• 发表时间: 2021-03-28
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Reshchikov, Michael A.