Time-Resolved Nonlinear Optical Spectroscopy at Semiconductor Interfaces (B05)

半导体界面的时间分辨非线性光谱 (B05)

• 批准号: 241812762
• 金额: --
• 依托单位: Wissenschaftliches Zentrum für Materialwissenschaften
• 依托单位国家: 德国
• 项目类别: Collaborative Research Centres
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/241812762?language=en
• 关键词: Time; Resolved; Nonlinear; Optical; Spectroscopy

Optical second-harmonic generation and coherent phonon spectroscopy are employed to obtain interface-specific information about electronic structure, vibrational excitations and the dynamics of charge-transfer processes at internal semiconductor interfaces. Model systems are buried interfaces of III-V semiconductors, such as GaP/Si, AlAs/GaAs and GaInAs/GaNAs, as well as heterostructures of two-dimensional transition metal dichalcogenides and other van der Waals materials. In particular, we will investigate optical interface phonons and dynamical interfacial processes induced by strong optical or THz excitation.

光学二次谐波产生和相干声子光谱获得界面特定的信息，电子结构，振动激发和动力学的电荷转移过程在内部半导体界面。模型系统是III-V族半导体的掩埋界面，例如GaP/Si、AlAs/GaAs和GaInAs/GaNAs，以及二维过渡金属二硫属化物和其他货车德瓦耳斯材料的异质结构。特别是，我们将研究光学界面声子和动态界面过程引起的强光学或太赫兹激发。