DMREF: GOALI: Designing Materials for Next-generation Spintronic Devices

非技术描述：费曼富有远见的主题演讲强调了使用概率计算机来模拟复杂的、固有的概率问题的必要性。该项目解决了开发能够加速概率算法的硬件的挑战。通过在磁隧道结（MTJs）中设计基于随机低势垒磁体的概率比特（p-bits），旨在实现概率计算的突破。所提出的材料基础侧重于识别具有超低能垒的新型软磁Heusler合金，可以使用节能自旋轨道扭矩（SOT）材料进行控制。这项跨学科的研究整合了理论建模、高通量材料筛选、计算模拟、实验合成和表征，以及模块化模拟，以加速p位实现的材料发现和器件设计。这项研究的变革潜力在于为概率计算提供紧凑和节能的硬件，这对半导体行业和扩大工业相关的自旋电子存储技术的材料基础具有重要意义。这项工作产生的研究成果将通过nanoHUB自旋电子学门户网站向更广泛的社区提供，所获得的知识将通过其教育平台传播，该平台已向数千名学生和工程师提供课程。此外，将通过计划中的暑期学校加强学生培训和劳动力发展。技术描述：本研究的目的是通过设计关键材料组件，以技术相关的高性能p位为目标。赫斯勒合金是一类杰出的金属间化合物，其磁性能可以通过合金成分和能带结构工程轻松调节。特别是，Heusler性质对于实现高频波动是理想的，因为低磁化、半金属性、几乎为零的磁晶各向异性和交换场增强的自旋动力学都可以在这些材料中实现。此外，许多Heusler材料与mtj中用作隧道势垒的MgO以及高效SOT材料表现出优异的晶格匹配，具有高隧道磁电阻。作为提出的材料搜索和优化的结果，我们期望证明由SOT材料控制的p位具有高达数十GHz的特征波动频率，并提高效率。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Non-technical Description: Feynman's visionary keynote speech emphasized the need for probabilistic computers to simulate complex, inherently probabilistic problems. This project addresses the challenge of developing hardware capable of accelerating probabilistic algorithms. By designing probabilistic bits (p-bits) based on stochastic low barrier magnets in magnetic tunnel junctions (MTJs), the research aims to realize a breakthrough in probabilistic computing. The proposed materials foundation focuses on identifying novel soft magnetic Heusler alloys with ultra-low energy barriers that can be controlled using energy-efficient spin-orbit torque (SOT) materials. This interdisciplinary endeavor integrates theoretical modeling, high-throughput materials screening, computational simulations, experimental synthesis and characterization, and modular simulations to accelerate materials discovery and device design for p-bit implementation. The transformative potential of this research lies in enabling compact and energy-efficient hardware for probabilistic computing, with implications for the semiconductor industry and expanding the material base for industry-relevant spintronic memory technologies. Research results produced by this work will be available to the wider community through the nanoHUB spintronics portal and gained knowledge will be disseminated through its educational platform that has offered courses to thousands of students and engineers. Moreover, student training and workforce development will be enhanced through a planned summer school. Technical Description: The objective of this research is to target technologically relevant high-performance p-bits by designing key material components. Heusler alloys are a remarkable class of more than 1500 intermetallic compounds whose magnetic properties can be readily tuned via both alloy composition and band structure engineering. In particular, Heusler properties are desirable for achieving high frequency fluctuations, because low magnetization, half-metallicity, nearly zero magneto-crystalline anisotropy, and exchange field-enhanced spin dynamics can all be realized in these materials. In addition, a number of Heusler materials exhibit excellent lattice matching to MgO used as a tunnel barrier in MTJs with high tunneling magneto resistance, as well as to highly efficient SOT materials. As an outcome of the proposed materials search and optimization, we expect to demonstrate p-bits with characteristic fluctuation frequencies up to tens of GHz controlled by SOT materials with improved efficiencies.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.