Collaborative Research: US-Ireland R&D Partnership: Processing-Driven Nucleation Mediated Control for Manufacturing of Phase-Pure Ferroelectric Hafnia

合作研究：美国-爱尔兰 R

• 批准号: 2149487
• 负责人: Jon Ihlefeld
• 金额: $ 33.53万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-01-01 至 2025-12-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2149487&HistoricalAwards=false
• 关键词: Collaborative; Research; US; Ireland; R&amp

This award supports research that will develop new knowledge related to the manufacturing of electronic materials that will not form naturally, but that exhibit useful properties. The material studied in this effort is hafnium oxide, which can have a specific arrangement of atoms that results in a spontaneous electric charge separation that can be changed with application of a sufficient voltage. This functionality is useful for future generations of low power computing and computer memory. This particular hafnium oxide structure is challenging to prepare and often contains regions with other atomic arrangements that do not exhibit the useful spontaneous charge separation property. This award will support fundamental research to provide the knowledge needed to directly and completely form the hafnium oxide structure of interest. This new process will overcome the challenges of structural purity that have hindered mass production of hafnium oxide-based computer memory devices and enable development of new computing elements that consume less power. Low power devices are needed to reduce the overall energy consumption related to computing. This will directly impact the US economy, national security, and society by enabling the development and manufacture of new microelectronic technologies that lead to new functionality and less energy consumption. This project involves researchers in the United States, the Republic of Ireland, and Northern Ireland, representing several disciplines, including materials science, electron and scanning probe microscopies, and physics. The multi-disciplinary and multi-national team will develop educational outreach materials and present them to students in economically disadvantaged areas to stimulate interest in science, technology, engineering, and mathematics and to show how science and engineering are global endeavors.The goal of this fundamental research project is to develop a scalable manufacturing method to prepare phase-pure ferroelectric hafnium oxide and hafnium zirconium oxide by atomic layer deposition. The project will utilize plasma-enhanced atomic layer deposition to prepare amorphous deposits of hafnium oxide and hafnium zirconium oxide. The impact of processing parameters on the amorphous structure and resulting phases will be characterized using X-ray Diffraction, Extended X-ray Absorption Fine Structure, Transmission Electron Microscopy, Electron Energy Loss Spectroscopy, Scanning Probe Microscopy, and electrical property measurements. The project will determine how amorphous structure bond length and atomic coordination impact the nucleating phase. By isolating the impact of atomic layer deposition process parameters on the amorphous structure and then determining how that leads to crystalline phase formation, a deterministic means to prepare phase-pure materials will result. The nano- and device-scale ferroelectric behavior will be quantified using advanced microscopies and the impact of phase impurities on material performance will be measured. The end result will be new knowledge of the impact of amorphous structure on crystallization of hafnium oxide-based materials and the impact of phase impurity on ferroelectric performance.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该奖项支持开发与电子材料制造相关的新知识的研究，这些材料不会自然形成，但具有有用的特性。这项工作中研究的材料是氧化汞，它可以有特定的原子排列，导致自发的电荷分离，这种分离可以通过施加足够的电压来改变。这一功能对于下一代的低功率计算和计算机内存非常有用。这种特殊的氧化钨结构很难制备，并且通常包含具有其他原子排列的区域，这些区域不表现出有用的自发电荷分离性质。该奖项将支持基础研究，以提供直接和完全形成感兴趣的氧化镓结构所需的知识。这一新工艺将克服结构纯净度的挑战，这些挑战阻碍了基于氧化钨的计算机存储设备的大规模生产，并使消耗更少电力的新计算元件的开发成为可能。需要低功耗设备来降低与计算相关的总体能耗。这将直接影响美国经济、国家安全和社会，因为这将促进新微电子技术的开发和制造，从而带来新的功能和更少的能源消耗。该项目涉及美国、爱尔兰共和国和北爱尔兰的研究人员，他们代表几个学科，包括材料科学、电子和扫描探针显微镜以及物理学。这个多学科、多国家的团队将开发教育宣传材料，并将它们展示给经济困难地区的学生，以激发人们对科学、技术、工程和数学的兴趣，并展示科学和工程是如何全球化的。这一基础研究项目的目标是开发一种可扩展的制造方法，通过原子层沉积制备相纯铁电氧化氢和氧化锆。该项目将利用等离子体增强原子层沉积来制备非晶态的氧化铟和氧化锆的沉积。利用X射线衍射、扩展X射线吸收精细结构、透射电子显微镜、电子能量损失谱、扫描探针显微镜和电学性能测量来表征工艺参数对非晶态结构和所产生的相的影响。该项目将确定非晶态结构、键长和原子配位如何影响成核相。通过隔离原子层沉积工艺参数对非晶态结构的影响，然后确定这是如何导致晶相形成的，将产生一种制备相纯材料的确定性手段。纳米和器件尺度的铁电行为将使用先进的显微镜进行量化，并将测量相杂质对材料性能的影响。最终结果将是对非晶态结构对氧化铟材料晶化的影响以及相杂质对铁电性能的影响的新知识。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。