SBIR Phase I: Fabrication of Vertical Junction GaN FET Devices via Pulsed Laser Annealing Process

这项小企业创新研究（SBIR）第一阶段项目的广泛影响将是通过实现更小、更高效的电源转换电路和单元来创建更高效的电网。此外，更高效的电源转换器将提高制造业和电动汽车行业的效率，以及更高效的电网。该项目将研究使用脉冲准分子激光退火（PLA）技术来激活植入的掺杂剂和修复生长在GaN衬底上的GaN薄膜中植入引起的损伤，用于制造垂直导电的高压场效应晶体管。第一阶段项目的最终目标是利用聚乳酸技术开发一种增强模式垂直传导场效应晶体管的可行原型。这些器件的关键应用将是在开关模式电源中，由于垂直GaN器件将具有更小的寄生，因此可以使其比目前的实际状态更小。可扩展的垂直氮化镓（GaN）垂直场效应晶体管（fet）原型的开发将为更高击穿器件的规模化生产和商业化开辟道路，这将导致电力电子市场上更小、更高效的电源和转换器终端产品。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact of this Small Business Innovation Research (SBIR) Phase I project will be the creation of a more efficient power grid by enabling smaller increased efficiency power converter circuits and units. Additionally, more efficient power converters will enable greater efficiency in the manufacturing and electric vehicle industries, as well as a more efficient power grid. The proposed project will investigate the use of a pulsed excimer laser annealing (PLA) technique to activate implanted dopants and repair implant induced damage in GaN films grown on GaN substrates for the fabrication of vertically conducting, high voltage field effect transistors. The ultimate goals of this Phase I project are to develop viable prototypes for an enhancement mode vertically conducting field effect transistor using the PLA technique. The key application of these devices will be in switched mode power supplies, which can be made smaller than current state of practice since vertical GaN devices will be associated with smaller parasitics. The development of a scalable prototype vertical gallium nitride (GaN) vertical Field Effect Transistors (FETs) will open a path toward scaled production and commercialization of higher breakdown devices will lead to smaller, more efficient power supplies and converter end products in the power electronics market.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.