Metal Organic Vapour Phase Epitaxy of Semiconductor Heterostructures and Interfaces (A01)

半导体异质结构和界面的金属有机气相外延（A01）

• 批准号: 241799167
• 金额: --
• 依托单位: Wissenschaftliches Zentrum für Materialwissenschaften
• 依托单位国家: 德国
• 项目类别: Collaborative Research Centres
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/241799167?language=en
• 关键词: Metal; Organic; Vapour; Phase; Epitaxy

This project aims at the deposition of defined interfaces in III/V-compound semiconductor heterostructures applying the developed low-temperature metal organic vapour phase epitaxy (MOVPE) and at their characterization. The successful studies of the GaP/(001)Si-model system for lattice-matched, polar/nonpolar interface will be extended to GaP/(211)Si-, AlP/(001)Si-, GaAs/(001)Ge- and (GaIn)P/(001)Ge-interface configurations. The influence of strain on interface formation processes will be studied in strained (GaIn)As/(GaIn)P-heterostructures. In addition, specific metastable, multinary (GaIn)(NAsSb)-based heterostructures with type-II-band alignment are optimized for fundamental studies of charge transfer excitations as well as possible applications in edge-emitting lasers.

本项目旨在应用发展的低温金属有机气相外延技术(MOVPE)在III/V化合物半导体异质结中沉积确定的界面，并对其进行表征。对晶格匹配的GaP/(001)Si模型系统的研究将扩展到GaP/(211)Si-、AlP/(001)Si-、GaAs/(001)Ge-和(GaN)P/(001)Ge界面组态。应变对界面形成过程的影响将在应变(增益)As/(增益)P异质结中进行研究。此外，基于亚稳、多(增益)(NAsSb)的具有第二类能带排列的特殊异质结被优化用于电荷转移激发的基础研究以及在边缘发射激光器中的可能应用。