EAGER: Feasibility Study of Epitaxial Oxide Resistive Field Effect Transistor (EOR-FET)

在保持相同或相似的功耗水平的同时加快计算速度的需求是微电子学中最古老和最具挑战性的问题之一。在这个迫切的项目中，一个探索性的想法是利用外延钙钛矿氧化物异质结构作为高性能、高能效计算的新平台。这项提案中开发的方法是创造性和原创性的，因为尽管在新的逻辑器件上进行了许多研究和开发工作，但关于氧化物薄膜如何引领更好的计算的工作却很少。因此，如果这项研究成功，这项研究将引导研究人员重新思考氧化物在计算设备中的作用，并最终为解决当今最重大的计算挑战做出贡献。在这个项目中，通过协同结合先进材料的多个学科，推出了一种创新的设备解决方案。该项目的主要教育目标是将最先进的研究成果直接整合到UTSA的课程中，UTSA是一家研究密集型、为拉美裔服务的机构。通过发展虚拟实验室环境，预计将克服教育障碍，这是用基于项目的研究培训代表人数不足的少数族裔学生的一个巨大挑战。该提案的具体研究目标是确定构建电致伸缩场效应晶体管(FET)器件结构的最佳方法，并了解在速度、功率和可靠性方面导致其优异器件性能的主要因素。基于初步数据，中心假设是由先进的氧化物-MBE(分子束外延)技术制备的外延氧化物异质结构将实现从顶部压电栅氧化层到底部记忆沟道层的最大应变传递，从而导致电致伸缩FET的成功演示。为了验证这种新型器件结构的可行性，将采用理论和实验相结合的方法来研究作为高速、低功耗逻辑器件的关键部件的各个氧化层。这项研究将加强对如何将压电材料与沟道材料最佳匹配以实现最大电致伸缩FET器件性能的基本理解。这项拟议的工作具有重要的学术意义，因为它最终将为这项创新技术如何定位为下一代逻辑提供正确的见解，作为其他现有或新兴设备候选设备的基准。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

The need to accelerate computing speed while maintaining the same or similar level of power consumption is one of the oldest and most challenging problems in microelectronics. In this EAGER project, an exploratory idea of using epitaxial perovskite oxide heterostructure is investigated as a novel platform for high performance, energy-efficient computing. The approaches developed in this proposal are creative and original because although there have been many research and development efforts on the new logic devices, there is minimal work on how oxide thin films can lead the way to better computing. Thus, if successful, this research will lead researchers to rethink the role of oxides in computing devices and ultimately contribute to tackling today's most significant computing challenge. In this project, an innovative device solution is introduced by synergistically combining multiple disciplines in advanced materials. The primary educational goal of this project is to directly integrate the state-of-the-art research outcome into the curriculum of UTSA, which is a research-intensive, Hispanic-serving institution. An educational barrier that has existed as a great challenge in training underrepresented minority students with project-based research is expected to be overcome by developing the virtual laboratory environment. The specific research objective of this proposal is to determine the best ways of constructing the electrostrictive field-effect transistor (FET) device structure and understand the main factors that contribute to its superior device performance in terms of speed, power, and reliability. Based on preliminary data, the central hypothesis is that the epitaxial oxide heterostructure, prepared by the advanced oxide-MBE (molecular beam epitaxy) technique, will achieve maximum strain transfer from the top piezoelectric gate oxide layer to the bottom memristive channel layer, thereby leading to successful demonstration of the electrostrictive FET. To test feasibility of such a novel device structure, both the theoretical and experimental approaches will be adopted to investigate each oxide layer as key components of the high-speed, low-power logic device. This research will enhance a fundamental understanding of how a piezoelectric material can be best matched with a channel material for maximum electrostrictive FET device performance. The proposed work is of great intellectual significance because ultimately, it will provide a right insight on how this innovative technology will be positioned as the next-generation logic as benchmarked with other existing or emerging device candidates.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.