Collaborative Research: High-frequency, High-power Amplifier Based on Distributed Coupling of GaN HEMTs Through a SiC Substrate-integrated Waveguide

合作研究：基于 SiC 衬底集成波导的 GaN HEMT 分布式耦合的高频、高功率放大器

• 批准号: 2132323
• 负责人: James Hwang
• 金额: $ 32.5万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-09-01 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2132323&HistoricalAwards=false
• 关键词: Collaborative; Research; frequency; power; Amplifier

AbstractNontechnicalHigh-frequency, high-power sources are critical to exploiting the electromagnetic spectrum. The project may enable the next generation of millimeter-wave electronics with unprecedented bandwidth and power, while minimizing their size, weight, power consumption, cost, and failure rate. The methodologies developed to design, integrate, and fabricate high-power sources above 110 GHz, and to characterize these devices in terms of electromagnetic coupling, millimeter-wave performance, and thermal metrology can be used in the future to further improve the bandwidth and power of monolithically integrated power amplifiers to cover not only the entire millimeter-wave frequency range, but also terahertz frequencies that are not widely exploited. The substrate-integrated waveguide (SIW) platform may enable other electronic components such as high-quality filters and antennas to be monolithically integrated on a single chip, which has been difficult with conventional integrated circuits. The project directly impacts Future of Work by facilitating ubiquitous wireless communications, smart man-machine interfaces, and Internet of Things (IoT). It is estimated that wireless communications currently cover approximately 60% of the Earth surface, making Internet accessible to only about half of the world's population. 6G wireless communications enabled by millimeter-wave sources that are small, light, powerful, low cost, and reliable can extend the coverage to 100% of the Earth surface, making Internet accessible to everyone.TechnicalBased on an ultra-low-loss SiC SIW, a novel traveling-wave amplifier (TWA) is used to combine high-electron-mobility transistors (HEMTs) in a distributed manner for overcoming the power combining and impedance matching challenges of conventional monolithic millimeter-wave integrated circuits. Distributed and synchronous coupling between a quasi-transverse-electromagnetic wave on a grounded coplanar waveguide and a transverse-electric wave on an SIW is new, as is monolithic integration of SIW with transistors. This approach takes advantage of high-quality GaN grown epitaxially on SiC to achieve high-frequency, high-power performance through monolithic integration. This monolithic integration allows unprecedented precision and field strength in a distributed geometry, which is impossible to realize with conventional split-block machined parts or hybrid integration on a printed circuit board. This provides a path to high-frequency circuits with power and efficiency performance that is not otherwise attainable. As a proof-of-concept test vehicle, TWAs capable of 1-W output power at the D band (110-170 GHz) are designed, fabricated, and characterized. If successful, similar approaches can be used to generate higher powers at higher frequencies, or be implemented in other semiconductor technologies.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

摘要非技术性高频，高功率来源对于利用电磁频谱至关重要。该项目可以使下一代具有前所未有的带宽和功率的毫米波电子设备，同时最大程度地减少其尺寸，重量，功耗，成本和故障率。开发的方法是为了设计，整合和制造高于110 GHz以上的高功率来源，并在电磁耦合，毫米波性能和热量计量方面对这些设备进行表征，以后可以进一步使用单层集成宽度的宽度范围，但不仅可以覆盖整个毫米范围的频率，但还可以进一步提高整体范围的带宽和力量。被利用。底物集成的波导（SIW）平台可以使其他电子组件（例如高质量过滤器和天线）单层整合到单个芯片上，这对于常规的集成电路一直很困难。该项目通过促进无处不在的无线通信，智能人机接口和物联网（IoT）来直接影响工作的未来。据估计，无线通信目前占地约60％，使互联网仅占世界人口的一半。 6G wireless communications enabled by millimeter-wave sources that are small, light, powerful, low cost, and reliable can extend the coverage to 100% of the Earth surface, making Internet accessible to everyone.TechnicalBased on an ultra-low-loss SiC SIW, a novel traveling-wave amplifier (TWA) is used to combine high-electron-mobility transistors (HEMTs) in a distributed manner for overcoming the power combining and常规整体毫米波集成电路的阻抗匹配挑战。在SIW上接地的共面波导和横向电波上的准透明电磁波之间的分布式和同步耦合是新的，SIW与晶体管的单片整合也是如此。这种方法利用了在SIC上外恋种植的高质量gan，通过整体整合实现高频，高功率的性能。这种整体整合允许在分布式几何形状中进行前所未有的精度和场强，这是在印刷电路板上的常规拆分块机加工零件或混合集成无法实现的。这为具有功率和效率性能的高频电路提供了一条途径。作为概念验证的测试车，设计，制造和表征了D频段（110-170 GHz）的1-W输出功率。如果成功的话，可以使用类似的方法在更高频率下产生更高的力量，或在其他半导体技术中实施。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的智力优点和更广泛影响的评估来评估的审查标准。

项目成果

A Compact F-band Filter Based on SiC Substrate-integrated Waveguides

• DOI: 10.1109/apmc57107.2023.10439892
• 发表时间: 2023-12
• 期刊: 2023 Asia-Pacific Microwave Conference (APMC)
• 作者: Xiaopeng Wang;M. J. Asadi;Lei Li;Tianze Li;James C. M. Hwang;F. Thome;Peter Brückner;D. Schwantuschke

Single-sweep vs. banded characterizations of a D-band ultra-low-loss SiC substrate integrated waveguide

D 波段超低损耗 SiC 衬底集成波导的单次扫描与带状表征

• 发表时间: 2022
• 期刊: USA
• 作者: Li, L.;Reyes, S.;Asadi, M. J.;Jena, D.;Xing, H. G.;Fay, P.;Hwang, J. C.
• 通讯作者: Hwang, J. C.

A D-band frequency-doubling distributed amplifier thorugh monolithic integration of SiC SIW and GaN HEMTs

通过 SiC SIW 和 GaN HEMT 单片集成的 D 频段倍频分布式放大器

• 发表时间: 2023
• 期刊: Dec. 2023
• 作者: Li, L.;Li, T.;Fay, P.;Hwang, J. C.
• 通讯作者: Hwang, J. C.

Sub-terahertz devices and test metrology

亚太赫兹设备和测试计量

• 发表时间: 2023
• 期刊: Sep. 2023
• 作者: Li, L.;Asadi, M. J.;Li, T.;Wang, X.;Hwang, J. C.
• 通讯作者: Hwang, J. C.

Extraordinary Permittivity Characterization Using 4H-SiC Substrate-Integrated-Waveguide Resonators

使用 4H-SiC 衬底集成波导谐振器进行出色的介电常数表征

• DOI: 10.1109/arftg56062.2023.10148877
• 发表时间: 2023
• 期刊: 2023 100th ARFTG Microwave Measurement Conference (ARFTG
• 作者: Li, Lei;Reyes, Steve;Asadi, Mohammad Javad;Wang, Xiaopeng;Fabi, Gianluca;Ozdemir, Erdem;Wu, Weifeng;Fay, Patrick;Hwang, James C.
• 通讯作者: Hwang, James C.