SBIR Phase I: Low-Cost High Efficiency Gallium-Nitride Power Amplifiers

SBIR 第一阶段：低成本高效率氮化镓功率放大器

• 批准号: 1938676
• 负责人: Nick Chopra
• 金额: $ 22.5万
• 依托单位: RECON RF, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-10-15 至 2020-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1938676&HistoricalAwards=false
• 关键词: SBIR; Phase; Low; Cost; Efficiency

The broader impact of this Small Business Innovation Research (SBIR) Phase I project is the significant advancement of U.S. wireless technology and infrastructure. The proposed research applies an innovative high-frequency radio-frequency design process to address emerging market needs that current products and design processes are unable to meet. The key feature of the design process proposed is its basis on technically rigorous transistor-centric measurement and model-based design processes and capabilities. This will serve present and next generation applications in legacy 3G/4G, emerging 5G, Public Safety and Wireless Charging markets.The proposed project uses an innovative high-efficiency design technique for solid state power amplifier (SSPA) integrated circuit (IC) products operating in the Ultra-High Frequency (UHF), S and C bands. These new IC's will utilize GaN-on-Si, which is far more cost-viable with high volume wafer sizes up to eight-inches in diameter as compared to the conventional GaN-on-SiC substrate material. Use of GaN-on-Si semiconductors, combined with our new design technique, will achieve efficiencies far beyond incumbent products through waveform engineering and time-domain load-pull methods. Anticipated technical results include GaN SSPA pallet amplifier products realized on the UHF, S and C bands by the end of Phase I, corresponding to the markets of wireless charging/RF-energy, public safety wireless networks and 5G communications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

小型企业创新研究(SBIR)第一阶段项目的更广泛影响是美国无线技术和基础设施的显著进步。拟议的研究应用了一种创新的高频射频设计流程，以满足新兴市场的需求，而目前的产品和设计流程无法满足这些需求。提出的设计过程的主要特征是其以技术上严格的以晶体管为中心的测量和基于模型的设计过程和能力的基础。这将服务于传统3G/4G、新兴5G、公共安全和无线充电市场的现有和下一代应用。拟议的项目使用了一种创新的高效设计技术，用于运行在超高频、S和C波段的固态功率放大器集成电路(IC)产品。这些新的集成电路将使用硅上氮化镓，与传统的碳化硅上氮化镓衬底材料相比，与传统的氮化硅衬底材料相比，这种材料具有更高的成本可行性，可以实现直径达8英寸的大容量晶片。使用GaN-on-Si半导体，结合我们的新设计技术，将通过波形工程和时域负载拉动方法实现远远超过现有产品的效率。预期的技术成果包括在第一阶段结束前在超高频、S和C频段实现的GAN SSPA托盘放大器产品，与无线充电/射频能源、公共安全无线网络和5G通信市场相对应。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。