Metal Organic Vapour Phase Epitaxy of Semiconductor Heterostructures and Interfaces (A01)

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This project aims at the deposition of defined interfaces in III/V-compound semiconductor heterostructures applying the developed low-temperature metal organic vapour phase epitaxy (MOVPE) and at their characterization. The successful studies of the GaP/(001)Si-model system for lattice-matched, polar/nonpolar interface will be extended to GaP/(211)Si-, AlP/(001)Si-, GaAs/(001)Ge- and (GaIn)P/(001)Ge-interface configurations. The influence of strain on interface formation processes will be studied in strained (GaIn)As/(GaIn)P-heterostructures. In addition, specific metastable, multinary (GaIn)(NAsSb)-based heterostructures with type-II-band alignment are optimized for fundamental studies of charge transfer excitations as well as possible applications in edge-emitting lasers.