SBIR Phase I: A Complementary Metal-Oxide Semiconductor (CMOS) Compatible Single Photon Avalanche Diode
SBIR Phase I: A Complementary Metal-Oxide Semiconductor (CMOS) Compatible Single Photon Avalanche Diode
批准号:
2136226
负责人:
Ingvar Aberg
金额:
$25.6万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2021
资助国家:
美国
项目状态:
已结题
起止时间:
2021-11-01 至 2022-12-31
中文摘要
这一小型企业创新研究(SBIR)第一阶段项目的更广泛影响/商业潜力是使用于远程LiDAR(光探测和测距)的3D相机更实惠、更广泛,并且与常见移动的设备中的相机一样可靠和简单易用。3D相机(LiDAR)正在用于增强现实应用中的对象的精确定位和速度确定,并且对于需要200-300米范围的自动汽车和卡车的广泛采用至关重要。低成本硅传感器的眼睛安全问题迫使远程自动驾驶汽车客户一次使用一个像素,或者使用基于需要特殊材料和制造的材料的高成本和复杂系统进行有限的视场成像。该技术将使远程自动驾驶汽车领域能够使用主流材料和工艺技术,而不会影响眼睛安全。这一能力将降低成本,降低复杂性,并提高远程3D相机的可靠性,并有助于推动自动驾驶汽车行业的广泛采用。这个小企业创新研究(SBIR)第一阶段项目旨在开发一种完全互补的金属氧化物半导体兼容的单光子雪崩二极管(SPAD),该二极管基于锗,工作在人眼安全波长。目前的锗基雪崩光电二极管需要低温冷却,由于隧道或位错的过度暗噪声。 它们在超过1450 nm的眼睛安全波长处吸收差。本计画将实施光子捕捉应变异质结构元件架构,以减少暗计数,同时增强工作波长的吸收。器件结构的发展将特别强调半导体生长过程。实验结果将以大众市场,远程自动驾驶汽车应用的暗计数和吸收要求为基准。该技术将提供一个高度可制造的,成本较低的替代化合物半导体为基础的SPAD,往往是昂贵的生产在大阵列。这一奖项反映了NSF的法定使命,并已被认为是值得通过评估使用基金会的智力价值和更广泛的影响审查标准的支持。
英文摘要
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to make 3D cameras for long-range LiDAR (Light Detection and Ranging) more affordable, widespread, and as reliable and simple to use as cameras found in common mobile devices. 3D cameras (LiDAR) are being used for precise positioning and velocity determination of objects in augmented reality applications and are crucial for widespread adoption of autonomous cars and trucks where the 200-300 meter range is required. Eye safety concerns with low-cost silicon sensors force the long-range autonomous vehicle customers to use one pixel at the time or limited field of view imaging using high-cost and complex systems based on materials that require specialty materials and manufacturing. This technology will enable the use of mainstream materials and process technology for the long-range autonomous vehicle segment without compromising eye safety. This capability will reduce cost, lower complexity, and improve reliability of long-range 3D cameras and help propel the autonomous vehicle industry into widespread adoption.This Small Business Innovation Research (SBIR) Phase I project aims to develop a fully complementary metal-oxide semiconductor compatible single photon avalanche diode (SPADs) based on germanium that operates at eye safe wavelengths. Current germanium-based avalanche photodiodes require cryogenic cooling due to excessive dark noise from tunneling or dislocations. They suffer from poor absorption at the eye safe wavelengths beyond 1450 nm. This project will implement a photon trapping strained heterostructure device architecture which reduces dark counts while enhancing absorption at the operating wavelength. The device structure will be developed with particular emphasis on the semiconductor growth process. The experimental results will be benchmarked to the dark count and absorption requirements for the mass-market, long-range autonomous vehicle application. The technology will offer a highly manufacturable, lower cost alternative to compound semiconductor based SPADs that are often prohibitively expensive to produce in large arrays.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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