Oxide and chalcogenide MOCVD (metal-organic chemical vapour deposition)
Oxide and chalcogenide MOCVD (metal-organic chemical vapour deposition)
批准号:
EP/T019085/1
负责人:
Daniel Lamb
金额:
$336.26万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2020
资助国家:
英国
项目状态:
未结题
起止时间:
2020 至 --
中文摘要
II-VI金属有机化学气相沉积(MOCVD)的历史可以追溯到III-V MOCVD,但在激光,led和高频器件的应用中没有III-V半导体所经历的吸引力。新一代MOCVD设备可以更充分地挖掘II-VI半导体的潜力,在现有的iii - vi半导体领域如Ga2O3和二维半导体领域如MoS2中探索新的氧化物和硫族化合物。现在有一个令人注目的案例,英国拥有最先进的MOCVD设备,用于化合物半导体(CS),覆盖氧化物和硫族化合物材料,现有的中心,如谢菲尔德、剑桥和伦敦大学学院的国家外延设施,以及卡迪夫的CS研究所没有覆盖这些材料。英国有一个绝佳的机会来建立我们在CS研究方面的优势,这将推动一系列新的光电和电力电子设备的创新。新一代功能化合物半导体材料需要捕捉氧化物和硫族化合物半导体(CSs)的独特性能,补充III-V化合物和硅,并在光电子、能源和医疗保健领域开辟新的应用领域。建议我们购买爱思强紧密耦合淋浴(CCS)反应器,该反应器已被证明是GaN沉积的首选反应器设计,并且将是沉积高质量氧化物和硫族化合物半导体材料的理想设备。“英国需要这个设施,但目前还没有。斯旺西是一个很好的地方。”- Colin Humphreys教授爵士(剑桥)。“这个拟议的研究设施将完美地补充IQE Plc在2018-2022年期间投资3.75亿英镑的约100个生产MOCVD反应器的安装,”Wyn Meredith博士(CSC, Cardiff)。CCS反应堆将安装在斯旺西大学湾校区的集成半导体材料中心(CISM)(将于2021年第一季度完工)的新建筑中。超过140平方米的专业材料实验室空间将分配给MOCVD反应器以及Irvine教授实验室的补充材料和表征设备。这个新实验室将由欧文教授的团队管理,为我们在斯旺西大学的研究合作伙伴、其他英国大学、工业合作伙伴和国际合作者提供高质量的氧化物和硫族化合物CSs。这将使英国在使用氧化物和硫族化合物CSs的新科学和技术的前沿,包括高效光伏太阳能电池、光收集量子线光电器件、压电能量收集、高击穿电压电力电子器件和光发射器。这项新的科学和技术将使EPSRC的“21世纪产品”和“可持续产业”优先事项受益,通过英国MOCVD的成熟制造能力,使智能新产品能够快速原型化,并使更多可持续材料的应用和减少材料的使用成为可能。这个令人兴奋的机会在支持案例中有详细说明。
英文摘要
The history of II-VI metal-organic chemical vapour deposition (MOCVD) goes back as far as IIII-V MOCVD but has not had the traction in applications for lasers, LEDs and high frequency devices that has been experienced by III-V semiconductors. A new generation of MOCVD equipment can more fully exploit the potential of II-VI semiconductors and explore new oxides and chalcogenides in the exiting areas of III-VIs such as Ga2O3 and 2-D semiconductors such as MoS2. There is now a compelling case for the UK to have state-of-the-art MOCVD equipment for compound semiconductors (CS) covering oxide and chalcogenide materials that are not covered by existing centres such as the National Epitaxy Facility at Sheffield, Cambridge and UCL, and Institute of CS at Cardiff. The UK has a golden opportunity to build on our strengths in CS research that will drive innovation across a range of new opto-electronic and power electronic devices. The need arises from a new generation of functional compound semiconductor materials to capture the unique properties of oxide and chalcogenide compound semiconductors (CSs), complementing III-V compounds and silicon, and opening new application areas in optoelectronics, energy and healthcare. It is proposed that we buy the Aixtron Close Couple Showerhead (CCS) reactor that has been proven to be the reactor design of choice for GaN deposition and will be the ideal equipment to deposit high quality oxide and chalcogenide compound semiconductor materials. "The UK needs this facility, which it does not have at present. Swansea is an excellent place for it." - Prof. Sir Colin Humphreys (Cambridge). "This proposed research facility will perfectly complement the installation of ~100 production MOCVD reactors leveraged by a £375M investment by IQE Plc over 2018-2022" - Dr Wyn Meredith (CSC, Cardiff). The CCS reactor will be installed in a new building for the Centre for Integrated Semiconductor Materials (CISM) (due for completion in Q1 2021) on the Swansea University Bay Campus. Over 140 m2 of specialist materials laboratory space will be allocated to the MOCVD reactor and complementary materials and characterisation equipment from Professor Irvine's laboratory. This new laboratory will be managed by Professor Irvine's team to provide high quality oxide and chalcogenide CSs to our research partners in Swansea University, other UK universities, industrial partners and to international collaborators. This will put the UK at the forefront of new science and technology using oxide and chalcogenide CSs for applications including high efficiency photovoltaic solar cells, Light harvesting quantum wire opto-electronic devices, piezoelectric energy harvesting, high breakdown voltage power electronic devices and light emitters. This new science and technology will benefit EPSRC priorities of "21st Century Products" and "Sustainable Industries" through enabling smart new products that could be rapidly prototyped through well proven manufacturing capability for MOCVD in the UK and enabling the application of more sustainable materials and reduced materials usage. This exciting opportunity is detailed in the case for support.
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Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and V OC
原位 Cd 饱和 MOCVD 生长的 CdTe 太阳能电池对 As 掺杂和 VOC 的影响
DOI:
10.1109/jphotov.2022.3195086
发表时间:
2022
期刊:
IEEE Journal of Photovoltaics
影响因子:
3
作者:
[Oklobia O]
通讯作者:
Oklobia O
Creating metal saturated growth in MOCVD for CdTe solar cells
在 MOCVD 中为 CdTe 太阳能电池创造金属饱和生长
DOI:
10.1016/j.jcrysgro.2023.127124
发表时间:
2023
期刊:
Journal of Crystal Growth
影响因子:
1.8
作者:
[Irvine S]
通讯作者:
Irvine S
DOI:
10.1016/j.cartre.2022.100153
发表时间:
2021-10
期刊:
Carbon Trends
影响因子:
--
作者:
[Lijie Li]
通讯作者:
Lijie Li
DOI:
10.1088/2631-7990/ac529c
发表时间:
2022-02
期刊:
International Journal of Extreme Manufacturing
影响因子:
14.7
作者:
[Zoushuang Li;Junren Xiang;Xiao Liu;Xiaobo Li;Lijie Li;B. Shan;Rong Chen]
通讯作者:
Zoushuang Li;Junren Xiang;Xiao Liu;Xiaobo Li;Lijie Li;B. Shan;Rong Chen
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批准号:EP/W000555/1
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项目类别:Research Grant
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资助金额:$61.69万
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财政年份:2021
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负责人:Daniel Lamb
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依托单位:
海外基金