SBIR Phase I: Integration of Heterogeneous Device Technologies

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力是开发一种新的半导体制造工艺，以“超越摩尔定律”。拟议活动的更广泛影响和商业潜力是减少为5G和未来无线技术（包括基站和卫星通信）制造高度集成组件的障碍。这将使新设备能够产生更高的功率，并以比当前解决方案更好的能源效率运行。这个小企业创新研究（SBIR）第一阶段项目将把一个异构集成过程商业化，将电子解决方案结合在一起，而不是其组成部分的能力。现有的硅工艺不能生产出能够处理III-V技术（如氮化镓（GaN））功率的晶体管。然而，III-V技术，如氮化镓，是专门市场需求的利基设备。当产品同时需要硅和化合物半导体组件时，芯片被安排在具有大寄生和互连的多芯片模块中，禁止高频（RF和毫米）应用。在一个共同的衬底上负担得起的不同材料系统的异构集成在现代工艺中仍然是一个难以捉摸的能力。该项目的研究目标是在毫米波产品的硅衬底上展示III-V器件的异构集成。该研究将探讨晶体管集成的大规模制造限制。该项目将设计、制造和测试射频无源元件以及与III-V型晶体管结合使用的硅中间层中的匹配网络。这些方法将在用于新兴5G无线电应用的28 GHz功率放大器产品上进行演示。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to develop a new semiconductor manufacturing process to work "beyond Moore's law". The broader impact and commercial potential of the proposed activity is to reduce the barrier to manufacture highly integrated components for 5G and future wireless technologies, including base stations and satellite communication. This will enable new devices that produce higher power and operate with better energy efficiency than current solutions.This Small Business Innovation Research (SBIR) Phase I project will commercialize a heterogeneous integration process to combine electronic solutions greater than the capabilities of their constituent parts. Incumbent silicon processes cannot produce transistors capable of the power handling of III-V technologies such as Gallium Nitride (GaN). However, III-V technologies, such as GaN, are niche devices for specialized market needs. When products require both silicon and compound semiconductor components, chips are arranged in multi-chip modules with large parasitics and interconnects that prohibit high-frequency (RF and millimeter) applications. Affordable heterogeneous integration of diverse material systems on a common substrate remains an elusive capability in modern processes. The research objectives of this project are to demonstrate heterogeneous integration of III-V devices on a silicon substrate for a millimeter-wave product. The research will investigate the large-scale manufacturing limitations of transistor integration. The project would design, fabricate and test RF passive components and matching networks in silicon interposers to be used in conjunction with III-V transistors. These approaches will be demonstrated on a 28 GHz power amplifier product for emerging 5G radio applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.