Time-Resolved Nonlinear Optical Spectroscopy at Semiconductor Interfaces (B05)

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Optical second-harmonic generation and coherent phonon spectroscopy are employed to obtain interface-specific information about electronic structure, vibrational excitations and the dynamics of charge-transfer processes at internal semiconductor interfaces. Model systems are buried interfaces of III-V semiconductors, such as GaP/Si, AlAs/GaAs and GaInAs/GaNAs, as well as heterostructures of two-dimensional transition metal dichalcogenides and other van der Waals materials. In particular, we will investigate optical interface phonons and dynamical interfacial processes induced by strong optical or THz excitation.