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SBIR Phase I: A Complementary Metal-Oxide Semiconductor (CMOS) Compatible Single Photon Avalanche Diode

SBIR Phase I: A Complementary Metal-Oxide Semiconductor (CMOS) Compatible Single Photon Avalanche Diode
SBIR 第一阶段:互补金属氧化物半导体 (CMOS) 兼容单光子雪崩二极管
批准号:
2136226
负责人:
Ingvar Aberg
金额:
$25.6万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2021
资助国家:
美国
项目状态:
已结题
起止时间:
2021-11-01 至 2022-12-31

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中文摘要
翻译
小型企业创新研究(SBIR)第一阶段项目的更广泛影响/商业潜力是使用于远程LiDAR(光检测和测距)的3D相机更实惠、更广泛,并像普通移动设备中的相机一样可靠和简单。3D摄像头(LiDAR)正被用于增强现实应用中对象的精确定位和速度确定,对于需要200-300米范围的自动驾驶汽车和卡车的广泛采用至关重要。低成本硅传感器的眼睛安全问题迫使远程自动驾驶汽车客户一次使用一个像素或使用基于需要特殊材料和制造的材料的高成本和复杂系统的有限视场成像。这项技术将使主流材料和工艺技术能够用于远程自动驾驶汽车领域,而不会损害眼睛安全。这一能力将降低成本,降低复杂性,提高远程3D摄像头的可靠性,并有助于推动自动驾驶汽车行业的广泛采用。这个小企业创新研究(SBIR)第一阶段项目旨在开发一种完全互补的金属氧化物半导体兼容单光子雪崩二极管(SPADs),其工作在眼睛安全的波长。目前基于锗的雪崩光电二极管需要低温冷却,因为隧道或位错产生了过多的暗噪声。在1450纳米以上的眼睛安全波长下,它们的吸收能力很差。该项目将实现一种光子捕获应变异质结构器件体系结构,它可以减少暗计数,同时增强在工作波长的吸收。器件结构的开发将特别侧重于半导体生长过程。实验结果将以大众市场、远程自动驾驶汽车应用的暗计数和吸收要求为基准。这项技术将为基于化合物半导体的SPAD提供一种高度可制造、成本更低的替代方案,后者在大阵列中的生产成本往往高得令人望而却步。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to make 3D cameras for long-range LiDAR (Light Detection and Ranging) more affordable, widespread, and as reliable and simple to use as cameras found in common mobile devices. 3D cameras (LiDAR) are being used for precise positioning and velocity determination of objects in augmented reality applications and are crucial for widespread adoption of autonomous cars and trucks where the 200-300 meter range is required. Eye safety concerns with low-cost silicon sensors force the long-range autonomous vehicle customers to use one pixel at the time or limited field of view imaging using high-cost and complex systems based on materials that require specialty materials and manufacturing. This technology will enable the use of mainstream materials and process technology for the long-range autonomous vehicle segment without compromising eye safety. This capability will reduce cost, lower complexity, and improve reliability of long-range 3D cameras and help propel the autonomous vehicle industry into widespread adoption.This Small Business Innovation Research (SBIR) Phase I project aims to develop a fully complementary metal-oxide semiconductor compatible single photon avalanche diode (SPADs) based on germanium that operates at eye safe wavelengths. Current germanium-based avalanche photodiodes require cryogenic cooling due to excessive dark noise from tunneling or dislocations. They suffer from poor absorption at the eye safe wavelengths beyond 1450 nm. This project will implement a photon trapping strained heterostructure device architecture which reduces dark counts while enhancing absorption at the operating wavelength. The device structure will be developed with particular emphasis on the semiconductor growth process. The experimental results will be benchmarked to the dark count and absorption requirements for the mass-market, long-range autonomous vehicle application. The technology will offer a highly manufacturable, lower cost alternative to compound semiconductor based SPADs that are often prohibitively expensive to produce in large arrays.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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海外基金
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