Structure and Electronic Gap State Density at Organic Semiconductor Interfaces

有机半导体界面的结构和电子能隙态密度

基本信息

项目摘要

Although several theories have been proposed to determine the electronic level alignment at the interface of two organic semiconductors (OSC), for example the polaron state model or the induced density of states model, so far no satisfying and complete theory for predicting the level offsets has been developed. We will conduct a comprehensive study of the electronic level alignment of organic-organic (small molecule) heterostructures using complementary techniques to understand the relationship between structural defects and electronic structure. The innovative combination of high-resolution X-ray scattering and high sensitivity UPS allows the detailed description of structural defects and electronic states located in the gap region, which are believed to play an essential role in the level alignment. In particular, we will prepare a series of organic-organic heterostructures with suitable material combinations with different electronic (ionization energy, energy gap) and structural (molecular conformation, crystal structure) properties. By variation of the growth parameters (substrate, growth rate, temperature) we will tune the structural properties of the heterostructure, which will in return modify the electronic properties. As the final result we aim for the direct relationship between coherently scattering material volume, that is the essentially defect free volume, versus the HOMO-level offset between the two OSCs.
尽管已经提出了几种确定两种有机半导体(OSC)界面电子能级排列的理论,如极化子态模型或感生态密度模型,但至今还没有一个令人满意的完整的理论来预测能级偏移。我们将使用互补技术对有机-有机(小分子)异质结构的电子能级排列进行全面的研究,以了解结构缺陷与电子结构之间的关系。高分辨率X射线散射和高灵敏度UPS的创新组合允许详细描述位于GaP区域的结构缺陷和电子态,这被认为在能级对准中起着至关重要的作用。特别是,我们将制备一系列具有不同电子(电离能、能隙)和结构(分子构象、晶体结构)的合适材料组合的有机-有机异质结构。通过改变生长参数(衬底、生长速率、温度),我们可以调整异质结构的结构性质,这反过来又会改变电子性质。作为最终结果,我们的目标是相干散射的材料体积,即本质上无缺陷的体积,与两个OSC之间的同位能级偏移量之间的直接关系。

项目成果

期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
On the Origin of Gap States in Molecular Semiconductors—A Combined UPS, AFM, and X-ray Diffraction Study
  • DOI:
    10.1021/acs.jpcc.1c03096
  • 发表时间:
    2021-08
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jan Hagenlocher;Niels Scheffczyk;K. Broch;G. Duva;Nadine Rußegger;Lisa Egenberger;R. Banerjee;S. Kera;F. Schreiber;A. Hinderhofer
  • 通讯作者:
    Jan Hagenlocher;Niels Scheffczyk;K. Broch;G. Duva;Nadine Rußegger;Lisa Egenberger;R. Banerjee;S. Kera;F. Schreiber;A. Hinderhofer
Structure-Dependent Charge Transfer in Molecular Perylene-Based Donor/Acceptor Systems and Role of Side Chains
  • DOI:
    10.1021/acs.jpcc.0c00230
  • 发表时间:
    2020-05
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    V. Belova;A. Hinderhofer;Clemens Zeiser;Timo Storzer;Jakub Rozbořil;Jan Hagenlocher;J. Novák;A. Gerlach;R. Scholz;F. Schreiber
  • 通讯作者:
    V. Belova;A. Hinderhofer;Clemens Zeiser;Timo Storzer;Jakub Rozbořil;Jan Hagenlocher;J. Novák;A. Gerlach;R. Scholz;F. Schreiber
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

Dr. Alexander Hinderhofer其他文献

Dr. Alexander Hinderhofer的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

相似海外基金

Understanding the electronic structure landscape in wide band gap metal halide perovskites
了解宽带隙金属卤化物钙钛矿的电子结构景观
  • 批准号:
    EP/X039285/1
  • 财政年份:
    2024
  • 资助金额:
    --
  • 项目类别:
    Research Grant
Band gap and electronic structure of 2D-systems, spinelectronics and ultra-hard materials studied with synchrotron-based soft X-ray Spectroscopy and Density Functional Theory
使用基于同步加速器的软 X 射线光谱和密度泛函理论研究二维系统、自旋电子学和超硬材料的带隙和电子结构
  • 批准号:
    RGPIN-2015-05498
  • 财政年份:
    2019
  • 资助金额:
    --
  • 项目类别:
    Discovery Grants Program - Individual
Band gap and electronic structure of 2D-systems, spinelectronics and ultra-hard materials studied with synchrotron-based soft X-ray Spectroscopy and Density Functional Theory
使用基于同步加速器的软 X 射线光谱和密度泛函理论研究二维系统、自旋电子学和超硬材料的带隙和电子结构
  • 批准号:
    RGPIN-2015-05498
  • 财政年份:
    2018
  • 资助金额:
    --
  • 项目类别:
    Discovery Grants Program - Individual
Band gap and electronic structure of 2D-systems, spinelectronics and ultra-hard materials studied with synchrotron-based soft X-ray Spectroscopy and Density Functional Theory
使用基于同步加速器的软 X 射线光谱和密度泛函理论研究二维系统、自旋电子学和超硬材料的带隙和电子结构
  • 批准号:
    RGPIN-2015-05498
  • 财政年份:
    2017
  • 资助金额:
    --
  • 项目类别:
    Discovery Grants Program - Individual
Band gap and electronic structure of 2D-systems, spinelectronics and ultra-hard materials studied with synchrotron-based soft X-ray Spectroscopy and Density Functional Theory
使用基于同步加速器的软 X 射线光谱和密度泛函理论研究二维系统、自旋电子学和超硬材料的带隙和电子结构
  • 批准号:
    RGPIN-2015-05498
  • 财政年份:
    2016
  • 资助金额:
    --
  • 项目类别:
    Discovery Grants Program - Individual
Band gap and electronic structure of 2D-systems, spinelectronics and ultra-hard materials studied with synchrotron-based soft X-ray Spectroscopy and Density Functional Theory
使用基于同步加速器的软 X 射线光谱和密度泛函理论研究二维系统、自旋电子学和超硬材料的带隙和电子结构
  • 批准号:
    RGPIN-2015-05498
  • 财政年份:
    2015
  • 资助金额:
    --
  • 项目类别:
    Discovery Grants Program - Individual
Electronic Structure Methods for Small-Gap Systems
小间隙系统的电子结构方法
  • 批准号:
    1464828
  • 财政年份:
    2015
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Correlation between the precise crystal/electronic structure and properties of metal oxynitride photocatalysts: Can we predict the band gap from the structures?
金属氮氧化物光催化剂的精确晶体/电子结构与性能之间的相关性:我们可以从结构中预测带隙吗?
  • 批准号:
    25630365
  • 财政年份:
    2013
  • 资助金额:
    --
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Interface properties and electronic structure of new organic low band gap materials
新型有机低带隙材料的界面性质和电子结构
  • 批准号:
    202349782
  • 财政年份:
    2011
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Synchrotron Radiation Spectroscopic Study of Surface and Bulk Electronic Structure of Wide Band Gap Semiconductors
宽带隙半导体表面和体电子结构的同步辐射光谱研究
  • 批准号:
    0311792
  • 财政年份:
    2003
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了