Theoretical Study of Neuromorphic Devices Based on Two-dimensional-based Magnetic Tunnel Junctions
基于二维磁隧道结的神经形态器件的理论研究
基本信息
- 批准号:22KJ2092
- 负责人:
- 金额:$ 1.41万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for JSPS Fellows
- 财政年份:2023
- 资助国家:日本
- 起止时间:2023-03-08 至 2024-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
To understand graphene (Gr) and hBN stability on Ni(111) substrate when a vacancy is created and their magnetic properties around the vacancy site, first-principles calculations were performed on several graphene and hBN vacancy systems as follows: 1.) Gr-vacancy/Ni; A spin-polarized localized state was observed when vacancy was created on the hollow site of Gr with a magnetic moment parallel to the neighboring C atoms, but opposite direction with Ni-slab. 2.) hBN-vacancy/Ni; A spin-polarized localized state was observed when vacancy was created on the B-site of hBN. The spin direction of a spin-polarized localized state was parallel to the N atoms surrounding the vacancy. Because of that, the spin direction of the localized state is parallel to Ni slabs creating a perfect spin filter. 3.) Gr-vacancy-hBN/Ni; Any vacancy on C atoms gives the vacancy a spin-polarized localized state with a spin direction opposite to Ni's substrate spin. Furthermore, the magnetic proximity effect from the Ni slab enables possible control of the spin direction of the localized state by controlling Ni magnetic alignment. However, when H atoms were considered at vacancy, creating V111, the H atoms preferred to buckle up, causing no spin-polarized localized state created at vacancy. From these results, a possible multi-level magnetic state can be expected by controlling the localized state spin direction of multi-stacking hBN and Gr vacancies.The importance of hybridization at the interface on affecting the proximity effect was also found when hBN/oxidized Ni surface and hBN/Ni3Au was considered.
为了理解当产生空位时Ni(111)衬底上的石墨烯(Gr)和hBN稳定性以及它们在空位位点周围的磁性,如下对几种石墨烯和hBN空位系统进行第一原理计算:Gr-空位/Ni;当空位产生在Gr的空位上时,观察到自旋极化局域态,其磁矩平行于相邻的C原子,但与Ni板相反。2.)的情况。hBN-空位/Ni:当空位产生在hBN的B位上时,观察到自旋极化局域态。自旋极化局域态的自旋方向平行于空位周围的N原子。正因为如此,局域态的自旋方向平行于Ni片,从而形成完美的自旋过滤器。3.)第三章Gr-空位-hBN/Ni; C原子上的任何空位都使空位处于自旋极化局域态,其自旋方向与Ni的衬底自旋相反。此外,来自Ni板的磁邻近效应使得能够通过控制Ni磁对准来控制局域态的自旋方向。然而,当H原子被认为是在空位处,产生V111时,H原子更倾向于弯曲,导致在空位处没有自旋极化局域态产生。结果表明,通过控制hBN和Gr空位的局域态自旋方向,可以得到一个可能的多能级磁态,同时还发现了hBN/氧化Ni表面和hBN/Ni 3Au界面杂化对邻近效应的重要影响.
项目成果
期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
The Importance of Interface in Controlling Mass Gapped Dirac Cone of Graphene Through Pseudospin via Magnetic Proximity Effect
界面在通过磁邻近效应赝自旋控制石墨烯质量间隙狄拉克锥中的重要性
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Yusuf Wicaksono;Halimah Harfah;Gagus K. Sunnardianto;Muhammad A. Majidi; Koichi Kusakabe
- 通讯作者:Koichi Kusakabe
Controlling the Gapped Dirac Cone of Graphene through Pseudospin to Achieve Colossal in-Plane Magnetoresistance
通过赝自旋控制石墨烯的有间隙狄拉克锥以实现巨大的面内磁阻
- DOI:
- 发表时间:2021
- 期刊:
- 影响因子:0
- 作者:Yusuf Wicaksono;Halimah Harfah;Gagus Ketut Sunnardianto;Muhammad Aziz Majidi;and Koichi Kusakabe
- 通讯作者:and Koichi Kusakabe
High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission
通过激发电子传输实现基于六方氮化硼-石墨烯异质结构的 MTJ 的高磁阻
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Halimah Harfah;Yusuf Wicaksono;Gagus K. Sunnardianto;Muhammad A. Majidi;Koichi Kusakabe
- 通讯作者:Koichi Kusakabe
Spin-mechatronics device based on controllable mass gapped Dirac cone of graphene in a Ni/hBN-graphene-hBN/Ni magnetic junction
Ni/hBN-石墨烯-hBN/Ni磁结中基于可控质量间隙石墨烯狄拉克锥的自旋机电一体化装置
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Yusuf Wicaksono;Halimah Harfah;Gagus K. Sunnardianto;Muhammad A. Majidi;Koichi Kusakabe
- 通讯作者:Koichi Kusakabe
Spin-Topological Electronic Valve in Ni/hBN-Graphene-hBN/Ni Magnetic Junction
- DOI:10.3390/magnetochemistry9050113
- 发表时间:2023-04-25
- 期刊:
- 影响因子:2.7
- 作者:Wicaksono,Yusuf;Harfah,Halimah;Kusakabe,Koichi
- 通讯作者:Kusakabe,Koichi
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Harfah Halimah其他文献
有機材料ならではの機能をもった次世代トランジスタの開発
开发具有有机材料特有功能的下一代晶体管
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
Harfah Halimah;Wicaksono Yusuf;Sunnardianto Gagus Ketut;Majidi Muhammad Aziz;Kusakabe Koichi;若山 裕 - 通讯作者:
若山 裕
Harfah Halimah的其他文献
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