课题基金 / 基金详情

Advanced Computations with Experimental Validation to Accurately Describe Interface-Related Phenomena in Semiconductor Technologies

Advanced Computations with Experimental Validation to Accurately Describe Interface-Related Phenomena in Semiconductor Technologies
通过实验验证进行高级计算,以准确描述半导体技术中与界面相关的现象
批准号:
2138081
负责人:
Anthony Nicholson
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Fellowship Award
财政年份:
2021
资助国家:
美国
项目状态:
已结题
起止时间:
2021-09-01 至 2024-08-31

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中文摘要
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英文摘要
This award is made as part of the FY 2021 Mathematical and Physical Sciences Ascending Postdoctoral Research Fellowships (MPS-Ascend). Each fellowship supports a research and training project at a host institution in the mathematical and physical sciences, including applications to other disciplines, under the mentorship of a sponsoring scientist. This fellowship to Dr. Anthony Nicholson supports his research project entitled "Advanced Computations with Experimental Validation to Accurately Describe Interface-Related Phenomena in Semiconductor Technologies". The host institution for the fellowship is the National Renewable Energy Laboratory (NREL), and the sponsoring scientist is Dr. Stephan Lany. Dr. Nicholson is utilizing first-principles computational methodology and Density Functional Theory (DFT) to investigate atomic-scale structural and electronic properties of thin-film photovoltaic (PV) device interfaces affected by various electronic defects. Dr. Nicholson’s research work is relevant to the improvement of efficiency of thin-film cadmium-telluride photovoltaic modules, a PV technology that accounts for nearly 40% of all utility-scale PV installations in the US. The proposed fellowship at NREL consists of integrating state-of-the-art, high-fidelity first-principles-based computations with experimental validation to accurately describe electronic structures at semiconductor interfaces, while contributing to inclusion efforts of underrepresented minorities at NREL and Colorado State University (CSU).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(1)
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会议论文
Te/CdTe and Al/CdTe Interfacial Energy Band Alignment by Atomistic Modeling
通过原子建模进行 Te/CdTe 和 Al/CdTe 界面能带排列
DOI: 10.1021/acsami.2c05244
发表时间: 2022
期刊: ACS Applied Materials & Interfaces
影响因子: 9.5
作者: [Nicholson, Anthony P., Shah, Akash, Pandey, Ramesh, Munshi, Amit H., Sites, James, Sampath, Walajabad]
通讯作者: Sampath, Walajabad
1995 Presidential Awardees
  • 批准号:
    9554112
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.75万
  • 财政年份:
    1996
  • 负责人:
    Anthony Nicholson
  • 依托单位:
海外基金