SBIR Phase I: Low-Cost High Efficiency Gallium-Nitride Power Amplifiers

这项小型企业创新研究（SBIR）第一阶段项目的更广泛影响是美国无线技术和基础设施的重大进步。拟议的研究采用创新的高频射频设计过程，以满足当前产品和设计过程无法满足的新兴市场需求。所提出的设计过程的关键特征是其基于技术上严格的以晶体管为中心的测量和基于模型的设计过程和能力。这将服务于传统的3G/4G、新兴的5G、公共安全和无线充电市场的当前和下一代应用。拟议的项目使用了一种创新的高效率设计技术，用于在超高频（UHF）、S和C频段工作的固态功率放大器（SSPA）集成电路（IC）产品。这些新的IC将利用GaN-on-Si，与传统的GaN-on-SiC衬底材料相比，这种材料在直径高达8英寸的大批量晶圆尺寸下更具成本可行性。 使用硅基氮化镓半导体，结合我们的新设计技术，将通过波形工程和时域负载牵引方法实现远远超过现有产品的效率。预期的技术成果包括在第一阶段结束时实现UHF、S和C频段的GaN SSPA托盘放大器产品，对应于无线充电/射频能源、公共安全无线网络和5G通信市场。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact of this Small Business Innovation Research (SBIR) Phase I project is the significant advancement of U.S. wireless technology and infrastructure. The proposed research applies an innovative high-frequency radio-frequency design process to address emerging market needs that current products and design processes are unable to meet. The key feature of the design process proposed is its basis on technically rigorous transistor-centric measurement and model-based design processes and capabilities. This will serve present and next generation applications in legacy 3G/4G, emerging 5G, Public Safety and Wireless Charging markets.The proposed project uses an innovative high-efficiency design technique for solid state power amplifier (SSPA) integrated circuit (IC) products operating in the Ultra-High Frequency (UHF), S and C bands. These new IC's will utilize GaN-on-Si, which is far more cost-viable with high volume wafer sizes up to eight-inches in diameter as compared to the conventional GaN-on-SiC substrate material. Use of GaN-on-Si semiconductors, combined with our new design technique, will achieve efficiencies far beyond incumbent products through waveform engineering and time-domain load-pull methods. Anticipated technical results include GaN SSPA pallet amplifier products realized on the UHF, S and C bands by the end of Phase I, corresponding to the markets of wireless charging/RF-energy, public safety wireless networks and 5G communications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.