SBIR Phase I: Fabrication of Vertical Junction GaN FET Devices via Pulsed Laser Annealing Process

SBIR 第一阶段：通过脉冲激光退火工艺制造垂直结 GaN FET 器件

• 批准号: 1939955
• 负责人: Richard Brown
• 金额: $ 22.49万
• 依托单位: JR2J, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-10-15 至 2021-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1939955&HistoricalAwards=false
• 关键词: SBIR; Phase; Fabrication; Vertical; Junction

The broader impact of this Small Business Innovation Research (SBIR) Phase I project will be the creation of a more efficient power grid by enabling smaller increased efficiency power converter circuits and units. Additionally, more efficient power converters will enable greater efficiency in the manufacturing and electric vehicle industries, as well as a more efficient power grid. The proposed project will investigate the use of a pulsed excimer laser annealing (PLA) technique to activate implanted dopants and repair implant induced damage in GaN films grown on GaN substrates for the fabrication of vertically conducting, high voltage field effect transistors. The ultimate goals of this Phase I project are to develop viable prototypes for an enhancement mode vertically conducting field effect transistor using the PLA technique. The key application of these devices will be in switched mode power supplies, which can be made smaller than current state of practice since vertical GaN devices will be associated with smaller parasitics. The development of a scalable prototype vertical gallium nitride (GaN) vertical Field Effect Transistors (FETs) will open a path toward scaled production and commercialization of higher breakdown devices will lead to smaller, more efficient power supplies and converter end products in the power electronics market.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该小型企业创新研究（SBIR）第一阶段项目的更广泛影响将是通过启用更小的高效功率转换器电路和单元来创建更高效的电网。此外，更高效的电源转换器将提高制造业和电动汽车行业的效率，以及更高效的电网。拟议的项目将研究使用脉冲准分子激光退火（PLA）技术，以激活注入的掺杂剂和修复植入引起的损伤GaN薄膜生长在GaN衬底上的垂直导电，高压场效应晶体管的制造。这个第一阶段项目的最终目标是开发可行的原型增强型垂直导电场效应晶体管使用PLA技术。 这些器件的关键应用将是开关模式电源，由于垂直GaN器件将与较小的寄生效应相关联，因此可以使开关模式电源比当前的实践状态更小。 可扩展的原型垂直氮化镓（GaN）垂直场效应晶体管（FET）的开发将开辟一条通往规模化生产的道路，该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准。