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Oxide and chalcogenide MOCVD (metal-organic chemical vapour deposition)

Oxide and chalcogenide MOCVD (metal-organic chemical vapour deposition)
氧化物和硫族化物 MOCVD(金属有机化学气相沉积)
批准号:
EP/T019085/1
负责人:
Daniel Lamb
金额:
$336.26万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2020
资助国家:
英国
项目状态:
未结题
起止时间:
2020 至 --

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中文摘要
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英文摘要
The history of II-VI metal-organic chemical vapour deposition (MOCVD) goes back as far as IIII-V MOCVD but has not had the traction in applications for lasers, LEDs and high frequency devices that has been experienced by III-V semiconductors. A new generation of MOCVD equipment can more fully exploit the potential of II-VI semiconductors and explore new oxides and chalcogenides in the exiting areas of III-VIs such as Ga2O3 and 2-D semiconductors such as MoS2. There is now a compelling case for the UK to have state-of-the-art MOCVD equipment for compound semiconductors (CS) covering oxide and chalcogenide materials that are not covered by existing centres such as the National Epitaxy Facility at Sheffield, Cambridge and UCL, and Institute of CS at Cardiff. The UK has a golden opportunity to build on our strengths in CS research that will drive innovation across a range of new opto-electronic and power electronic devices. The need arises from a new generation of functional compound semiconductor materials to capture the unique properties of oxide and chalcogenide compound semiconductors (CSs), complementing III-V compounds and silicon, and opening new application areas in optoelectronics, energy and healthcare. It is proposed that we buy the Aixtron Close Couple Showerhead (CCS) reactor that has been proven to be the reactor design of choice for GaN deposition and will be the ideal equipment to deposit high quality oxide and chalcogenide compound semiconductor materials. "The UK needs this facility, which it does not have at present. Swansea is an excellent place for it." - Prof. Sir Colin Humphreys (Cambridge). "This proposed research facility will perfectly complement the installation of ~100 production MOCVD reactors leveraged by a £375M investment by IQE Plc over 2018-2022" - Dr Wyn Meredith (CSC, Cardiff). The CCS reactor will be installed in a new building for the Centre for Integrated Semiconductor Materials (CISM) (due for completion in Q1 2021) on the Swansea University Bay Campus. Over 140 m2 of specialist materials laboratory space will be allocated to the MOCVD reactor and complementary materials and characterisation equipment from Professor Irvine's laboratory. This new laboratory will be managed by Professor Irvine's team to provide high quality oxide and chalcogenide CSs to our research partners in Swansea University, other UK universities, industrial partners and to international collaborators. This will put the UK at the forefront of new science and technology using oxide and chalcogenide CSs for applications including high efficiency photovoltaic solar cells, Light harvesting quantum wire opto-electronic devices, piezoelectric energy harvesting, high breakdown voltage power electronic devices and light emitters. This new science and technology will benefit EPSRC priorities of "21st Century Products" and "Sustainable Industries" through enabling smart new products that could be rapidly prototyped through well proven manufacturing capability for MOCVD in the UK and enabling the application of more sustainable materials and reduced materials usage. This exciting opportunity is detailed in the case for support.
期刊论文(10)
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科研奖励(0)
会议论文
Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and V OC
原位 Cd 饱和 MOCVD 生长的 CdTe 太阳能电池对 As 掺杂和 VOC 的影响
DOI: 10.1109/jphotov.2022.3195086
发表时间: 2022
期刊: IEEE Journal of Photovoltaics
影响因子: 3
作者: [Oklobia O]
通讯作者: Oklobia O
Creating metal saturated growth in MOCVD for CdTe solar cells
在 MOCVD 中为 CdTe 太阳能电池创造金属饱和生长
DOI: 10.1016/j.jcrysgro.2023.127124
发表时间: 2023
期刊: Journal of Crystal Growth
影响因子: 1.8
作者: [Irvine S]
通讯作者: Irvine S
DOI: 10.1016/j.cartre.2022.100153
发表时间: 2021-10
期刊: Carbon Trends
影响因子: --
作者: [Lijie Li]
通讯作者: Lijie Li
DOI: 10.1088/2631-7990/ac529c
发表时间: 2022-02
期刊: International Journal of Extreme Manufacturing
影响因子: 14.7
作者: [Zoushuang Li;Junren Xiang;Xiao Liu;Xiaobo Li;Lijie Li;B. Shan;Rong Chen]
通讯作者: Zoushuang Li;Junren Xiang;Xiao Liu;Xiaobo Li;Lijie Li;B. Shan;Rong Chen
Doped Emitters to Unlock Lowest Cost Solar Electricity
  • 批准号:
    EP/W000555/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $61.69万
  • 财政年份:
    2021
  • 负责人:
    Daniel Lamb
  • 依托单位:
海外基金