SBIR Phase I: Integration of Heterogeneous Device Technologies

这个小型企业创新研究(SBIR)第一阶段项目的更广泛的影响/商业潜力是开发一种新的半导体制造工艺，使其“超越摩尔定律”。拟议活动的更广泛影响和商业潜力是降低为5G和未来无线技术(包括基站和卫星通信)制造高度集成组件的障碍。这将使新设备能够产生比当前解决方案更高的功率并以更好的能效运行。这一小型企业创新研究(SBIR)第一阶段项目将把一种不同种类的集成过程商业化，以组合超出其组成部分能力的电子解决方案。现有的硅工艺无法生产出能够处理氮化镓(GaN)等III-V技术功率的晶体管。然而，III-V技术，如GaN，是专门满足市场需求的利基设备。当产品同时需要硅和化合物半导体元件时，芯片被安排在带有大量寄生和互连的多芯片模块中，从而禁止高频(射频和毫米)应用。在现代工艺中，在共同的衬底上进行负担得起的不同材料系统的异质集成仍然是一种难以捉摸的能力。该项目的研究目标是展示用于毫米波产品的硅衬底上的III-V器件的异质集成。这项研究将调查晶体管集成的大规模制造限制。该项目将设计、制造和测试与III-V晶体管结合使用的硅插入器中的射频无源组件和匹配网络。这些方法将在用于新兴5G无线电应用的28 GHz功率放大器产品上进行演示。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to develop a new semiconductor manufacturing process to work "beyond Moore's law". The broader impact and commercial potential of the proposed activity is to reduce the barrier to manufacture highly integrated components for 5G and future wireless technologies, including base stations and satellite communication. This will enable new devices that produce higher power and operate with better energy efficiency than current solutions.This Small Business Innovation Research (SBIR) Phase I project will commercialize a heterogeneous integration process to combine electronic solutions greater than the capabilities of their constituent parts. Incumbent silicon processes cannot produce transistors capable of the power handling of III-V technologies such as Gallium Nitride (GaN). However, III-V technologies, such as GaN, are niche devices for specialized market needs. When products require both silicon and compound semiconductor components, chips are arranged in multi-chip modules with large parasitics and interconnects that prohibit high-frequency (RF and millimeter) applications. Affordable heterogeneous integration of diverse material systems on a common substrate remains an elusive capability in modern processes. The research objectives of this project are to demonstrate heterogeneous integration of III-V devices on a silicon substrate for a millimeter-wave product. The research will investigate the large-scale manufacturing limitations of transistor integration. The project would design, fabricate and test RF passive components and matching networks in silicon interposers to be used in conjunction with III-V transistors. These approaches will be demonstrated on a 28 GHz power amplifier product for emerging 5G radio applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.