Ferromagnetic proximity effect in ferromagnetic-semiconductor hybrid structure (C02)

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The target of studies will be the spin-spin s-d (p-d) exchange interaction between magnetic moments in a ferromagnetic layer and electrons (holes) in a CdTe/CdMgTe semiconductor quantum well, which leads to the ferromagnetic proximity effect in these hybrid structures. We will optimize the magnitude of the exchange interaction by choosing metallic (Fe, Co) or insulating (NiFe2O4, FeNiO3) ferromagnetic materials and varying the distance between the semiconductor quantum well and the ferromagnetic layer. We will further concentrate on realizing the electric control of the coupling strength of the proximity effect and will also work on demonstrating the spin orientation of holes by elliptically polarized phonons in non-magnetic GaAs semiconductor layers.