SBIR Phase I: A Complementary Metal-Oxide Semiconductor (CMOS) Compatible Single Photon Avalanche Diode

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力是使用于远程激光雷达（光探测和测距）的3D相机更经济、更广泛、更可靠、更容易使用，就像普通移动设备中的相机一样。3D摄像头（LiDAR）在增强现实应用中被用于精确定位和确定物体的速度，对于需要200-300米范围的自动驾驶汽车和卡车的广泛采用至关重要。低成本硅传感器的眼睛安全问题迫使远程自动驾驶汽车客户一次使用一个像素或有限的视场成像，使用高成本和复杂的系统，这些系统基于需要特殊材料和制造的材料。该技术将在不影响眼睛安全的情况下，将主流材料和工艺技术用于远程自动驾驶汽车领域。这种能力将降低成本，降低复杂性，提高远程3D相机的可靠性，并有助于推动自动驾驶汽车行业的广泛采用。这项小企业创新研究（SBIR）第一阶段项目旨在开发一种基于锗的完全互补的金属氧化物半导体兼容单光子雪崩二极管（spad），该二极管在人眼安全波长下工作。目前基于锗的雪崩光电二极管由于隧道或位错产生的过度暗噪声需要低温冷却。它们在超过1450纳米的人眼安全波长处吸收不良。该项目将实现一个光子捕获应变异质结构器件架构，该架构减少暗计数，同时增强工作波长的吸收。器件结构将特别强调半导体生长过程的发展。实验结果将以大众市场、远程自动驾驶汽车应用的暗计数和吸收要求为基准。该技术将为基于化合物半导体的spad提供一种高可制造性、低成本的替代方案，后者通常在大型阵列中生产成本过高。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to make 3D cameras for long-range LiDAR (Light Detection and Ranging) more affordable, widespread, and as reliable and simple to use as cameras found in common mobile devices. 3D cameras (LiDAR) are being used for precise positioning and velocity determination of objects in augmented reality applications and are crucial for widespread adoption of autonomous cars and trucks where the 200-300 meter range is required. Eye safety concerns with low-cost silicon sensors force the long-range autonomous vehicle customers to use one pixel at the time or limited field of view imaging using high-cost and complex systems based on materials that require specialty materials and manufacturing. This technology will enable the use of mainstream materials and process technology for the long-range autonomous vehicle segment without compromising eye safety. This capability will reduce cost, lower complexity, and improve reliability of long-range 3D cameras and help propel the autonomous vehicle industry into widespread adoption.This Small Business Innovation Research (SBIR) Phase I project aims to develop a fully complementary metal-oxide semiconductor compatible single photon avalanche diode (SPADs) based on germanium that operates at eye safe wavelengths. Current germanium-based avalanche photodiodes require cryogenic cooling due to excessive dark noise from tunneling or dislocations. They suffer from poor absorption at the eye safe wavelengths beyond 1450 nm. This project will implement a photon trapping strained heterostructure device architecture which reduces dark counts while enhancing absorption at the operating wavelength. The device structure will be developed with particular emphasis on the semiconductor growth process. The experimental results will be benchmarked to the dark count and absorption requirements for the mass-market, long-range autonomous vehicle application. The technology will offer a highly manufacturable, lower cost alternative to compound semiconductor based SPADs that are often prohibitively expensive to produce in large arrays.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.