GOALI: An Experimental Study of Electric Field Driven Non-Fourier Thermal Transport in High Power Electronic Devices

GOALI：高功率电子器件中电场驱动非傅立叶热传输的实验研究

• 批准号: 1934482
• 负责人: Sukwon Choi
• 金额: $ 35万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-03-01 至 2023-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1934482&HistoricalAwards=false
• 关键词: GOALI; Experimental; Study; Electric; Field

Featuring broadband operation and high efficiency, gallium nitride-based radio frequency power amplifiers are key components to realize reliable, energy efficient, and ubiquitous wireless 5G networks that billions of devices use for data collection and computation. However, full implementation of gallium nitride microelectronics for 5G wireless networks requires overcoming concerns about overheating. This project will investigate and identify the thermal transport mechanisms leading to the discrepancies between theoretical predictions and experimental observations, to allow design of effective thermal management for reliable performance. Moreover, this project will encompass educational tasks designed to bridge the gap between thermal sciences and electronic device physics and to lower the entry barrier for undergraduate students to study nanoscale heat transfer principles. The educational activities will also expose underrepresented students to industry-driven academic research and inspire K-12 students to pursue STEM-related fields.The research goal of this project is to experimentally identify and probe nanoscopic, non-Fourier thermal transport mechanisms that are responsible for the amplified heating within gallium nitride transistors simultaneously subjected to extreme electric field and heat flux conditions. It is hypothesized that the observed amplified heating is a combined result of nanoscale heat source size effects, electric field induced deformation of the gallium nitride crystal, and thermal non-equilibrium among energy carriers, all of which are caused by a nanoscale electric field spike. A deep ultraviolet thermal imaging capability which offers the highest spatial resolution among commercial thermal imaging systems will be developed in order to test this hypothesis and to study the fundamental physics in gallium nitride transistors. The developed deep ultraviolet thermal imaging technique will be used together with Raman spectroscopy, photoluminescence, and a novel multi-scale electro-thermal modeling scheme to study the physical origins of the amplified heating in high voltage-biased gallium nitride transistors. Research outcomes will facilitate electro-thermal co-design and improve industry standard methods for lifetime assessment of gallium nitride power amplifiers.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

基于氮化镓的射频功率放大器具有宽带操作和高效率的特点，是实现可靠、节能和无处不在的无线5G网络的关键组件，数十亿设备用于数据收集和计算。然而，全面实施氮化镓微电子技术用于5G无线网络需要克服对过热的担忧。该项目将研究和确定导致理论预测和实验观察之间差异的热传输机制，以便设计有效的热管理以实现可靠的性能。此外，该项目将包括旨在弥合热科学和电子器件物理之间的差距的教育任务，并降低本科生学习纳米级传热原理的入学门槛。教育活动还将让代表性不足的学生接触行业驱动的学术研究，并激励K-12学生从事STEM相关领域。该项目的研究目标是通过实验识别和探索纳米级非傅里叶热传输机制，这些机制是导致氮化镓晶体管内同时受到极端电场和热通量条件的放大加热的原因。据推测，所观察到的放大加热是纳米级热源尺寸效应、电场诱导的氮化镓晶体变形以及能量载体之间的热不平衡的综合结果，所有这些都是由纳米级电场尖峰引起的。将开发一种在商用热成像系统中提供最高空间分辨率的深紫外热成像能力，以检验这一假设并研究氮化镓晶体管的基本物理学。开发的深紫外热成像技术将与拉曼光谱，光致发光，和一种新的多尺度电热建模方案一起使用，以研究高压偏置氮化镓晶体管中放大加热的物理起源。研究成果将促进电热协同设计，并改进氮化镓功率放大器寿命评估的行业标准方法。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers

• DOI: 10.1109/tcpmt.2021.3091555
• 发表时间: 2021-08-01
• 期刊: IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
• 影响因子: 2.2
• 作者: Shoemaker, Daniel;Malakoutian, Mohamadali;Choi, Sukwon
• 通讯作者: Choi, Sukwon

Experimental Probing of the Bias Dependent Self-Heating in AlGaN/GaN HEMTs With a Transparent Indium Tin Oxide Gate

具有透明氧化铟锡栅极的 AlGaN/GaN HEMT 中偏压相关自加热的实验探测

• DOI: 10.1115/ipack2022-98800
• 发表时间: 2022
• 期刊: ASME 2022 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
• 作者: Karim, Anwarul;Kim, Tae Kyoung;Shoemaker, Daniel;Song, Yiwen;Kwak, Joon Seop;Choi, Sukwon
• 通讯作者: Choi, Sukwon

Deep-Ultraviolet Thermoreflectance Thermal Imaging of GaN High Electron Mobility Transistors

GaN 高电子迁移率晶体管的深紫外热反射热成像

• DOI: 10.1109/itherm54085.2022.9899680
• 发表时间: 2022
• 期刊: 2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm
• 作者: Shoemaker, Daniel C.;Karim, Anwarul;Kendig, Dustin;Kim, Hyungtak;Choi, Sukwon
• 通讯作者: Choi, Sukwon

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

• DOI: 10.1115/1.4047100
• 发表时间: 2020-05
• 期刊: Journal of Electronic Packaging
• 影响因子: 1.6
• 作者: J. S. Lundh;Yiwen Song;B. Chatterjee;A. Baca;R. Kaplar;A. Armstrong;A. Allerman;B. Klein;D. Kendig;Hyungtak Kim;Sukwon Choi

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

• DOI: 10.1115/1.4049293
• 发表时间: 2021-06-01
• 期刊: JOURNAL OF ELECTRONIC PACKAGING
• 影响因子: 1.6
• 作者: Warzoha，Ronald J.;Wilson，Adam A.;Graham，Samuel
• 通讯作者: Graham，Samuel