Time-Resolved Nonlinear Optical Spectroscopy at Semiconductor Interfaces (B05)

利用光学二次谐波产生和相干声子谱获得了关于半导体内部界面的电子结构、振动激发和电荷转移过程的动力学的界面特有信息。模型系统是III-V半导体的掩埋界面，如GaP/Si、AlAs/GaAs和GaInAs/GaAs，以及二维过渡金属二卤化物和其他van der Waals材料的异质结构。特别是，我们将研究光学界面声子和由强光或太赫兹激发引起的动态界面过程。

Optical second-harmonic generation and coherent phonon spectroscopy are employed to obtain interface-specific information about electronic structure, vibrational excitations and the dynamics of charge-transfer processes at internal semiconductor interfaces. Model systems are buried interfaces of III-V semiconductors, such as GaP/Si, AlAs/GaAs and GaInAs/GaNAs, as well as heterostructures of two-dimensional transition metal dichalcogenides and other van der Waals materials. In particular, we will investigate optical interface phonons and dynamical interfacial processes induced by strong optical or THz excitation.