SBIR Phase I: Rapid-scanning Ultrafast Imaging Microscope for Material Inspection

SBIR 第一阶段：用于材料检测的快速扫描超快成像显微镜

• 批准号: 2015068
• 负责人: Eric Martin
• 金额: $ 22.5万
• 依托单位: MONSTR SENSE TECHNOLOGIES, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-05-15 至 2021-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2015068&HistoricalAwards=false
• 关键词: SBIR; Phase; Rapid; scanning; Ultrafast

The broader/commercial impact of this Small Business Innovation Research (SBIR) Phase I project will develop and demonstrate a novel imaging microscopy technique for next-generation semiconductor defect inspection and material characterization. The technique is based on ultrafast spectroscopy and is uniquely able to measure functional material parameters over a rapidly raster-scanned image. The semiconductor industry relies on process control to maintain high yield and to prevent the propagation of faults through the manufacturing process. Semiconductor inspection represents a market of nearly $5 B in size and generates an estimated 15% of spending in the semiconductor industry. As the materials used in semiconductor devices evolve, so too must the inspection techniques. Many next-generation materials for various applications, such as solar energy and displays, are not pristine single crystals, and their inspection requires new technologies. The proposed project will advance the development of the next-generation materials.The intellectual merit of this project is to investigate translation of real-time imaging via ultrafast spectroscopy. The primary challenge of this project is that ultrafast spectroscopy scans at a single point typically take seconds to minutes, and a useful imaging system must raster a point excitation over a wide area containing thousands of pixels. This Phase I effort will develop a method and metrics for this technique, using images with substantially fewer samples. The project will explore methods to measure trapped states and defects that degrade semiconductor functionality. Performance goals include accelerating the speed of single-point spectroscopy by two orders of magnitude. Longer-term goals include integration of ultrafast spectroscopy with microscopy for materials analysis.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这个小企业创新研究（SBIR）第一阶段项目的更广泛/商业影响将开发和展示一种新的成像显微镜技术，用于下一代半导体缺陷检测和材料表征。该技术是基于超快光谱，是唯一能够测量功能材料参数的快速光栅扫描图像。半导体工业依赖于过程控制来保持高产量并防止故障在制造过程中传播。 半导体检测代表了一个近50 B美元的市场规模，估计占半导体行业支出的15%。随着半导体器件中使用的材料的发展，检测技术也必须发展。许多用于各种应用的下一代材料，如太阳能和显示器，都不是原始的单晶，它们的检测需要新技术。 该项目将推动下一代材料的发展。该项目的智力价值是通过超快光谱研究实时成像的翻译。该项目的主要挑战是，单点的超快光谱扫描通常需要数秒到数分钟，并且有用的成像系统必须在包含数千个像素的广阔区域上光栅化点激发。第一阶段的工作将为这项技术开发一种方法和指标，使用样本少得多的图像。该项目将探索测量降低半导体功能的捕获状态和缺陷的方法。性能目标包括将单点光谱的速度提高两个数量级。长期目标包括将超快光谱学与显微镜集成用于材料分析。该奖项反映了NSF的法定使命，并且通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。