Ferromagnetic proximity effect in ferromagnetic-semiconductor hybrid structure (C02)

铁磁-半导体混合结构中的铁磁邻近效应（C02）

• 批准号: 269961471
• 金额: --
• 依托单位: Lehrstuhl für Experimentelle Physik II
• 依托单位国家: 德国
• 项目类别: CRC/Transregios
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/269961471?language=en
• 关键词: Ferromagnetic; proximity; effect; ferromagnetic; semiconductor

The target of studies will be the spin-spin s-d (p-d) exchange interaction between magnetic moments in a ferromagnetic layer and electrons (holes) in a CdTe/CdMgTe semiconductor quantum well, which leads to the ferromagnetic proximity effect in these hybrid structures. We will optimize the magnitude of the exchange interaction by choosing metallic (Fe, Co) or insulating (NiFe2O4, FeNiO3) ferromagnetic materials and varying the distance between the semiconductor quantum well and the ferromagnetic layer. We will further concentrate on realizing the electric control of the coupling strength of the proximity effect and will also work on demonstrating the spin orientation of holes by elliptically polarized phonons in non-magnetic GaAs semiconductor layers.

研究的目标将是铁磁层中的磁矩与CdTe/CdMgTe半导体量子阱中的电子（空穴）之间的自旋-自旋s-d （p-d）交换相互作用，从而导致这些混合结构中的铁磁邻近效应。我们将通过选择金属（Fe, Co）或绝缘（NiFe2O4, FeNiO3）铁磁材料以及改变半导体量子阱与铁磁层之间的距离来优化交换相互作用的大小。我们将进一步致力于实现对邻近效应耦合强度的电气控制，并将在非磁性砷化镓半导体层中利用椭圆极化声子来展示空穴的自旋方向。